Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface

Suppression of Superconducting Critical Current Density by Small Flux Jumps in MgB2MgB_2 Thin Films

By doing magnetization measurements during magnetic field sweeps on thin films of the new superconductor $MgB_2$, it is found that in a low temperature and low field region small flux jumps are taking place. This effect strongly suppresses the central magnetization peak leading to reduced nominal superconducting critical current density at low temperatures. A borderline for this effect to occur is determined on the field-temperature (H-T) phase diagram. It is suggested that the small size of the flux jumps in films is due to the higher density of small defects and the relatively easy thermal diffusion in thin films in comparison with bulk samples.Comment: 7 figures Phys. Rev. B accepted scheduled issue: 01 Feb 200

Interface structure and strain relaxation in BaTiO3 thin films grown on GdScO3 and DyScO3 substrates with buried coherent SrRuO3 layer

To obtain the electrical properties of strained ferroelectric thin films, bottom electrodes with lattice constants and thermal coefficients matched to both films and substrates are needed. The interface structure, strain configuration, and strain relaxation in such bilayer systems are different from those in single layer systems. Here, we report transmission electron microscopy studies of epitaxial BaTiO3 films grown on GdScO3 and DyScO3 substrates with buried SrRuO3 layers. We found that the different strain relaxation behaviors observed in the bilayer are mainly dependent on lattice mismatch of each layer to the substrate and the thicknesses of each layer.open7

Non-Fermi liquid behavior and scaling of low frequency suppression in optical conductivity spectra of CaRuO3_3

Optical conductivity spectra $\sigma_1(\omega)$ of paramagnetic CaRuO$_3$ are investigated at various temperatures. At T=10 K, it shows a non-Fermi liquid behavior of $\sigma_1(\omega)\sim 1/{\omega}^{\frac 12}$, similar to the case of a ferromagnet SrRuO$_3$. As the temperature ($T$) is increased, on the other hand, $\sigma_1(\omega)$ in the low frequency region is progressively suppressed, deviating from the 1/{\omega}^{\frac 12%}-dependence. Interestingly, the suppression of $\sigma_1(\omega)$ is found to scale with $\omega /T$ at all temperatures. The origin of the $$ scaling behavior coupled with the non-Fermi liquid behavior is discussed.Comment: 4 pages, 3 figure

Statistics of Heat Transfer in Mesoscopic Circuits

A method to calculate the statistics of energy exchange between quantum systems is presented. The generating function of this statistics is expressed through a Keldysh path integral. The method is first applied to the problem of heat dissipation from a biased mesoscopic conductor into the adjacent reservoirs. We then consider energy dissipation in an electrical circuit around a mesoscopic conductor. We derive the conditions under which measurements of the fluctuations of heat dissipation can be used to investigate higher order cumulants of the charge counting statistics of a mesoscopic conductor.Comment: 9 pages, 6 figure

Non-resonant microwave absorption studies of superconducting MgB_2

Non-resonant microwave absorption(NRMA) studies of superconducting MgB_2 at a frequency of 9.43 GHz in the field range -50 Gauss to 5000 Gauss are reported. The NRMA results indicate near absence of intergranular weak links. A linear temperature dependence of the lower critical field H_c1 is observed indicating a non s-wave superconductivity. However, the phase reversal of the NRMA signal which could suggest d-wave symmetry is also not observed.Comment: 8 pages, 2 figure

Direct Imaging of Graphene Edges: Atomic Structure and Electronic Scattering

We report an atomically-resolved scanning tunneling microscopy (STM) investigation of the edges of graphene grains synthesized on Cu foils by chemical vapor deposition (CVD). Most of the edges are macroscopically parallel to the zigzag directions of graphene lattice. These edges have microscopic roughness that is found to also follow zigzag directions at atomic scale, displaying many ~120 degree turns. A prominent standing wave pattern with periodicity ~3a/4 (a being the graphene lattice constant) is observed near a rare-occurring armchair-oriented edge. Observed features of this wave pattern are consistent with the electronic intervalley backscattering predicted to occur at armchair edges but not at zigzag edges

75As NMR probe of antiferromagnetic fluctuations in Ba(Fe1-xRux)2As2

The evolution of 75As NMR parameters with composition and temperature was probed in the Ba(Fe1-xRux)2As2 system where Fe is replaced by isovalent Ru. While the Ru-end member was found to be a conventional Fermi liquid, the composition (x=0.5) corresponding to the highest Tc (20K) in this system shows an upturn in 75As 1/T1T below about 80 K evidencing the presence of antiferromagnetic (AFM) fluctuations. These results are similar to those obtained in another system with isovalent substitution BaFe2(As1-xPx)2 [Y. Nakai, T. Iye, S. Kitagawa, K. Ishida, H. Ikeda, S. Kasahara, H. Shishido, T. Shibauchi, Y. Matsuda, and T. Terashima, Phys. Rev. Lett. 105, 107003 (2010)] and point to the possible role of AFM fluctuations in driving superconductivity.Comment: 5 pages, 4 figure