Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the long-range tail of the charge transfer, leading to an injection barrier thickness comparable to half of the nanotube length until the nanotube reaches the bulk limit. The conductance of the nanotube junction shows a transition from tunneling to thermally-activated transport with increasing nanotube length

Electron transport in semiconducting carbon nanotubes with hetero-metallic contacts

We present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotube in contact with metal electrodes of different work functions, which shows simultaneous electron and hole doping inside the nanotube junction through contact-induced charge transfer. We find that the band lineup in the nanotube bulk region is determined by the effective work function difference between the nanotube channel and source/drain electrodes, while electron transmission through the SWNT junction is affected by the local band structure modulation at the two metal-nanotube interfaces, leading to an effective decoupling of interface and bulk effects in electron transport through nanotube junction devices.Comment: Higher quality figures available at http://www.albany.edu/~yx15212

Negative Differential Resistance in the Scanning Tunneling Spectroscopy of Organic molecules

The conductance-voltage spectrum of molecular nanostructures measured by scanning tunneling spectroscopy (STS) is generally assumed to reflect the local density of states of the molecule. This excludes the possibility of observing negative differential resistance (NDR). We report here the observation of NDR in the scanning tunneling microscope (STM) current-voltage (I-V) characteristics of self-assembled monolayer (SAM) of 4-p-Terphenylthiol molecules on gold substrate measured using a platinum probe. We argue that the NDR arises from narrow structures in the local density of states at the tip apex atom and show that depending on the electrostatic potential profile across the system, NDR could be observed in one or both bias directions.Comment: 13 Pages, 4 figures, submitted to Phys. Rev. B Rapid Communicatio

Mechanical modulation of single-electron tunneling through molecular-assembled metallic nanoparticles

We present a microscopic study of single-electron tunneling in nanomechanical double-barrier tunneling junctions formed using a vibrating scanning nanoprobe and a metallic nanoparticle connected to a metallic substrate through a molecular bridge. We analyze the motion of single electrons on and off the nanoparticle through the tunneling current, the displacement current and the charging-induced electrostatic force on the vibrating nanoprobe. We demonstrate the mechanical single-electron turnstile effect by applying the theory to a gold nanoparticle connected to the gold substrate through alkane dithiol molecular bridge and probed by a vibrating platinum tip.Comment: Accepted by Phys. Rev.

Hyperspectral and multispectral image fusion via tensor sparsity regularization

Hyperspectral image (HSI) super-resolution scheme based on HSI and multispectral image (MSI) fusion has been a prevalent research theme in remote sensing. However, most of the existing HSI-MSI fusion (HMF) methods adopt the sparsity prior across spatial or spectral domains via vectorizing hyperspectral cubes along a certain dimension, which results in the spatial or spectral informations distortion. Moreover, the current HMF works rarely pay attention to leveraging the nonlocal similar structure over spatial domain of the HSI. In this paper, we propose a new HSI-MSI fusion approach via tensor sparsity regularization which can encode essential spatial and spectral sparsity of an HSI. Specifically, we study how to utilize reasonably the sparsity of tensor to describe the spatialspectral correlation hidden in an HSI. Then, we resort to an efficient optimization strategy based on the alternative direction multiplier method (ADMM) for solving the resulting minimization problem. Experimental results on Pavia University data verify the merits of the proposed HMF algorithm

A Novel Adaptive Spectrum Noise Cancellation Approach for Enhancing Heartbeat Rate Monitoring in a Wearable Device

This paper presents a novel approach, Adaptive Spectrum Noise Cancellation (ASNC), for motion artifacts removal in Photoplethysmography (PPG) signals measured by an optical biosensor to obtain clean PPG waveforms for heartbeat rate calculation. One challenge faced by this optical sensing method is the inevitable noise induced by movement when the user is in motion, especially when the motion frequency is very close to the target heartbeat rate. The proposed ASNC utilizes the onboard accelerometer and gyroscope sensors to detect and remove the artifacts adaptively, thus obtaining accurate heartbeat rate measurement while in motion. The ASNC algorithm makes use of a commonly accepted spectrum analysis approaches in medical digital signal processing, discrete cosine transform, to carry out frequency domain analysis. Results obtained by the proposed ASNC have been compared to the classic algorithms, the adaptive threshold peak detection and adaptive noise cancellation. The mean (standard deviation) absolute error and mean relative error of heartbeat rate calculated by ASNC is 0.33 (0.57) beats·min-1 and 0.65%, by adaptive threshold peak detection algorithm is 2.29 (2.21) beats·min-1 and 8.38%, by adaptive noise cancellation algorithm is 1.70 (1.50) beats·min-1 and 2.02%. While all algorithms performed well with both simulated PPG data and clean PPG data collected from our Verity device in situations free of motion artifacts, ASNC provided better accuracy when motion artifacts increase, especially when motion frequency is very close to the heartbeat rate

Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces

We present an atomistic self-consistent tight-binding study of the electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube channel length when the end of the nanotube wire is buried inside the electrodes. We show that the lineup of the nanotube band structure relative to the metal Fermi-level depends strongly on the metal work function but weakly on the details of the interface. We analyze the length-dependent transport characteristics, which predicts a transition from tunneling to thermally-activated transport with increasing nanotube channel length.Comment: To appear in Phys.Rev.B Rapid Communications. Color figures available in PRB online versio