Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3_{3}/SrTi0.99_{0.99}Nb0.01_{0.01}O3_{3}

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.Comment: 3 pages, 3 figures, Appl. Phys. Lett., in pres

Novel Orbital Ordering induced by Anisotropic Stress in a Manganite Thin Film

We performed resonant and nonresonant x-ray diffraction studies of a Nd0.5Sr0.5MnO3 thin film that exhibits a clear first-order transition. Lattice parameters vary drastically at the metal-insulator transition at 170K (=T_MI), and superlattice reflections appear below 140K (=T_CO). The electronic structure between T_MI and T_CO is identified as A-type antiferromagnetic with the d_{x2-y2} ferroorbital ordering. Below T_CO, a new type of antiferroorbital ordering emerges. The accommodation of the large lattice distortion at the first-order phase transition and the appearance of the novel orbital ordering are brought about by the anisotropy in the substrate, a new parameter for the phase control.Comment: 4pages, 4figure

Multivalued memory effects in electronic phase-change manganites controlled by Joule heating

Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between ferromagnetic metallic and charge-ordered insulating states. The current/voltage effects observed in this study are explained by the self-heating effect, which enable us to control the colossal electroresistance effects. This thermal-cycle induced switching between electronic solid and liquid states can be regarded as electronic version of atomic crystal/amorphous transitions in phase-change chalcogenides.Comment: 5 pages, 4 figures. to appear in Phys. Rev.

Crystallographic and superconducting properties of the fully-gapped noncentrosymmetric 5d-electron superconductors CaMSi3 (M=Ir, Pt)

We report crystallographic, specific heat, transport, and magnetic properties of the recently discovered noncentrosymmetric 5d-electron superconductors CaIrSi3 (Tc = 3.6 K) and CaPtSi3 (Tc = 2.3 K). The specific heat suggests that these superconductors are fully gapped. The upper critical fields are less than 1 T, consistent with limitation by conventional orbital depairing. High, non-Pauli-limited {\mu}0 Hc2 values, often taken as a key signature of novel noncentrosymmetric physics, are not observed in these materials because the high carrier masses required to suppress orbital depairing and reveal the violated Pauli limit are not present.Comment: 8 pages, 8 figure

Imaging Oxygen Defects and their Motion at a Manganite Surface

Manganites are technologically important materials, used widely as solid oxide fuel cell cathodes: they have also been shown to exhibit electroresistance. Oxygen bulk diffusion and surface exchange processes are critical for catalytic action, and numerous studies of manganites have linked electroresistance to electrochemical oxygen migration. Direct imaging of individual oxygen defects is needed to underpin understanding of these important processes. It is not currently possible to collect the required images in the bulk, but scanning tunnelling microscopy could provide such data for surfaces. Here we show the first atomic resolution images of oxygen defects at a manganite surface. Our experiments also reveal defect dynamics, including oxygen adatom migration, vacancy-adatom recombination and adatom bistability. Beyond providing an experimental basis for testing models describing the microscopics of oxygen migration at transition metal oxide interfaces, our work resolves the long-standing puzzle of why scanning tunnelling microscopy is more challenging for layered manganites than for cuprates.Comment: 7 figure