B -> J/psi K^* Decays in QCD Factorization

The hadronic decay B -> J K^* is analyzed within the framework of QCD factorization. The spin amplitudes A_0, A_\parallel and A_\perp in the transversity basis and their relative phases are studied using various different form-factor models for B-K^* transition. The effective parameters a_2^h for helicity h=0,+,- states receive different nonfactorizable contributions and hence they are helicity dependent, contrary to naive factorization where a_2^h are universal and polarization independent. QCD factorization breaks down even at the twist-2 level for transverse hard spectator interactions. Although a nontrivial strong phase for the A_\parallel amplitude can be achieved by adjusting the phase of an infrared divergent contribution, the present QCD factorization calculation cannot say anything definite about the phase phi_\parallel. Unlike B -> J/psi K decays, the longitudinal parameter a_2^0 for B -> J/psi K^* does not receive twist-3 corrections and is not large enough to account for the observed branching ratio and the fraction of longitudinal polarization. Possible enhancement mechanisms for a_2^0 are discussed.Comment: 21 pages, 1 figure, a table and a reference added, some typos correcte

Strain- and region-specific gene expression profiles in mouse brain in response to chronic nicotine treatment

A pathway-focused complementary DNA microarray and gene ontology analysis were used to investigate gene expression profiles in the amygdala, hippocampus, nucleus accumbens, prefrontal cortex (PFC) and ventral tegmental area of C3H/HeJ and C57BL/6J mice receiving nicotine in drinking water (100 μg/ml in 2% saccharin for 2 weeks). A balanced experimental design and rigorous statistical analysis have led to the identification of 3.5-22.1% and 4.1-14.3% of the 638 sequence-verified genes as significantly modulated in the aforementioned brain regions of the C3H/HeJ and C57BL/6J strains, respectively. Comparisons of differential expression among brain tissues showed that only a small number of genes were altered in multiple brain regions, suggesting presence of a brain region-specific transcriptional response to nicotine. Subsequent principal component analysis and Expression Analysis Systematic Explorer analysis showed significant enrichment of biological processes both in C3H/HeJ and C57BL/6J mice, i.e. cell cycle/proliferation, organogenesis and transmission of nerve impulse. Finally, we verified the observed changes in expression using real-time reverse transcriptase polymerase chain reaction for six representative genes in the PFC region, providing an independent replication of our microarray results. Together, this report represents the first comprehensive gene expression profiling investigation of the changes caused by nicotine in brain tissues of the two mouse strains known to exhibit differential behavioral and physiological responses to nicotine. © 2007 Blackwell Publishing Ltd

Metallicity and its low temperature behavior in dilute 2D carrier systems

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and figures including a detailed comparison to a recent experimen

Ruthenocuprates RuSr2(Eu,Ce)2Cu2O10: Intrinsic magnetic multilayers

We report ac susceptibility data on RuSr_2(Eu,Ce)_2Cu_2O_(10-y) (Ru-1222, Ce content x=0.5 and 1.0), RuSr_2GdCu_2O_8 (Ru-1212) and SrRuO_3. Both Ru-1222 (x=0.5, 1.0) sample types exhibit unexpected magnetic dynamics in low magnetic fields: logarithmic time relaxation, switching behavior, and `inverted' hysteresis loops. Neither Ru-1212 nor SrRuO_3 exhibit such magnetic dynamics. The results are interpreted as evidence of the complex magnetic order in Ru-1222. We propose a specific multilayer model to explain the data, and note that superconductivity in the ruthenocuprate is compatible with both the presence and absence of the magnetic dynamics.Comment: 9 pages, 11 figures, Revtex; submitted to Phys.Rev.

Interaction Corrections to Two-Dimensional Hole Transport in Large rsr_{s} Limit

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^{\sigma}$ determined from the experiment, however, decreases with increasing $r_{s}$ for r_{s}\agt22, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.Comment: 6 pages, 4 figure

Exact eigenstate analysis of finite-frequency conductivity in graphene

We employ the exact eigenstate basis formalism to study electrical conductivity in graphene, in the presence of short-range diagonal disorder and inter-valley scattering. We find that for disorder strength, $W \ge$ 5, the density of states is flat. We, then, make connection, using the MRG approach, with the work of Abrahams \textit{et al.} and find a very good agreement for disorder strength, $W$ = 5. For low disorder strength, $W$ = 2, we plot the energy-resolved current matrix elements squared for different locations of the Fermi energy from the band centre. We find that the states close to the band centre are more extended and falls of nearly as $1/E_l^{2}$ as we move away from the band centre. Further studies of current matrix elements versus disorder strength suggests a cross-over from weakly localized to a very weakly localized system. We calculate conductivity using Kubo Greenwood formula and show that, for low disorder strength, conductivity is in a good qualitative agreement with the experiments, even for the on-site disorder. The intensity plots of the eigenstates also reveal clear signatures of puddle formation for very small carrier concentration. We also make comparison with square lattice and find that graphene is more easily localized when subject to disorder.Comment: 11 pages,15 figure

Transformation of β-Ni(OH)2to NiO nano-sheets via surface nanocrystalline zirconia coating: Shape and size retention

Shape and size of the synthesized NiO nano-sheets were retained during transformation of sheet-like β-Ni(OH)2to NiO at elevated temperatures via nano-sized zirconia coating on the surface of β-Ni(OH)2. The average grain size was 6.42 nm after 600 °C treatment and slightly increased to 10 nm after 1000 °C treatment, showing effective sintering retardation between NiO nano-sheets. The excellent thermal stability revealed potential application at elevated temperatures, especially for high temperature catalysts and solid-state electrochemical devices

Wave functions and decay constants of BB and DD mesons in the relativistic potential model

With the decay constants of $D$ and $D_s$ mesons measured in experiment recently, we revisit the study of the bound states of quark and antiquark in $B$ and $D$ mesons in the relativistic potential model. The relativistic bound state wave equation is solved numerically. The masses, decay constants and wave functions of $B$ and $D$ mesons are obtained. Both the masses and decay constants obtained here can be consistent with the experimental data. The wave functions can be used in the study of $B$ and $D$ meson decays.Comment: more discussion added, to appear in EPJ

The transition form factors for semi-leptonic weak decays of J/ψJ/\psi in QCD sum rules

Within the Standard Model, we investigate the semi-leptonic weak decays of $J/\psi$. The various form factors of $J/\psi$ transiting to a single charmed meson ($D^{(*)}_{(d,s)}$) are studied in the framework of the QCD sum rules. These form factors fully determine the rates of the weak semi-leptonic decays of $J/\psi$ and provide valuable information about the non-perturbative QCD effects. Our results indicate that the decay rate of the semi-leptonic weak decay mode $J/\psi \to D^{(*)-}_{s}+e^{+}+\nu_{e}$ is at order of $10^{-10}$.Comment: 28 pages, 6 figures, revised version to be published in Eur.Phys.J.