93 research outputs found

    Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

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    The surface morphology of Ge0.96Sn0.04/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statistical data for the density of Ge0.96Sn0.04 nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 × 1011 cm-2) with the average lateral size of 7 nm can be obtained at 250°C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge1-xSnx heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450°C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge0.96Sn0.04 films is found to depend on the temperature of the substrate

    Determination of reference values for optical properties of liquid phantoms based on Intralipid and India ink

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    A multi-center study has been set up to accurately characterize the optical properties of diffusive liquid phantoms based on Intralipid and India ink at near-infrared (NIR) wavelengths. Nine research laboratories from six countries adopting different measurement techniques, instrumental set-ups, and data analysis methods determined at their best the optical properties and relative uncertainties of diffusive dilutions prepared with common samples of the two compounds. By exploiting a suitable statistical model, comprehensive reference values at three NIR wavelengths for the intrinsic absorption coefficient of India ink and the intrinsic reduced scattering coefficient of Intralipid-20% were determined with an uncertainty of about 2% or better, depending on the wavelength considered, and 1%, respectively. Even if in this study we focused on particular batches of India ink and Intralipid, the reference values determined here represent a solid and useful starting point for preparing diffusive liquid phantoms with accurately defined optical properties. Furthermore, due to the ready availability, low cost, long-term stability and batch-to-batch reproducibility of these compounds, they provide a unique fundamental tool for the calibration and performance assessment of diffuse optical spectroscopy instrumentation intended to be used in laboratory or clinical environment. Finally, the collaborative work presented here demonstrates that the accuracy level attained in this work for optical properties of diffusive phantoms is reliable

    Anisotropic roughness in Ge/Si superlattices

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    We discuss measurements of buried interfaces utilizing x-ray specular reflectivity profiles, and high-resolution x-ray reflectivity measurement of diffuse scattering. Interface structure is compared to atomic force microscopy characterization of the morphology of the Si cap layer overlying the buried structures. The results show that the morphology of roughness on the growth surface is greatly influenced by substrate miscut, and tends to form one-dimensional undulations. Roughness along the miscut direction is highly replicated from interface to interface, but roughness perpendicular to the miscut evolves more rapidly during the growth process. This effect is characterized by a reduced vertical correlation length in x-ray diffuse scattering in one azimuthal orientation.NRC publication: Ye
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