13 research outputs found
Properties of GaAs/InGaAs Quantum-Size Structures Containing delta < Mn >-Doped Layers
No full textProperties of structures containing an InGaAs quantum well (QW) or InAs quantum dots (QDs) as well as delta - and delta -doped layers are investigated. Most of these structures are fabricated by the MOCVD epitaxy method; delta -doped layers are obtained by low-temperature laser deposition directly in the epitaxial reactor. The structures under study exhibit three conduction channels: the delta -doped layer, delta -doped layer, and QW or wetting layer in the case of QDs. The contribution of each channel into the total conduction depend on the measurement temperature. Photoluminescence of the structures as a function of thickness of delta -doped layer is studied.116466CRDF [RUX0-001-NN-06/BP1M01]Russian Foundation for Basic Research [05-02-16624]CRDF [RUX0-001-NN-06/BP1M01]Russian Foundation for Basic Research [05-02-16624
Research of the current type effect and its modulation algorithm on the performance of welded joints
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New Asian Case Method for tribology: a structured approach for increased problem solving competence in tribology teaching and research
No full textTheoretical Research of Kinematic Pair “Shaft-Sleeve” of Friction Bearing of Gas-Compressor Unit at Variable Speeds of Shaft Rotation
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Pair Breaking, Pseudogap, and Superconducting Tc of Hole-Doped Cuprates: Interrelations and Implications
No full textAbout reducing integro-differential equations with infinite limits of integration to systems of ordinary differential equations
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