2,918 research outputs found

    Histone acetyltransferases CBP/p300 in tumorigenesis and CBP/p300 inhibitors as promising novel anticancer agents

    Get PDF
    The histone acetyltransferases CBP and p300, often referred to as CBP/p300 due to their sequence homology and functional overlap and co-operation, are emerging as critical drivers of oncogenesis in the past several years. CBP/p300 induces histone H3 lysine 27 acetylation (H3K27ac) at target gene promoters, enhancers and super-enhancers, thereby activating gene transcription. While earlier studies indicate that CBP/p300 deletion/loss can promote tumorigenesis, CBP/p300 have more recently been shown to be over-expressed in cancer cells and drug-resistant cancer cells, activate oncogene transcription and induce cancer cell proliferation, survival, tumorigenesis, metastasis, immune evasion and drug-resistance. Small molecule CBP/p300 histone acetyltransferase inhibitors, bromodomain inhibitors, CBP/p300 and BET bromodomain dual inhibitors and p300 protein degraders have recently been discovered. The CBP/p300 inhibitors and degraders reduce H3K27ac, down-regulate oncogene transcription, induce cancer cell growth inhibition and cell death, activate immune response, overcome drug resistance and suppress tumor progression in vivo. In addition, CBP/p300 inhibitors enhance the anticancer efficacy of chemotherapy, radiotherapy and epigenetic anticancer agents, including BET bromodomain inhibitors; and the combination therapies exert substantial anticancer effects in mouse models of human cancers including drug-resistant cancers. Currently, two CBP/p300 inhibitors are under clinical evaluation in patients with advanced and drug-resistant solid tumors or hematological malignancies. In summary, CBP/p300 have recently been identified as critical tumorigenic drivers, and CBP/p300 inhibitors and protein degraders are emerging as promising novel anticancer agents for clinical translation

    Effects of annealing on the electrical properties of Fe-doped InP

    Get PDF
    The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.published_or_final_versio

    Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts

    Get PDF
    P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.published_or_final_versio

    Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2

    Get PDF
    The deep level defects in 6H-SiC induced by low energy electron irradiation was investigated. Electron energies of 0.2, 0.3, 0.5 and 1.7 MeV were used to produce the deep level defects in the n-type 6H-SiC materials. The deep level transient spectroscopy (DLTS) technique, combined with isochronal thermal annealing experiments, was used for the study of the defects. It was observed that deep levels ED1, E1/E2 and Ei were created with irradiation energies of 0.3 MeV or greater than that. The deep levels were found to be associated with primary atom displacement on the C atom of SiC sublattice and had microstructure containing the carbon vacancy.published_or_final_versio

    Deformation of the Fermi surface in the extended Hubbard model

    Full text link
    The deformation of the Fermi surface induced by Coulomb interactions is investigated in the t-t'-Hubbard model. The interplay of the local U and extended V interactions is analyzed. It is found that exchange interactions V enhance small anisotropies producing deformations of the Fermi surface which break the point group symmetry of the square lattice at the Van Hove filling. This Pomeranchuck instability competes with ferromagnetism and is suppressed at a critical value of U(V). The interaction V renormalizes the t' parameter to smaller values what favours nesting. It also induces changes on the topology of the Fermi surface which can go from hole to electron-like what may explain recent ARPES experiments.Comment: 5 pages, 4 ps figure

    Surface-modified biochar in a bioretention system for Escherichia coli removal from stormwater

    Get PDF
    Bioretention systems have been recommended as one of the best management practices for low impact development for water recycling/reuse systems. Although improvement of the stormwater quality has been reported regarding pollutants eliminations such as suspended solids and heavy metals, a substantial removal of indicator bacteria is required for possible non-potable reuse. This study investigated the efficiency of wood biochar with H2SO4-, H3PO4-, KOH-, and amino-modifications for E. coli removal from synthetic stormwater under intermittent flow. The H2SO4-modified biochar showed a specific surface area of 234.7 m(2) g(-1) (approximately double the area of original biochar), whereas a substantial reduction in surface area was found with amino-modified biochar. The E. coli removal (initial concentration of 0.3-3.2 × 10(6) CFU mL(-1)) by modified biochars as filter media was very promising with, for example, over 98% removal efficiency in the first 20 pore volumes of stormwater infiltration and over 92% removal by the end of the second infiltration cycle. Only a small portion of E. coli attached on the modified biochars (<0.3%, except KOH- and amino-modified biochars) was remobilized during the drainage phase of intermittent flow. The high removal capacity and stability against drainage were attributed to the high surface area, porous structure, and surface characteristics (e.g. hydrophobicity and O-containing functional groups) of the biochars. Thus, the H2SO4-modified biochar appeared to give the best treatment performance

    Compensation defects in annealed undoped liquid encapsulated Czochralski InP

    Get PDF
    As-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.published_or_final_versio
    corecore