Meromorphic Solutions of Some Algebraic Differential Equations

By means of the normal family theory, we estimate the growth order of meromorphic solutions of some algebraic differential equations and improve the related results of Barsegian et al. (2002). We also give some examples to show that our results occur in some special cases

Spherical contact mechanical analysis of roller cone drill bits journal bearing

AbstractFang contact model is introduced to analyze stress of the spherical fixed ring journal bearing. Developed calculation programs in the MATLAB software which are utilized to calculate the contact characteristics of roller cone drill bits spherical fixed ring journal bearing. In addition, effects of external load, radius clearance values, and material parameter on the mechanics performance were investigated. The results show that the value of external load has a direct pronounced effect on the contact characteristics of journal bearing. There is a significant positive correlation between contact pressure and external load, radius clearance value, and the Young's modulus of material. However, there is an evident negative correlation between contact radius of journal bearing and radius clearance value, and the Young's modulus of material. The smaller radius clearance value of journal bearing is, the more centralized contact region will be, so the corresponding contact pressure will be higher. From the perspective of reducing friction and wear, we need select the materials which have high strength and good toughness. Not only might this can improve the wear resistance, it also effectively decreases the contact pressure. In this case, we can prolong the service life of roller cone drill bits journal bearing

GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching

Currently, applying graphene on GaN based electronic devices requires the troublesome, manual, lengthy, and irreproducible graphene transfer procedures, making it infeasible for real applications. Here, a semiconductor industry compatible technique for the in situ growth of patterned graphene directly onto GaN LED epiwafers for transparent heat-spreading electrode application is introduced. Pre-patterned sacrificial Co acts as both an etching mask for the GaN mesa and a catalyst for graphene growth. The Co helps in catalyzing the hydrocarbon decomposition and the subsequent graphitization, and is removed by wet etching afterwards. The use of plasma enhancement in the graphene chemical vapor deposition reduces the growth temperature to as low as 600 °C and improves the graphene quality, where highly crystalline graphene can be obtained in just 2 min of deposition. This method reduces the exposure of the GaN epilayers to high temperature to its limit, avoiding the well-known GaN decomposition and In segregation problems. Importantly, it can directly pattern the graphene without using additional lithographic steps and in doing so avoids any unintentional deleterious doping and damage of graphene from contact with the photoresist. The approach simplifies the fabrication and enables mass production by eliminating the bottlenecks of graphene transfer and patterning procedures. By comparing the GaN LEDs with and without graphene, we find that graphene greatly improves the device optical, electrical and thermal performances, due to the high optical transparency (91.74%) and high heat spreading capability of the graphene electrode. Unlike transferred graphene, this method is intrinsically scalable, reproducible, and compatible with the planar process, and is beneficial to the industrialization of GaN-graphene optoelectronic devices, where the integrated graphene serves as a superior sustainable and functional substitute to other transparent conducting materials such as ITO.<br/

Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst

Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts

GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching

Currently, applying graphene on GaN based electronic devices requires the troublesome, manual, lengthy, and irreproducible graphene transfer procedures, making it infeasible for real applications. Here, a semiconductor industry compatible technique for the in situ growth of patterned graphene directly onto GaN LED epiwafers for transparent heat-spreading electrode application is introduced. Pre-patterned sacrificial Co acts as both an etching mask for the GaN mesa and a catalyst for graphene growth. The Co helps in catalyzing the hydrocarbon decomposition and the subsequent graphitization, and is removed by wet etching afterwards. The use of plasma enhancement in the graphene chemical vapor deposition reduces the growth temperature to as low as 600 °C and improves the graphene quality, where highly crystalline graphene can be obtained in just 2 min of deposition. This method reduces the exposure of the GaN epilayers to high temperature to its limit, avoiding the well-known GaN decomposition and In segregation problems. Importantly, it can directly pattern the graphene without using additional lithographic steps and in doing so avoids any unintentional deleterious doping and damage of graphene from contact with the photoresist. The approach simplifies the fabrication and enables mass production by eliminating the bottlenecks of graphene transfer and patterning procedures. By comparing the GaN LEDs with and without graphene, we find that graphene greatly improves the device optical, electrical and thermal performances, due to the high optical transparency (91.74%) and high heat spreading capability of the graphene electrode. Unlike transferred graphene, this method is intrinsically scalable, reproducible, and compatible with the planar process, and is beneficial to the industrialization of GaN-graphene optoelectronic devices, where the integrated graphene serves as a superior sustainable and functional substitute to other transparent conducting materials such as ITO.<br/

Comprehensive insight of the Cambrian carbonate platform types as well as margin segmentation characteristics' exploration in Tarim Basin, China

The carbonate platform types and features of the platform margin belt plays an important role in controlling the reservoir formation; it also affects the relationship between reservoirs and caps. The Cambrian carbonate platform in the Tarim Basin underwent three evolutionary processes, namely, the Early Cambrian ramp platform, the Middle Cambrian edging evaporative platform, and the Late Cambrian edging platform; the northern platform margin was the deposition type, whereas the eastern platform margin was for fault control, additionally, the Lungu-Gucheng had evident sectional differences. The line from Wushi-Kashi-Maigaiti-Hetian to Minfeng of the southwestern Tarim Basin was an ancient land in the Early Cambrian. Through evolution, the sea level raised the underwater lows in the Middle and Late Cambrian period that possibly developed it to platform edge deposits in the Late Cambrian. The carbonate platform margin of both steep slope and gentle slope formed different reservoir-seal assemblages. The Upper Cambrian aggradation-progradation platform margin reservoir in the steep slope of the eastern Lungu and Gucheng area was developed with good connectivity, its caprock had been always the key of the platform margin reservoir-seal assemblages. Therefore, the reef-beach located behind the platform margin belt near the seaside of the lagoon had favorable reservoirs; the reservoirs often overlaid carbonate caprock which formed good reservoir-seal assemblages. The platform margin belt in the gentle slope in the Well Yingmai 7-Well Yingmai 8, in west Tabei, was a dolomite reservoir for algal mound and reef-bank complex with caprock of middle-lower Cambrian dolomicrite, gypsum dolomite, and mud dolomite. Aforementioned dense layers' reservoir-seal assemblage was superior to that of the eastern Lungu and Gucheng that had better exploration prospects

Model for predicting immunotherapy based on M2 macrophage infiltration in TNBC

IntroductionCompared to other types of breast cancer, triple-negative breast cancer (TNBC) does not effectively respond to hormone therapy and HER2 targeted therapy, showing a poor prognosis. There are currently a limited number of immunotherapeutic drugs available for TNBC, a field that requires additional development.MethodsCo-expressing genes with M2 macrophages were analyzed based on the infiltration of M2 macrophages in TNBC and the sequencing data in The Cancer Genome Atlas (TCGA) database. Consequently, the influence of these genes on the prognoses of TNBC patients was analyzed. GO analysis and KEGG analysis were performed for exploring potential signal pathways. Lasso regression analysis was conducted for model construction. The TNBC patients were scored by the model, and patients were divided into high- and low-risk groups. Subsequently, the accuracy of model was further verified using GEO database and patients information from the Cancer Center of Sun Yat-sen University. On this basis, we analyzed the accuracy of prognosis prediction, correlation with immune checkpoint, and immunotherapy drug sensitivity in different groups.ResultsOur findings revealed that OLFML2B, MS4A7, SPARC, POSTN, THY1, and CD300C genes significantly influenced the prognosis of TNBC. Moreover, MS4A7, SPARC, and CD300C were finally determined for model construction, and the model showed good accuracy in prognosis prediction. And 50 immunotherapy drugs with therapeutic significance in different groups were screened, which were assessed possible immunotherapeutics that have potential application and demonstrated the high precision of our prognostic model for predictive analysis.ConclusionMS4A7, SPARC, and CD300C, the three main genes used in our prognostic model, offer good precision and clinical application potential. Fifty immune medications were assessed for their ability to predict immunotherapy drugs, providing a novel approach to immunotherapy for TNBC patients and a more reliable foundation for applying drugs in subsequent treatments