Jansen, R. H.

Kalisch, H.

Lutsenko, Е. V.

Schineller, B.

Yablonskii, G. P.

English

Электронная библиотека БГУ

III-NITRIDE BASED HETEROSTRUCTURES ON SILICON FOR OPTICS 
AND ELECTORINCS APLICATIONS 
(приглашенный доклад) 
G. P. Yablonskii1, Е. V. Lutsenko1, H. Kalisch2, R. H. Jansen2, B. Schineller3, 
M. Heuken2,3 
1 Institute of Physics of NAS Belarus, Minsk, Belarus; 
2 Institut für Theoretische Elektrotechnik, RWTH Aachen, Germany; 
3 AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany. 
Modern level of electronics requires larger carrying capacity of the com-
munication optoelectronic channels between separate elements of the silicon 
chips, interaction and self-organization of the silicon chips by means of ultra-
high frequency channels, integration of various sensor devices into the silicon 
chips. In this work, optical, laser and electrical properties of InGaN/GaN mul-
tiple quantum well (MQW) and electroluminescent test (ELT) heterostructures 
as well as AlGaN/GaN heterostructures with 2D electron gas for high electron 
mobility transistors (HEMT) grown on silicon substrate are considered. Prin-
cipal possibility of integration into silicon electronics of such elements as 
GaN-based LEDs, LDs and HEMTs is shown.  
High-quality InGaN/GaN MQWs and InGaN/GaN MQW electrolumines-
cent test (ELT) heterostructures on silicon substrates were fabricated and in-
vestigated. In InGaN/GaN MQW laser action was obtained up to 360°C with 
threshold ~25 kW/cm2 at room temperature. Maximal wavelength of MQW 
lasers was 480 nm. It was shown that it is possible to create InGaN/GaN 
MQW laser on Si emitting in the green spectral region that is important for op-
toelectronic communications and sensors on plastic waveguides. Green CdSe 
quantum dot lasers pumped by emission of both InGaN/GaN MQW laser 
grown on Si and commercial InGaN LD were created. InGaN/GaN ELT het-
erostructures with cutoff voltage of about 3 V were fabricated. The active re-
gion of these ELTs has excellent quality that is demonstrated by the low laser 
threshold Ithr = 77 kW/cm2 (λ=432.5 nm) at optical excitation into GaN:Mg 
layer. In such a way principal possibility of fabrication of InGaN/GaN laser 
diodes grown on Si was demonstrated. 
AlGaN/GaN HEMT heterostructures with piezoelectric fields ~500 kV/cm 
(from photoreflection) and positive gain up to 18.9 GHz were created with 2D 
electron gas sheet density Ns = 1.5⋅1013 cm-2, charge carrier mobility μ = 1500 
cm2/Vs, transconductance Gext=268 mSm/mm (gate length is 0.5 μm), and 
maximal drain current 600 mA/mm (gate length is 1 μm).  
Thus the basic opportunity of creation of the microwave and optoelectronic 
devices compatible with silicon electronics is shown. 
63


III-nitride based heterostructures on silicon for optics and electronics applications

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III-nitride based heterostructures on silicon for optics and electronics applications

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