22,074 research outputs found

    A further study of the possible scaling region of lattice chiral fermions

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    In the possible scaling region for an SU(2) lattice chiral fermion advocated in {\it Nucl. Phys.} B486 (1997) 282, no hard spontaneous symmetry breaking occurs and doublers are gauge-invariantly decoupled via mixing with composite three-fermion-states that are formed by local multifermion interactions. However the strong coupling expansion breaks down due to no ``static limit'' for the low-energy limit (pa∼0pa\sim 0). In both neutral and charged channels, we further analyze relevant truncated Green functions of three-fermion-operators by the strong coupling expansion and analytical continuation of these Green functions in the momentum space. It is shown that in the low-energy limit, these relevant truncated Green functions of three-fermion-states with the ``wrong'' chiralities positively vanish due to the generalized form factors (the wave-function renormalizations) of these composite three-fermion-states vanishing as O((pa)^4) for pa∼0pa\sim 0. This strongly implies that the composite three-fermion-states with ``wrong'' chirality are ``decoupled'' in this limit and the low-energy spectrum is chiral, as a consequence, chiral gauge symmetries can be exactly preserved.Comment: A few typing-errors, in particular in Eq.50, have been correcte

    Power grids vulnerability: a complex network approach

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    Power grids exhibit patterns of reaction to outages similar to complex networks. Blackout sequences follow power laws, as complex systems operating near a critical point. Here, the tolerance of electric power grids to both accidental and malicious outages is analyzed in the framework of complex network theory. In particular, the quantity known as efficiency is modified by introducing a new concept of distance between nodes. As a result, a new parameter called net-ability is proposed to evaluate the performance of power grids. A comparison between efficiency and net-ability is provided by estimating the vulnerability of sample networks, in terms of both the metrics.Comment: 16 pages, 3 figures. Figure 2 and table II modified. Typos corrected. Version accepted for publication in Chao

    Strong electric fields induced on a sharp stellar boundary

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    Due to a first order phase transition, a compact star may have a discontinuous distribution of baryon as well as electric charge densities, as e.g. at the surface of a strange quark star. The induced separation of positive and negative charges may lead to generation of supercritical electric fields in the vicinity of such a discontinuity. We study this effect within a relativistic Thomas-Fermi approximation and demonstrate that the strength of the electric field depends strongly on the degree of sharpness of the surface. The influence of strong electric fields on the stability of compact stars is discussed. It is demonstrated that stable configurations appear only when the counter-pressure of degenerate fermions is taken into consideration.Comment: 13 pages, 2 figure

    Orientation and strain modulated electronic structures in puckered arsenene nanoribbons

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    Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crutial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene

    Photoproduction in semiconductors by onset of magnetic field

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    The energy bands of a semiconductor are lowered by an external magnetic field. When a field is switched on, the straight-line trajectories near the top of the occupied valence band are curved into Landau orbits and Bremsstrahlung is emitted until the electrons have settled in their final Fermi distribution. We calculate the radiated energy, which should be experimentally detectable, and suggest that a semiconductor can be cooled by an oscillating magnetic field
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