A Nanoscale Bistable Resistor for an Oscillatory Neural Network

Coupled oscillators construct an oscillatory neural network (ONN) by mimicking the interactions among neurons in the human brain. This work demonstrates a fully CMOS-based oscillator consisting of a bistable resistor (biristor), which shares a structure identical with that of a metal-oxide-semiconductor field-effect transistor, except for the use of a gate electrode. The biristor-based oscillator (birillator) generates oscillating voltage signals in the form of spikes due to a single transistor latch phenomenon. When two birillators are connected with a coupling capacitor, they become synchronized with a phase difference of 180°. These coupled oscillation characteristics are experimentally investigated for an ONN. As practical applications of the ONN with coupled birillators, edge detection and vertex coloring are conducted by encoding information into phase differences between them. The proposed fully CMOS-based birillators are advantageous for low power consumption, high CMOS compatibility, and a compact footprint area

Hybrid Porphyrin–Silicon Nanowire Field-Effect Transistor by Opto-Electrical Excitation

A porphyrin–silicon nanowire (Si-NW) hybrid field-effect transistor is introduced. The hybrid device has separate electrical and optical gates surrounding the Si-NW channel. Porphyrin, a component of chlorophyll, is employed as an optical gate to modulate the potential of the Si-NW channel. Due to the independently formed hybrid gates, both optical and electrical excitation can effectively modulate the device. The exposed porphyrin optical gate responds to the optical excitation, and independently formed electrical gates respond to the electrical excitation. Charge transfer characteristics between a semiconductor channel and the porphyrin optical gate are deeply investigated. Optical, electrical, and opto-electrical excitation methods are employed to analyze the charging and discharging behaviors. Of these methods, opto-electrical excitation enables the strongest charge transfer because the inversion electron formation by an electrical pulse and the photoinduced charge transfer by an optical stimulus are affected simultaneously. Discharging processes, such as rapid discharging, exponential detrapping, and the formation of metastable states are also analyzed

Self-Aligned Nanoforest in Silicon Nanowire for Sensitive Conductance Modulation

A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used

Physical Observation of a Thermo-Morphic Transition in a Silicon Nanowire

A thermo-morphic transition of a silicon nanowire (Si-NW) is investigated in vacuum and air ambients, and notable differences are found under each ambient. In the vacuum ambient, permanent electrical breakdown occurs as a result of the Joule self-heating arising from the applied voltage across both ends of the Si-NW. The resulting current abruptly declines from a maximum value at the breakdown voltage (<i>V</i>_BD) to zero. In addition, the thermal conductivity of the Si-NW is extracted from the <i>V</i>_BD values under the vacuum ambient and shows good agreement with previously reported results. While the breakdown of the Si-NW does not exhibit negative differential resistance under the vacuum ambient, it interestingly shows negative differential resistance with multiple resistances in the current–voltage characteristics under the air ambient, similar to the behavior of carbon nanotubes. This behavior is triggered by current-induced oxidation, which leads to the thermo-morphic transition observed by TEM analyses. Additionally, the current-induced oxidation is favorably applied to reduce the size of a Si-NW at a localized and designated point

Porphyrin–Silicon Hybrid Field-Effect Transistor with Individually Addressable Top-gate Structure

A conductance-controllable hybrid device that utilizes the photoinduced charge transfer behavior of a porphyrin in a field-effect transistor (FET) with a nanogap is proposed and analyzed. A conventional metal-oxide-semiconductor (MOS) structure is modified to form a nanogap in which the porphyrin can be embedded. The conductance of an inversion channel is controlled by the negatively charged, optically activated porphyrin molecules. The proposed nanogap-formed MOSFET structure solves the conventional dilemma that a top-gate cannot be used for an organic–inorganic hybrid device because the top-gate blocks an entire area of a channel where organic material should be immobilized. The top-gate structure has much practicality compared with the back-gate structure because each device can be controlled individually. Furthermore, the device is highly compatible with the chip-based integrated system because the fabrication process follows the standard complementary metal-oxide-semiconductor (CMOS) technology. The charge transfer mechanisms between silicon and porphyrin are analyzed using devices with different doping polarities and geometrical parameters. The results show that the influence of the negative charge of the porphyrin in the device is reversed when opposite doping polarities are used. The device characteristics can be comprehensively evaluated using the energy band diagram analysis and simulation. The possible application of the proposed device for nonvolatile memory is demonstrated using the optical charging and electrical discharging behavior of the porphyrins

Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling-current-induced Joule heat in a p-i-n diode, consisting of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide-semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a substructure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors. A more than 2-fold increase in the on-state (<i>I</i>_ON) current was achieved using the ETA. Simulations are conducted to investigate the location of the hot spot and how its change in heat profile activates the dopants

Vertically Integrated Nanowire-Based Unified Memory

A vertically integrated nanowire-based device for multifunctional unified memory that combine dynamic random access memory (DRAM) and flash memory in a single transistor is demonstrated for the first time. The device utilizes a gate-all-around (GAA) structure that completely surrounds the nanowire; the structure is built on a bulk silicon wafer. A vertically integrated unified memory (VIUM) device composed of five-story channels was fabricated via the one-route all-dry etching process (ORADEP) with reliable reproducibility, stiction-free stability, and high uniformity. In each DRAM and flash memory operation, the five-story VIUM showed a remarkably enhanced sensing current drivability compared with one-story unified memory (UM) characteristics. In addition to each independent memory mode, the switching endurance of the VIUM was evaluated in the unified mode, which alternatively activates two memory modes, resulting in an even higher sensing memory window than that of the UM. In addition to our previous work on a logic transistor joining high performance with good scalability, this work describes a novel memory hierarchy design with high functionality for system-on-chip (SoC) architectures, demonstrating the practicality and versatility of the vertically integrated nanowire configuration for use in various applications

Design Strategy for a Piezoelectric Nanogenerator with a Well-Ordered Nanoshell Array

The piezoelectric nanogenerator (PNG) has been spotlighted as a promising candidate for use as a sustainable power source in wireless system applications. For the further development of PNGs, structural optimization is essential, but the structural analysis progress in this area has been scant. In the present study, we proposed a PNG with a well-ordered nanoshell array structure. The nanoshell structure has been considered as an effective core nanostructure for PNGs due to its effective stress confinement effect but has not been experimentally introduced thus far due to the challenging fabrication method required. To produce a controllable nanoshell structure, a top-down silicon nanofabrication technique which involves advanced spacer lithography is introduced. A comprehensive design strategy to enhance the piezoelectric performance is proposed in terms of the nanoshell diameter and shell-to-shell space. Both simulated and measured data confirm that an extremely high density of a structure is not always the best answer to maximize the performance. The highest amount of power can be achieved when the shell diameter and shell-to-shell space are within their proper ranges. The structural design strategy studied in this work provides a guideline for the further structural developments of PNG

Triboelectric Nanogenerator Based on the Internal Motion of Powder with a Package Structure Design

Harvesting the ambient mechanical energy that is abundant in the living environment is a green technology which can allow us to obtain an eco-friendly and sustainable form of energy. Here, we report a powder-based triboelectric nanogenerator (P-TENG) using polytetrafluoroethylene powder as a freestanding triboelectric layer. By employing powder, which has fluid-like characteristics, the device is able to harvest random vibrational energy from all directions and can be fabricated regardless of the size or shape of its container. Notably, this device shows excellent durability against mechanical friction and immunity against humidity. It is also capable of powering 240 green LEDs and charging a commercial energy-harvesting battery. The P-TENG is expected to be applicable as an energy harvester in self-powered systems for the upcoming Internet-of-Things era

Direct Observation of a Carbon Filament in Water-Resistant Organic Memory

The memory for the Internet of Things (IoT) requires versatile characteristics such as flexibility, wearability, and stability in outdoor environments. Resistive random access memory (RRAM) to harness a simple structure and organic material with good flexibility can be an attractive candidate for IoT memory. However, its solution-oriented process and unclear switching mechanism are critical problems. Here we demonstrate iCVD polymer-intercalated RRAM (i-RRAM). i-RRAM exhibits robust flexibility and versatile wearability on any substrate. Stable operation of i-RRAM, even in water, is demonstrated, which is the first experimental presentation of water-resistant organic memory without any waterproof protection package. Moreover, the direct observation of a carbon filament is also reported for the first time using transmission electron microscopy, which puts an end to the controversy surrounding the switching mechanism. Therefore, reproducibility is feasible through comprehensive modeling. Furthermore, a carbon filament is superior to a metal filament in terms of the design window and selection of the electrode material. These results suggest an alternative to solve the critical issues of organic RRAM and an optimized memory type suitable for the IoT era