1,777 research outputs found
Cavity quantum electro-optics. II. Input-output relations between traveling optical and microwave fields
In the previous paper [M. Tsang, Phys. Rev. A 81, 063837 (2010), e-print
arXiv:1003.0116], I proposed a quantum model of a cavity electro-optic
modulator, which can coherently couple an optical cavity mode to a microwave
resonator mode and enable novel quantum operations on the two modes, including
laser cooling of the microwave mode, electro-optic entanglement, and
backaction-evading optical measurement of a microwave quadrature. In this
sequel, I focus on the quantum input-output relations between traveling optical
and microwave fields coupled to a cavity electro-optic modulator. With
red-sideband optical pumping, the relations are shown to resemble those of a
beam splitter for the traveling fields, so that in the ideal case of zero
parasitic loss and critical coupling, microwave photons can be coherently
up-converted to "flying" optical photons with unit efficiency, and vice versa.
With blue-sideband pumping, the modulator acts as a nondegenerate parametric
amplifier, which can generate two-mode squeezing and hybrid entangled photon
pairs at optical and microwave frequencies. These fundamental operations
provide a potential bridge between circuit quantum electrodynamics and quantum
optics.Comment: 12 pages, 10 figures, v2: updated and submitte
A Noise Investigation of Tunnel-Diode Microwave Amplifiers
An analysis and derivation of the noise figure of a tunnel-diode microwave amplifier are presented. The agreement between the measured noise figure and the theoretical results is an indirect check on the existence of full shot noise in germanium tunnel diodes at microwave frequencies. The limiting noise temperature of the amplifier is eI0R/2k, and can be approached by using diodes with small (RC) products in which the extreme overcoupling (load mismatch) and high gain can be achieved simultaneously
Nonlinear optical properties of photoresists for projection lithography
Optical beams are self-focused and self-trapped upon initiating crosslinking in photoresists. This nonlinear optical phenomenon is apparent only for low average optical intensities and produces index of refraction changes as large as 0.04. We propose using the self-focusing and self-trapping phenomenon in projection photolithography to enhance the resolution and depth of focus
AlGaAs inverted strip buried heterostructure lasers
Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold currents and quantum efficiencies that are comparable to those of conventional buried heterostructure lasers. The optical mode is confined by a weakly guiding strip loaded waveguide which makes possible operation in the fundamental transverse mode for larger stripe widths than is possible for conventional buried heterostructure lasers. Scattering of the laser light by irregularities in the sidewalls of the waveguide, which can be a serious problem in conventional buried heterostructure lasers, is also greatly reduced in these lasers
Passive Mode-Locking of Monolithic InGaAs/AlGaAs Double Quantum Well Lasers at 42GHz Repetition Rate
Pulse trains with a 42GHz repetition rate were generated by monolithic InGaAs/AlGaAs double quantum well lasers at a wavelength of 985 [angstroms]. The cavity was electrically divided into three regions, one providing gain and the other two providing saturable absorption. The optical modulation has a depth greater than 98% and full-width at half-maximum under 6ps, and bias conditions for sustained mode-locking are determined
Large optical cavity AlGaAs buried heterostructure window lasers
Large optical cavity buried heterostructure window lasers in which only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors have been fabricated. These lasers have threshold currents and differential quantum efficiencies comparable to those of regular large optical cavity buried heterostructure lasers in which the active region extends to the laser mirrors, however the window lasers have been operated under pulsed conditions at three times the power at which otherwise identical lasers without windows degrade by catastrophic mirror damage
Diffraction coupled phase-locked semiconductor laser array
A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (~3Ā°) and peak power levels of 1 W have been obtained for 100-Āµm-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed
Arrangement for damping the resonance in a laser diode
An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector
Narrow stripe AlGaAs lasers using double current confinement
Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have been fabricated. The double current confinement configuration, which is fabricated by a selective meltbackāgrowth technique, enables the current injection to be restricted to a very narrow section of the active layer. These lasers exhibit very strong antiguiding and operate in many longitudinal modes, which are characteristics of narrow stripe lasers. Potential applications of the twin vertical stripe configuration include arrays of optically coupled lasers and, if a real index waveguiding mechanism can be combined with double current confinement, low threshold lasers
Active coupled-resonator optical waveguides. I. Gain enhancement and noise
We use a tight-binding formalism in the time domain to analyze the effect of resonant gain enhancement and spontaneous emission noise in amplifying coupled-resonator optical waveguides (CROWs). We find the net amplification of a wave propagating in a CROW does not always vary with the group velocity, and depends strongly on the termination and excitation of these structures. The signal-to-noise ratio and noise figure of CROW amplifiers are derived in the tight-binding formalism as well. The physical interpretations and practical consequences of the theoretical results are discussed
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