2,845 research outputs found

    Watermarking FPGA Bitfile for Intellectual Property Protection

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    Intellectual property protection (IPP) of hardware designs is the most important requirement for many Field Programmable Gate Array (FPGA) intellectual property (IP) vendors. Digital watermarking has become an innovative technology for IPP in recent years. Existing watermarking techniques have successfully embedded watermark into IP cores. However, many of these techniques share two specific weaknesses: 1) They have extra overhead, and are likely to degrade performance of design; 2) vulnerability to removing attacks. We propose a novel watermarking technique to watermark FPGA bitfile for addressing these weaknesses. Experimental results and analysis show that the proposed technique incurs zero overhead and it is robust against removing attacks

    Entanglement detection via condition of quantum correlation

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    We develop a novel necessary condition of quantum correlation. It is utilized to construct dd-level bipartite Bell-type inequality which is strongly resistant to noise and requires only analyses of O(d)O(d) measurement outcomes compared to the previous result O(d2)O(d^{2}). Remarkably, a connection between the arbitrary high-dimensional bipartite Bell-type inequality and entanglement witnesses is found. Through the necessary condition of quantum correlation, we propose that the witness operators to detect truly multipartite entanglement for a generalized Greenberger-Horne-Zeilinger (GHZ) state with two local measurement settings and a four-qubit singlet state with three settings. Moreover, we also propose the first robust entanglement witness to detect four-level tripartite GHZ state with only two local measurement settings

    Preparation of p-type ZnMgO thin films by Sb doping method

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    We report on Sb-doped p-type Zn0.95Mg0.05O thin films grown by pulsed laser deposition. The Sb-doped Zn0.95Mg0.05O films show an acceptable p-type conductivity with a resistivity of 126 Ω cm, a Hall mobility of 1.71 cm2 V−1 s−1 and a hole concentration of 2.90 × 1016 cm−3 at room temperature. Secondary ion mass spectroscopy confirms that Sb has been incorporated into the Zn0.95Mg0.05O films. Guided by x-ray photoemission spectroscopy analysis and a model for large-size-mismatched group-V dopants in ZnO, an SbZn–2VZn complex is believed to be the most possible acceptor in the Sb-doped p-type Zn0.95Mg0.05O thin films.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/58103/2/d7_14_020.pd

    Inner surface enhanced femtosecond second harmonic generation in thin ZnO crystal tubes

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    At room temperature, efficient second harmonic generation (SHG) emission is observed in thin ZnO crystal hollow rods (tubes) with diameter∼0.2 mm under the excitation of femtosecond laser from 700 to 860 nm. Power and polarization dependence of the SHG signal on the primary excitation beam is also measured. The multiple total reflections between the outer and inner surfaces of the sample are analyzed to be responsible for the efficient SHG. Ninefold amplification of SHG signal in the tube structure is estimated. © 2011 American Institute of Physics.published_or_final_versio
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