Stress relief as the driving force for self-assembled Bi nanolines

Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their straightness and length -- they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we have found an energetically favourable structure for these nanolines that agrees with our scanning tunneling microscopy and photoemission experiments; the structure has an extremely unusual subsurface structure, comprising a double core of 7-membered rings of silicon. Our proposed structure explains all the observed features of the nanolines, and shows that surface stress resulting from the mismatch between the Bi and the Si substrate are responsible for their self-assembly. This has wider implications for the controlled growth of nanostructures on semiconductor surfaces.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Let

Nearly Massless Electrons in the Silicon Interface with a Metal Film

We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied for various other semiconductor devices.Comment: 4 pages, 4 figures, accepted for publication in Physical Review Letter

Dynamics of false vacuum bubbles in Brans-Dicke theory

We study the dynamics of false vacuum bubbles in the Brans-Dicke theory of gravity by using the thin shell or thin wall approximation. We consider a false vacuum bubble that has a different value for the Brans-Dicke field between the inside false vacuum region and the outside true vacuum region. Within a certain limit of field values, the difference of field values makes the effective tension of the shell negative. This allows new expanding false vacuum bubbles to be seen by the outside observer, which are disallowed in Einstein gravity.Comment: 29 pages, 20 figure

Direct observation of the spin polarization in Au atomic wires on Si(553)

The spin-resolved electronic band structure of Au-induced metallic atomic wires on a vicinal silicon surface, Si(553), was investigated using spin-and angle-resolved photoelectron spectroscopy. We directly measured the spin polarization of three partially filled one-dimensional metallic bands, a one-third-filled band, and the doublet of nearly half-filled bands. For the half-filled doublet, the strong apparent spin polarization was observed near the Fermi energy with a minor out-of-plane spin component. This observation is consistent with the Rashba-type spin-orbit splitting and with a recent experiment on a similar doublet of Si(557)-Au. In contrast, the one-third-filled band does not show a substantial spin polarization within the experimental accuracy, indicating a much smaller spin splitting, if any. These results are discussed for the origin of the partially filled bands and for the intriguing broken-symmetry ground state observed at low temperature.X11116sciescopu

Dynamical formation and evolution of (2+1)-dimensional charged black holes

In this paper, we investigate the dynamical formation and evolution of 2 + 1-dimensional charged black holes. We numerically study dynamical collapses of charged matter fields in an anti de Sitter background and note the formation of black holes using the double-null formalism. Moreover, we include re-normalized energy-momentum tensors assuming the S-wave approximation to determine thermodynamical back-reactions to the internal structures. If there is no semi-classical effects, the amount of charge determines the causal structures. If the charge is sufficiently small, the causal structure has a space-like singularity. However, as the charge increases, an inner Cauchy horizon appears. If we have sufficient charge, we see a space-like outer horizon and a time-like inner horizon, and if we give excessive charge, black hole horizons disappear. We have some circumstantial evidences that weak cosmic censorship is still satisfied, even for such excessive charge cases. Also, we confirm that there is mass inflation along the inner horizon, although the properties are quite different from those of four-dimensional cases. Semi-classical back-reactions will not affect the outer horizon, but they will affect the inner horizon. Near the center, there is a place where negative energy is concentrated. Thus, charged black holes in three dimensions have two types of curvature singularities in general: via mass inflation and via a concentration of negative energy. Finally, we classify possible causal structures.Comment: 40 pages, 15 figure

Experimental and computational investigations of the effect of the electrode gap on capacitively coupled radio frequency oxygen discharges

Geometrically symmetric capacitively coupled oxygen plasmas are studied experimentally by optical emission spectroscopy and probe measurements as well as via numerical simulations using the kinetic Particle-in-Cell/Monte Carlo collision (PIC/MCC) approach. The experiments reveal that at a fixed pressure of 20 mTorr and a driving frequency of 13.56 MHz, the central electron density increases with an increased electrode gap, while the time averaged optical emission of atomic oxygen lines decreases. These results are reproduced and understood by the PIC/MCC simulations performed under identical conditions. The simulations show that the electron density increases due to a mode transition from the Drift-Ambipolar-mode to the a-mode induced by increasing the electrode gap. This mode transition is due to a drastic change of the electronegativity and the mean electron energy, which leads to the observed reduction of the emission intensity of an atomic oxygen line. The observed mode transition is also found to cause a complex non-monotonic dependence of the O2+ ion flux to the electrodes as a function of the electrode gap. These fundamental results are correlated with measurements of the etch rate of amorphous carbon layers at different gap distances

Modeling the series of (n x 2) Si-rich reconstructions of beta-SiC(001): a prospective atomic wire?

We perform ab initio plane wave supercell density functional calculations on three candidate models of the (3 x 2) reconstruction of the beta-SiC(001) surface. We find that the two-adlayer asymmetric-dimer model (TAADM) is unambiguously favored for all reasonable values of Si chemical potential. We then use structures derived from the TAADM parent to model the silicon lines that are observed when the (3 x 2) reconstruction is annealed (the (n x 2) series of reconstructions), using a tight-binding method. We find that as we increase n, and so separate the lines, a structural transition occurs in which the top addimer of the line flattens. We also find that associated with the separation of the lines is a large decrease in the HOMO-LUMO gap, and that the HOMO state becomes quasi-one-dimensional. These properties are qualititatively and quantitatively different from the electronic properties of the original (3 x 2) reconstruction.Comment: 22 pages, including 6 EPS figure

Theoretical study of the (3x2) reconstruction of beta-SiC(001)

By means of ab initio molecular dynamics and band structure calculations, as well as using calculated STM images, we have singled out one structural model for the (3x2) reconstruction of the Si-terminated (001) surface of cubic SiC, amongst several proposed in the literature. This is an alternate dimer-row model, with an excess Si coverage of 1/3, yielding STM images in good accord with recent measurements [F.Semond et al. Phys. Rev. Lett. 77, 2013 (1996)].Comment: To be published in PRB Rapid. Com