110 research outputs found

    Heterogeneous Catalysis on a Disordered Surface

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    We introduce a simple model of heterogeneous catalysis on a disordered surface which consists of two types of randomly distributed sites with different adsorption rates. Disorder can create a reactive steady state in situations where the same model on a homogeneous surface exhibits trivial kinetics with no steady state. A rich variety of kinetic behaviors occur for the adsorbate concentrations and catalytic reaction rate as a function of model parameters.Comment: 4 pages, gzipped PostScript fil

    III-nitride based heterostructures on silicon for optics and electronics applications

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    Stimulated emission and lasing in Cu(In,Ga)Se2 thin films

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    Stimulated emission and lasing in Cu(In,Ga)Se 2 thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N 2 laser with power densities in the range from 2 to 100 kW cm − 2 . Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm − 2 . A gain value of 94 cm − 1 has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I thr ~ 50 kW cm −

    Bi-defects of Nematic Surfactant Bilayers

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    We consider the effects of the coupling between the orientational order of the two monolayers in flat nematic bilayers. We show that the presence of a topological defect on one bilayer generates a nontrivial orientational texture on both monolayers. Therefore, one cannot consider isolated defects on one monolayer, but rather associated pairs of defects on either monolayer, which we call bi-defects. Bi-defects generally produce walls, such that the textures of the two monolayers are identical outside the walls, and different in their interior. We suggest some experimental conditions in which these structures could be observed.Comment: RevTeX, 4 pages, 3 figure

    Determinant Structure of the Rational Solutions for the Painlev\'e IV Equation

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    Rational solutions for the Painlev\'e IV equation are investigated by Hirota bilinear formalism. It is shown that the solutions in one hierarchy are expressed by 3-reduced Schur functions, and those in another two hierarchies by Casorati determinant of the Hermite polynomials, or by special case of the Schur polynomials.Comment: 19 pages, Latex, using theorem.st

    Исследование удельной электропроводности короткозамкнутой обмотки ротора асинхронных двигателей статистическим методом планирования эксперимента

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    Рассматривается влияние температуры и химсостава алюминия при заливке, длины пакетов и суммарного поперечного сечения пазов роторов на удельную электропроводность алюминия короткозамкнутой обмотки роторов асинхронных двигателей. В качестве метода исследования выбран экспериментально-статистический. Составлен центральный композиционный ротатабельный униформплан второго порядка. Для реализации плана изготовлено 116 экспериментальных роторов на базе двигателей серий АО и АО2. Удельная электропроводность измерялась прибором типа ИЭ-1 на вентиляционных крыльях, короткозамыкающих кольцах и на извлеченных из роторов стержнях обмотки. Всего произведено 4292 замера. В результате статистической обработки экспериментальных данных получены уравнения регрессии в виде полиномов второго порядка отдельно для короткозамыкающих колец и стержней обмотки. Проведена проверка уравнений на адекватность по F-критерию Фишера и коэффициентов уравнений на значимость по критерию Стъюдента. Уравнения регрессии позволяют учесть технологические и конструктивно-технологические факторы при проектировании асинхронных двигателей, аналогичных исследованным, и повысить точность расчета их характеристик

    Computer Modeling the Excitonic Reflection and Photoluminescence Spectra of GaN Epitaxial Layers

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    Photoluminescence (PL) and reflection excitonic spectra o f GaN single layer grown on sapphire substrate by MOVPE were modeled with aim to estimate a basie parameters o f free A- and B- excitons. The calculations were performed in the frame o f two-oscillator model for dielectric function e(E). Three layered model o f crystal was used for fitting o f reflection spectrum which was measured at T=80K. In this way the dead layer thickness d=6 nm, resonance energies Eа=3.4916 eV and Eв = 3.5008 eV as well as the broadening parameters Га = 5.27 meV and Гв = 7.14 meV of the free excitons were obtained. These parameters were used then for fitting of PL spectra in assumption o f the thermal equilibrium for excitons taking into account the self-absorption of resonance emission. The values of diffusion coefficients Dа =0.3 cm²/s, Dв = 0.1 cm²/s and exciton lifetimes Ƭa = 37 ps, Ƭв = 17 ps were estimated

    Quantum Computer with Mixed States and Four-Valued Logic

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    In this paper we discuss a model of quantum computer in which a state is an operator of density matrix and gates are general quantum operations, not necessarily unitary. A mixed state (operator of density matrix) of n two-level quantum systems is considered as an element of 4^n-dimensional operator Hilbert space (Liouville space). It allows to use a quantum computer model with four-valued logic. The gates of this model are general superoperators which act on n-ququat state. Ququat is a quantum state in a four-dimensional (operator) Hilbert space. Unitary two-valued logic gates and quantum operations for an n-qubit open system are considered as four-valued logic gates acting on n-ququat. We discuss properties of quantum four-valued logic gates. In the paper we study universality for quantum four-valued logic gates.Comment: 17 page

    Optical and laser properties of the ZnSe/ZnMgSSe multiple quantum well heterostructures

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    The Hamiltonian Structure of the Second Painleve Hierarchy

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    In this paper we study the Hamiltonian structure of the second Painleve hierarchy, an infinite sequence of nonlinear ordinary differential equations containing PII as its simplest equation. The n-th element of the hierarchy is a non linear ODE of order 2n in the independent variable zz depending on n parameters denoted by t1,...,tn1{t}_1,...,{t}_{n-1} and αn\alpha_n. We introduce new canonical coordinates and obtain Hamiltonians for the zz and t1,...,tn1t_1,...,t_{n-1} evolutions. We give explicit formulae for these Hamiltonians showing that they are polynomials in our canonical coordinates
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