One-loop calculation of mass dependent O(a){\cal O}(a) improvement coefficients for the relativistic heavy quarks on the lattice

We carry out the one-loop calculation of mass dependent ${\cal O}(a)$ improvement coefficients in the relativistic heavy quark action recently proposed, employing the ordinary perturbation theory with the fictitious gluon mass as an infrared regulator. We also determine renormalization factors and improvement coefficients for the axial-vector current at the one-loop level. It is shown that the improvement coefficients are infrared finite at the one-loop level if and only if the improvement coefficients in the action are properly tuned at the tree level.Comment: Lattice2003(improve), 3 page

Perturbative Determination of Mass Dependent O(a)O(a) Improvement Coefficients for the Vector and Axial Vector Currents with a Relativistic Heavy Quark Action

We carry out a perturbative determination of mass dependent renormalization factors and $O(a)$ improvement coefficients for the vector and axial vector currents with a relativistic heavy quark action, which we have designed to control $m_Qa$ errors by extending the on-shell $O(a)$ improvement program to the case of $m_Q \gg \Lambda_{\rm QCD}$ with $m_Q$ the heavy quark mass. We discuss what kind of improvement operators are required for the heavy-heavy and the heavy-light cases under the condition that the Euclidean rotational symmetry is not retained anymore because of the $m_Qa$ corrections. Our calculation is performed employing the ordinary perturbation theory with the fictitious gluon mass as an infrared regulator. We show that all the improvement coefficients are determined free from infrared divergences. Results of the renormalization factors and the improvement coefficients are presented as a function of $m_Q a$ for various improved gauge actions as well as the plaquette action.Comment: 39 pages, 12 figures as eps-fil

Cu-Oxide-Assisted Selective Pyrolysis of Organic Nanolayer on Patterned SiO₂–Cu Surface

Organic nanolayers attract much attention for the isolation and adhesion promotion of the Cu line and insulator in Cu interconnection of microelectronic devices. This paper proposes a strategy for selective formation of adhesion nanolayer on the insulator surface with etching it on Cu surface by Cu-oxide-assisted pyrolysis. After deposition of a uniform polyelectrolyte layer on both SiO₂ and Cu surfaces, heat treatment at 350 °C in ambient nitrogen was applied. Then, a larger thickness decrease was observed on the polyelectrolyte layer on Cu when compared to that on SiO₂. According to the TDS and XPS analysis, the polyelectrolyte layer was relatively stable on SiO₂ up to the intrinsic decomposition temperature of the material, but on the Cu surface it decomposed to volatile small molecules at a lower temperature due to Cu₂O-assisted oxidization. This substrate dependent selective pyrolysis was examined for 100 nm width Cu lines and SiO₂ spaces, and then a patterned polyelectrolyte layer on the SiO₂ surface was obtained with a single nanometer scale edge resolution