1,140 research outputs found

    Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures

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    We report the design and development of a piezoelectric sample rotation system, and its integration into an Oxford Instruments Kelvinox 100 dilution refrigerator, for orientation-dependent studies of quantum transport in semiconductor nanodevices at millikelvin temperatures in magnetic fields up to 10T. Our apparatus allows for continuous in situ rotation of a device through >100deg in two possible configurations. The first enables rotation of the field within the plane of the device, and the second allows the field to be rotated from in-plane to perpendicular to the device plane. An integrated angle sensor coupled with a closed-loop feedback system allows the device orientation to be known to within +/-0.03deg whilst maintaining the sample temperature below 100mK.Comment: 8 pages, 5 figure

    Correlated enhancement of Hc2 and Jc in carbon nanotube-doped MgB2

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    The use of MgB2 in superconducting applications still awaits for the development of a MgB2-based material where both current-carrying performance and critical magnetic field are optimized simultaneously. We achieved this by doping MgB2 with double-wall carbon nanotubes (DWCNT) as a source of carbon in polycrystalline samples. The optimum nominal DWCNT content for increasing the critical current density, Jc is in the range 2.5-10%at depending on field and temperature. Record values of the upper critical field, Hc2(4K) = 41.9 T (with extrapolated Hc2(0) ~ 44.4 T) are reached in a bulk sample with 10%at DWCNT content. The measured Hc2 vs T in all samples are successfully described using a theoretical model for a two-gap superconductor in the dirty limit first proposed by Gurevich et al.Comment: 12 pages, 3 figure

    Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology

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    Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility (5×1055\times 10^{5} cm2^2/Vs) in a very shallow strained germanium channel, which is located only 22 nm below the surface. This high mobility leads to mean free paths 6μm\approx6 \mu m, setting new benchmarks for holes in shallow FET devices. Carriers are confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The top-gate of a dopant-less field effect transistor controls the carrier density in the channel. The high mobility, along with a percolation density of 1.2×1011 cm21.2\times 10^{11}\text{ cm}^{-2}, light effective mass (0.09 me_e), and high g-factor (up to 77) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies

    Art, Artifact, Archive: African American Experiences in the Nineteenth Century

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    Angelo Scarlato’s extraordinary and vast collection of art and artifacts related to the Civil War, and specifically to the Battle of Gettysburg, the United States Colored Troops, slavery and the African American struggle for emancipation, citizenship and freedom has proved to be an extraordinary resource for Gettysburg College students. The 2012-14 exhibition in Musselman Library’s Special Collections, curated by Lauren Roedner ’13, entitled Slaves, Soldiers, Citizens: African American Artifacts of the Civil War Era and its corresponding catalogue provided a powerful and comprehensive historical narrative of the period. This fall, students in my course at Gettysburg College “Art and Public Policy”—Diane Brennan, Maura Conley, Abigail Conner, Nicole Conte, Victoria Perez-Zetune, Savannah Rose, Kaylyn Sawyer, Caroline Wood and Zoe Yeoh—selected additional objects of material and print culture from Angelo’s private collection and drew from Lauren’s expertise for the exhibition Art, Artifact, Archive: African American Experiences in the Nineteenth Century to investigate public representations of a newly freed population as well as their more personal perspectives. [excerpt]https://cupola.gettysburg.edu/artcatalogs/1015/thumbnail.jp

    Enhancement of Transition Temperature in FexSe0.5Te0.5 Film via Iron Vacancies

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    The effects of iron deficiency in FexSe0.5Te0.5 thin films (0.8<x<1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (TC) up to 21K was observed in the most Fe deficient film (x=0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the FexSe0.5Te0.5 films. The enhancement of TC shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.Comment: 15 pages, 4 figure
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