37,103 research outputs found
Recommended from our members
A low-bandgap dimeric porphyrin molecule for 10% efficiency solar cells with small photon energy loss
Dimeric porphyrin molecules have great potential as donor materials for high performance bulk heterojunction organic solar cells (OSCs). Recently reported dimeric porphyrins bridged by ethynylenes showed power conversion efficiencies (PCEs) of more than 8%. In this study, we design and synthesize a new conjugated dimeric D-A porphyrin ZnP2BT-RH, in which the two porphyrin units are linked by an electron accepting benzothiadiazole (BT) unit. The introduction of the BT unit enhances the electron delocalization, resulting in a lower highest occupied molecular orbital (HOMO) energy level and an increased molar extinction coefficient in the near-infrared (NIR) region. The bulk heterojunction solar cells with ZnP2BT-RH as the donor material exhibit a high PCE of up to 10% with a low energy loss (Eloss) of only 0.56 eV. The 10% PCE is the highest for porphyrin-based OSCs with a conventional structure, and this Eloss is also the smallest among those reported for small molecule-based OSCs with a PCE higher than 10% to date
Local spin polarisation of electrons in Rashba semiconductor nanowires: effects of the bound state
The local spin polarisation (LSP) of electrons in two typical semiconductor
nanowires under the modulation of Rashba spin-orbit interaction (SOI) is
investigated theoretically. The influence of both the SOI- and
structure-induced bound states on the LSP is taken into account via the
spin-resolved lattice Green function method. It is discovered that high
spin-density islands with alternative signs of polarisation are formed inside
the nanowires due to the interaction between the bound states and the Rashba
effective magnetic field. Further study shows that the spin-density islands
caused by the structure-induced bound state exhibit a strong robustness against
disorder. These findings may provide an efficient way to create local magnetic
moments and store information in semiconductors.Comment: 8 pages, 3 figure
Perturbational approach to the quantum capacity of additive Gaussian quantum channel
For a quantum channel with additive Gaussian quantum noise, at the large
input energy side, we prove that the one shot capacity is achieved by the
thermal noise state for all Gaussian state inputs, it is also true for
non-Gaussian input in the sense of first order perturbation. For a general case
of copies input, we show that up to first order perturbation, any
non-Gaussian perturbation to the product thermal state input has a less quantum
information transmission rate when the input energy tend to infinitive.Comment: 5 page
Detecting Extra Dimension by Helium-like Ions
Considering that gravitational force might deviate from Newton's
inverse-square law and become much stronger in small scale, we present a method
to detect the possible existence of extra dimensions in the ADD model. By
making use of an effective variational wave function, we obtain the
nonrelativistic ground energy of a helium atom and its isoelectronic sequence.
Based on these results, we calculate gravity correction of the ADD model. Our
calculation may provide a rough estimation about the magnitude of the
corresponding frequencies which could be measured in later experiments.Comment: 8 pages, no figures, accepted by Mod. Phys. Lett.
- …