16 research outputs found
Absence of correlation between built-in electric dipole moment and quantum Stark effect in InAs/GaAs self-assembled quantum dots
We report significant deviations from the usual quadratic dependence of the
ground state interband transition energy on applied electric fields in
InAs/GaAs self-assembled quantum dots. In particular, we show that conventional
second-order perturbation theory fails to correctly describe the Stark shift
for electric field below kV/cm in high dots. Eight-band calculations demonstrate this effect is predominantly due to
the three-dimensional strain field distribution which for various dot shapes
and stoichiometric compositions drastically affects the hole ground state. Our
conclusions are supported by two independent experiments.Comment: 4 pages, 4 figure
Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs)
are predicted to exhibit a strong non-parabolic dependence of the interband
transition energy on the electric field, which is not encountered in single SAD
structures nor in other types of quantum structures. Our study based on an
eight-band strain-dependent Hamiltonian indicates that
this anomalous quantum confined Stark effect is caused by the three-dimensional
strain field distribution which influences drastically the hole states in the
stacked SAD structures.Comment: 4 pages, 4 figure
Epitaxial Growth Kinetics with Interacting Coherent Islands
The Stranski-Krastanov growth kinetics of undislocated (coherent)
3-dimensional islands is studied with a self-consistent mean field rate theory
that takes account of elastic interactions between the islands. The latter are
presumed to facilitate the detachment of atoms from the islands with a
consequent decrease in their average size. Semi-quantitative agreement with
experiment is found for the time evolution of the total island density and the
mean island size. When combined with scaling ideas, these results provide a
natural way to understand the often-observed initial increase and subsequent
decrease in the width of the coherent island size distribution.Comment: 4 pages, 4 figure
Self-assembly of quantum dots: effect of neighbor islands on the wetting in coherent Stranski-Krastanov growth
The wetting of the homogeneously strained wetting layer by dislocation-free
three-dimensional islands belonging to an array has been studied. The array has
been simulated as a chain of islands in 1+1 dimensions. It is found that the
wetting depends on the density of the array, the size distribution and the
shape of the neighbor islands. Implications for the self-assembly of quantum
dots grown in the coherent Stranski-Krastanov mode are discussed.Comment: 4 pages, 6 figures, accepted version, minor change
1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
High pulse repetition rate (≥10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices
GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature