Time-Interleaved Analog-to-Digital Converter (TIADC) Compensation Using Multichannel Filters

Published methods that employ a filter bank for compensating the timing and bandwidth mismatches of an M-channel time-interleaved analog-to-digital converter (TIADC) were developed based on the fact that each sub-ADC channel is a downsampled version of the analog input. The output of each sub-ADC is filtered in such a way that, when all the filter outputs are summed, the aliasing components are minimized. If each channel of the filter bank has N coefficients, the optimization of the coefficients requires computing the inverse of an MN times MN matrix if the weighted least squares (WLS) technique is used as the optimization tool. In this paper, we present a multichannel filtering approach for TIADC mismatch compensation. We apply the generalized sampling theorem to directly estimate the ideal output of each sub-ADC using the outputs of all the sub-ADCs. If the WLS technique is used as the optimization tool, the dimension of the matrix to be inversed is N times N. For the same number of coefficients (and also the same spurious component performance given sufficient arithmetic precision), our technique is computationally less complex and more robust than the filter-bank approach. If mixed integer linear programming is used as the optimization tool to produce filters with coefficient values that are integer powers of two, our technique produces a saving in computing resources by a factor of approximately (100.2N(M- 1)/(M-1) in the TIADC filter design.published_or_final_versio

Determination of selected antibiotics in the Victoria Harbour and the Pearl River, South China using high-performance liquid chromatography-electrospray ionization tandem mass spectrometry

2006-2007 > Academic research: refereed > Publication in refereed journalAccepted ManuscriptPublishe

Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy

We report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylikc detects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.published_or_final_versio

Single-Nucleotide Polymorphisms Associated with Skin Naphthyl–Keratin Adduct Levels in Workers Exposed to Naphthalene

Background: Individual genetic variation that results in differences in systemic response to xenobiotic exposure is not accounted for as a predictor of outcome in current exposure assessment models

Study of microvoids in high-rate a-Si:H using positron annihilation

Theme: Amorphous and microcrystalline silicon technologyIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.published_or_final_versio

Interface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy

Symposium Theme: Amorphous and microcrystalline silicon technologyBy means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.published_or_final_versio

Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas

Symposium Theme: Amorphous and microcrystalline silicon technologyWe show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.published_or_final_versio

Searching Ultra-compact Pulsar Binaries with Abnormal Timing Behavior

published_or_final_versio

Noninjection Synthesis of CdS and Alloyed CdSxSe1−xNanocrystals Without Nucleation Initiators

CdS and alloyed CdSxSe1−x nanocrystals were prepared by a simple noninjection method without nucleation initiators. Oleic acid (OA) was used to stabilize the growth of the CdS nanocrystals. The size of the CdS nanocrystals can be tuned by changing the OA/Cd molar ratios. On the basis of the successful synthesis of CdS nanocrystals, alloyed CdSxSe1−x nanocrystals can also be prepared by simply replacing certain amount of S precursor with equal amount of Se precursor, verified by TEM, XRD, EDX as well as UV–Vis absorption analysis. The optical properties of the alloyed CdSxSe1−x nanocrystals can be tuned by adjusting the S/Se feed molar ratios. This synthetic approach developed is highly reproducible and can be readily scaled up for potential industrial production