Spectrally Selective Emitters with Deep Rectangular Cavities Fabricated with Fast Atom Beam Etching

科研費報告書収録論文(課題番号:11555057・基盤研究(B)(2)・H11～H13/研究代表者:湯上, 浩雄/太陽熱光起電力による高温輻射-電力直接変換システムの開発

Solar thermophotovoltaic using Al2O3/Er3 Al5O12 eutectic composite selective emitter

科研費報告書収録論文(課題番号:11555057・基盤研究(B)(2)・H11～H13/研究代表者:湯上, 浩雄/太陽熱光起電力による高温輻射-電力直接変換システムの開発

Surface microstructured selective emitters for TPV systems

科研費報告書収録論文(課題番号:11555057・基盤研究(B)(2)・H11～H13/研究代表者:湯上, 浩雄/太陽熱光起電力による高温輻射-電力直接変換システムの開発

A Broadband antireflection for GaSb by means of subwavelength grating (SWG) structures

科研費報告書収録論文(課題番号:11555057・基盤研究(B)(2)・H11～H13/研究代表者:湯上, 浩雄/太陽熱光起電力による高温輻射-電力直接変換システムの開発

Investigation of cathodic reaction in SOFCs and PCFCs by using patterned thin film model electrodes

In recent years, fuel cells operating at relatively high temperatures, such as solid oxide fuel cells (SOFCs) using an oxide ion conducting electrolyte and proton ceramics fuel cells (PCFCs) using an proton conducting electrolyte, attract attentions as high-efficient energy-conversion devices. For further enhancements of the performance and the durability of SCFCs and PCFCs, it is essential to understand the electrode reactions. In particular, the knowledge on the dominant reaction path in the electrodes would help us to optimize the material and the microstructure of the electrode. Please click Additional Files below to see the full abstract

Crystallization process of perovskite type oxide thin films deposited by PLD without substrate heating: Influence of sputtering rate and densification-driven high tensile strain

Crystallization process in non-heating pulsed laser deposition (PLD) and the following post-annealing route for perovskite oxide thin film fabrication has been studied. Remarkable influence of sputtering rate on crystallization temperatures is demonstrated for BaZrO3 and SrZrO3 thin films in this process. Crystalline nuclei formation occurs randomly in the thin films deposited at a high sputtering rate which leads to the faster crystallization at a lower temperature, while it occurs predominantly at the substrate or interlayer interface at a higher temperature when the sputtering rate is very low, which is also reinforced by the atomic oxygen irradiation upon deposition. It should be noted that crystalline thin film synthesis of BaZrO3 is possible at a post-annealing temperature below200 °Cwhen the sputtering rate is relatively high. On the other hand, obtained thin films showhigh tensile strainwhich is not related to the difference in thermal expansion coefficient between substrate and thin film, but is found to be due to the densification upon crystallization. The tensile strain is relaxed when the thin films are annealed at 750 °C or above, while the strain is very stable at a temperature as low as 600 °C for 1 week

Enhancement of Proton Transport in an Oriented Polypeptide Thin Film

Proton transport properties of a partially protonated poly(aspartic acid)/sodium polyaspartate (P-Asp) were investigated. A remarkable enhancement of proton conductivity has been achieved in the thin film. Proton conductivity of 60-nm-thick thin film prepared on MgO(100) substrate was 3.4 × 10−3 S cm−1 at 298 K. The electrical conductivity of the oriented thin film was 1 order of magnitude higher than the bulk specimen, and the activation energies for the proton conductivity were 0.34 eV for the oriented thin film and 0.65 eV for the pelletized sample, respectively. This enhancement of the proton transport is attributable to the highly oriented structure on MgO(100) substrate. This result proposes great potential for a new strategy to produce a highly proton-conductive material using the concept of an oriented thin film structure without strong acid groups