Suppression of stored-beam oscillation and observation of flux improvement during top-up injection

This paper describes a start-to-end study of the suppression of stored-beam oscillation during top-up injection at the Pohang Light Source (PLS-II) beam line. The fast counterkicker implemented in PLS-II suppresses stored-beam oscillations in the vertical plane. During top-up injection in the magnetic spectroscopy beam line of PLS-II, flux improvement due to the suppression of stored-beam oscillation was clearly observed.11Ysciescopu

Shifting Home Energy Consumption Through a Holistic Understanding of the Home System of Practice

This chapter describes the concept of the home system of practice, which can be used to provide a deeper understanding of the social system of the home and inform long-term solutions for enabling domestic energy reduction. More traditional methods have attempted to persuade occupants to change behaviour through the use of information campaigns and feedback technology. However, these interventions are usually short lived as they ignore the underlying reasons for practices to occur. A more effective solution is through practice-oriented design, which co-creates innovative technology with the user. In addition, the emergence and use of automated technology enables practices to act independently of the user. Yet, the success of automation is also reliant on an understanding of the home system of practice, occupant needs and skills

UBVI Surface Photometry of the Spiral Galaxy NGC 300 in the Sculptor Group

We present UBVI surface photometry for 20.'5 X 20.'5 area of a late-type spiral galaxy NGC 300. In order to understand the morphological properties and luminosity distribution characteristics of NGC 300, we have derived isophotal maps, surface brightness profiles, ellipticity profiles, position angle profiles, and color profiles. By merging the I-band data of our surface brightness measurements with those of Boeker et al. (2002) based on Hubble Space Telescope observations, we have made combined I-band surface brightness profiles for the region of 0."02 < r < 500" and decomposed the profiles into three components: a nucleus, a bulge, and an exponential disk.Comment: 16 pages(cjaa209.sty), Accepted by the Chinese J. Astron. Astrophys., Fig 2 and 8 are degraded to reduce spac

Does tenure matter for occupant experiences of low-energy housing?

International policy settings are looking toward low-energy and near zero-energy homes as a solution to address environmental impacts, particularly anthropogenic climate change. There is increasing research evaluating sus-tainable housing developments from a technical and occupant perspective. One of the key determinants of household energy use is tenure. However, there is limited research which has looked at if tenure impacts on how oc-cupants experience low-energy homes. This paper contributes to the litera-ture by exploring three low-energy housing developments and exploring the role of tenure in relation to how the households experience the dwellings. The case studies demonstrate that social housing tenants have frustrations with a lack of control over what they could, or could not, do to their low-energy dwellings, in comparison to owner-occupier housing

Fabrication of Coaxial Si1−xGex Heterostructure Nanowires by O2 Flow-Induced Bifurcate Reactions

We report on bifurcate reactions on the surface of well-aligned Si1−xGex nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si1−xGex nanowires were grown in a chemical vapor transport process using SiCl4 gas and Ge powder as a source. After the growth of nanowires, SiCl4 flow was terminated while O2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO2 by the O2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O2 pressure without any intermediate region and enables selectively fabricated Ge/Si1−xGex or SiO2/Si1−xGex coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively

Evidence for the decay B0->eta pi^0

We report a search for the charmless hadronic decay $B^0\to\eta \pi^0$ with a data sample corresponding to an integrated luminosity of 694 $\rm fb^{-1}$ containing $753\times10^6$ $B\bar{B}$ pairs. The data were collected by the Belle experiment running on the $\Upsilon(4S)$ resonance at the KEKB $e^+e^-$ collider. We measure a branching fraction $\mathcal{B}(B^0\to\eta\pi^0)=(4.1^{+1.7+0.5}_{-1.5-0.7})\times 10^{-7}$, where the first uncertainty is statistical and the second is systematic. Our measurement gives an upper limit of $\mathcal{B}(B^0\to\eta\pi^0)<6.5\times 10^{-7}$ at 90\% confidence level. The signal has a significance of $3.0$ standard deviations and constitutes the first evidence for this decay mode.Comment: 11 pages, 3 figures, 2 tables, submitted to Physical Review D(R

Regulation of cAMP and GSK3 signaling pathways contributes to the neuronal conversion of glioma

Glioma is the most malignant type of primary central nervous system tumors, and has an extremely poor prognosis. One potential therapeutic approach is to induce the terminal differentiation of glioma through the forced expression of pro-neural factors. Our goal is to show the proof of concept of the neuronal conversion of C6 glioma through the combined action of small molecules. We investigated the various changes in gene expression, cell-specific marker expression, signaling pathways, physiological characteristics, and morphology in glioma after combination treatment with two small molecules (CHIR99021, a glycogen synthase kinase 3 [GSK3] inhibitor and forskolin, a cyclic adenosine monophosphate [cAMP] activator). Here, we show that the combined action of CHIR99021 and forskolin converted malignant glioma into fully differentiated neurons with no malignant characteristics; inhibited the proliferation of malignant glioma; and significantly down-regulated gene ontology and gene expression profiles related to cell division, gliogenesis, and angiogenesis in small molecule-induced neurons. In vivo, the combined action of CHIR99021 and forskolin markedly delayed neurological deficits and significantly reduced the tumor volume. We suggest that reprogramming technology may be a potential treatment strategy replacing the therapeutic paradigm of traditional treatment of malignant glioma, and a combination molecule comprising a GSK3 inhibitor and a cAMP inducer could be the next generation of anticancer drugs

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges