1,415 research outputs found
Nuclear fission: The "onset of dissipation" from a microscopic point of view
Semi-analytical expressions are suggested for the temperature dependence of
those combinations of transport coefficients which govern the fission process.
This is based on experience with numerical calculations within the linear
response approach and the locally harmonic approximation. A reduced version of
the latter is seen to comply with Kramers' simplified picture of fission. It is
argued that for variable inertia his formula has to be generalized, as already
required by the need that for overdamped motion the inertia must not appear at
all. This situation may already occur above T=2 MeV, where the rate is
determined by the Smoluchowski equation. Consequently, comparison with
experimental results do not give information on the effective damping rate, as
often claimed, but on a special combination of local stiffnesses and the
friction coefficient calculated at the barrier.Comment: 31 pages, LaTex, 9 postscript figures; final, more concise version,
accepted for publication in PRC, with new arguments about the T-dependence of
the inertia; e-mail: [email protected]
Possible high superconductivity mediated by antiferromagnetic spin fluctuations in systems with Fermi surface pockets
We propose that if there are two small pocket-like Fermi surfaces, and the
spin susceptibility is pronounced around a wave vector {\bf Q} that bridges the
two pockets, the spin-singlet superconductivity mediated by spin fluctuations
may have a high transition temperature. Using the fluctuation exchange
approximation, this idea is confirmed for the Hubbard on a lattice with
alternating hopping integrals, for which is estimated to be almost an
order of magnitude larger than those for systems with a large connected Fermi
surface.Comment: 5 pages, uses RevTe
High Accuracy and Automatic Measurement of the Pattern Linewidth on Very Large Scale Integrated Circuits
High accuracy measurement of pattern linewidth is particularly important in Very Large Scale Integrated Circuits (VLSI) manufacturing.
The measurement of pattern linewidth has been done by optical methods. However, the optical methods have several problems: as the measured value depends on slope angle at pattern edge, thickness and optical property of film and also substrate, there exists a large difference in size (0.3 μm) between the defined edge and the true edge in case of photoresist linewidth measurements. Especially, the optical methods have severe problems to measure bottom of pattern edge and are unsuitable to measure pattern linewidth in VLSI\u27s manufacturing.
The secondary electron signal obtained by electron beam irradiation can be used to measure pattern linewidth with high accuracy. In order to avoid radiation damage and contamination during in-process measurement, low primary electron energy (1 keV) and low dosage of primary electrons (1X1020electrons/cm2) are used.
As secondary electron signal includes much random noise, signal averaging and smoothing methods for random noise reduction are utilized.
The automatic detection of bottom edge from secondary electron profile is achieved by detecting the increasing point of line profile which corresponds to the cross point of the average line and the slope line.
The linewidths obtained by this method agree with the linewidths calculated from the pattern pitch of cross section image obtained by scanning electron microscopy(SEM) within the error of 0.04μm
Low-temperature specific heat for ferromagnetic and antiferromagnetic orders in CaRu1-xMnxO3
Low-temperature specific heat of CaRu1-xMnxO3 was measured to clarify the
role of d electrons in ferromagnetic and antiferromagnetic orders observed
above x=0.2. Specific heat divided by temperature C_p/T is found to roughly
follow a T^2 function, and relatively large magnitudes of electronic specific
heat coefficient gamma were obtained in wide x range. In particular, gamma is
unchanged from the value at x=0 (84 mJ/K^2 mol) in the paramagnetic state for
x<=0.1, but linearly reduced with increasing x above x= 0.2. These features of
gamma strongly suggest that itinerant d electrons are tightly coupled with the
evolution of magnetic orders in small and intermediate Mn concentrations.Comment: 4 pages, 2 figures, to be published in J. Phys.: Conf. Ser. (SCES
2011, Cambridge, UK
Ground state of the three-band Hubbard model
The ground state of the two-dimensional three-band Hubbard model in oxide
superconductors is investigated by using the variational Monte Carlo method.
The Gutzwiller-projected BCS and spin- density wave (SDW) functions are
employed in the search for a possible ground state with respect to dependences
on electron density. Antiferromagnetic correlations are considerably enhanced
near half-filling. It is shown that the d-wave state may exist away from
half-filling for both the hole and electron doping cases. The overall structure
of the phase diagram obtained by the calculations qualitatively agrees with
experimental indications. The superconducting condensation energy is in
reasonable agreement with the experimental value obtained from specific heat
and critical magnetic field measurements for optimally doped samples. The
inhomogeneous SDW state is also examined near 1/8-hole doping.Comment: 10 pages, 17 figure
Localizations in coupled electronic chains
We studied effects of random potentials and roles of electron-electron
interactions in the gapless phase of coupled Hubbard chains, using a
renormalization group technique. For non-interacting electrons, we obtained the
localization length proportional to the number of chains, as already shown in
the other approaches. For interacting electrons, the localization length is
longer for stronger interactions, that is, the interactions counteract the
random potentials. Accordingly, the localization length is not a simple linear
function of the number of chains. This interaction effect is strongest when
there is only a single chain. We also calculate the effects of interactions and
random potentials on charge stiffness.Comment: no figure, to appear in Phys. Rev.
Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4
The low temperature phase (LTP) of alpha-(BEDT-TTF)_2KHg(SCN)_4 salt is known
for its surprising angular dependent magnetoresistance (ADMR), which has been
studied intensively in the last decade. However, the nature of the LTP has not
been understood until now. Here we analyse theoretically ADMR in unconventional
(or nodal) charge density wave (UCDW). In magnetic field the quasiparticle
spectrum in UCDW is quantized, which gives rise to spectacular ADMR. The
present model accounts for many striking features of ADMR data in
alpha-(BEDT-TTF)_2KHg(SCN)_4.Comment: 5 pages, 6 figure
Persistent current of two-chain Hubbard model with impurities
The interplay between impurities and interactions is studied in the gapless
phase of two-chain Hubbard model in order to see how the screening of impurity
potentials due to repulsive interactions in single-chain model will be changed
by increasing the number of channels. Renormalization group calculations show
that charge stiffness, and hence persistent current, of the two-chain model are
less enhanced by interactions than single chain case.Comment: 4 Pages, RevTeX, No figures, Submitted to PR
Spin-Density-Wave Phase Transitions in Quasi-One-Dimensional Dimerized Quarter-Filled Organic Conductors
We have studied spin density wave (SDW) phase transitions in dimerized
quarter-filled Hubbard chains weakly coupled via interchain one-particle
hopping, . It is shown that there exists a critical value of ,
, between the incoherent metal regime () and the
Fermi liquid regime () in the metallic phase above the SDW
transition temperature. By using the 2-loop perturbative renormalization-group
approach together with the random-phase-approximation, we propose a SDW phase
diagram covering both of the regimes. The SDW phase transition from the
incoherent metal phase for is caused by growth of the
intrachain electron-electron umklapp scattering toward low temperatures, which
is regarded as preformation of the Mott gap. We discuss relevance of the
present result to the SDW phase transitions in the quasi-one-dimensional
dimerized quarter-filled organic conductors, (TMTTF)X and (TMTSF)X.Comment: 19 pages, 13 eps figures, uses jpsj.sty, corrected typo in the text
and figures, no changes to the paper, to appear in J. Phys. Soc. Jpn. 68,
No.8 (1999
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