24,189 research outputs found

    Multiparty quantum secret sharing with pure entangled states and decoy photons

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    We present a scheme for multiparty quantum secret sharing of a private key with pure entangled states and decoy photons. The boss, say Alice uses the decoy photons, which are randomly in one of the four nonorthogonal single-photon states, to prevent a potentially dishonest agent from eavesdropping freely. This scheme requires the parties of communication to have neither an ideal single-photon quantum source nor a maximally entangled one, which makes this scheme more convenient than others in a practical application. Moreover, it has the advantage of having high intrinsic efficiency for qubits and exchanging less classical information in principle.Comment: 5 pages, no figure

    Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study

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    Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based semiconductors is highly desired. With the combination of a swarm structure search method and density functional theory in this work, a quaternary compound SiBCN with graphene-like structure is found and displays a wide direct band gap as expected. The band gap is of ~2.63 eV which is just between ~2.20 and ~3.39 eV of the highlighted semiconductors SiC and GaN. Notably, the further calculation reveals that SiBCN possesses high carrier mobility with ~5.14x10^3 and ~13.07x10^3 cm^2V^-1s^-1 for electron and hole, respectively. Furthermore, the ab initio molecular dynamics simulations also show that the graphene-like structure of SiBCN can be well kept even at an extremely high temperature of 2000 K. The present work tells that designing ulticomponent silicides may be a practicable way to search for new silicon-based low-dimensional semiconductors which can match well with the previous Si-based substrates
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