415 research outputs found
Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well
The parallel field of a full spin polarization of the electron gas in a
\Gamma8 conduction band of the HgTe quantum well was obtained from the
magnetoresistance by three different ways in a zero and quasi-classical range
of perpendicular field component Bper. In the quantum Hall range of Bper the
spin polarization manifests in anticrossings of magnetic levels, which were
found to strongly nonmonotonously depend on Bper.Comment: to be published in AIP Conf. Proc.: 15-th International Conference on
Narrow Gap Systems (NGS-15
Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime
We report an experimental study of quantum conductivity corrections for
two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum
wells in a wide temperature range (1.8-100) K. We perform a comparison of our
experimental data for the longitudinal conductivity at zero magnetic field to
the theory of interaction-induced corrections to th transport coefficients. In
the temperature range from 10 K up to (45-60) K, wich covers the ballistic
interaction regimes for our samples, a rather good agreement between the theory
and our experimental results has been found
Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe
We present the first experimental study of the double-quantum-well (DQW)
system made of 2D layers with inverted energy band spectrum: HgTe. The
magnetotransport reveals a considerably larger overlap of the conduction and
valence subbands than in known HgTe single quantum wells (QW), which may be
regulated by an applied gate voltage . This large overlap manifests itself
in a much higher critical field separating the range above it where the
quantum peculiarities shift linearly with and the range below with a
complicated behavior. In the latter case the -shaped and double--shaped
structures in the Hall magnetoresistance are observed with their
scale in field pronouncedly enlarged as compared to the pictures observed in an
analogous single QW. The coexisting electrons and holes were found in the whole
investigated range of positive and negative as revealed from fits to the
low-field -shaped and from the Fourier analysis of
oscillations in . A peculiar feature here is that the found
electron density remains almost constant in the whole range of investigated
while the hole density drops down from the value a factor of 6 larger
than at extreme negative to almost zero at extreme positive
passing through the charge neutrality point. We show that this difference
between and stems from an order of magnitude larger density of states
for holes in the lateral valence band maxima than for electrons in the
conduction band minimum. We interpret the observed reentrant sign-alternating
between electronic and hole conductivities and its zero
resistivity state in the quantum Hall range of fields on the basis of a
calculated picture of magnetic levels in a DQW.Comment: 15 pages, 13 figure
Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells
Longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances are experimentally investigated as a function of in-plane and transverse magnetic fields in n-InGaAs/GaAs nanostructures with strongly-coupled double quantum wells in the temperature range T = 1.8-70 K and magnetic fields B = 0-9.0 T. Experimental data on the temperature dependence of quantum lifetime in diffusive (kBT/τtr ≪ 1) and ballistic (kBT/τtr ≫ 1) regimes are reported. It has been found that in the ballistic regime in the temperature range where kBT/EF < 0.1, the observed quadratic temperature dependence of quantum lifetime is determined by inelastic electron-electron scattering. However, the temperature dependence of quantum lifetime cannot be quantitatively described by the existing theories in the whole temperature range. © 2013 American Institute of Physics
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