Influence of substrate bias on the scratch, wear and indentation response of TiSiN nanocomposite coatings

TiSiN coatings were synthesised onto AISI M42 tool steel substrates via closed field unbalanced magnetron sputtering ion plating, using bias voltages of −40 and −50 V. The aim of this study is to investigate the underlying deformation mechanisms of TiSiN coatings, prepared at two different substrate bias voltages, following scratching, wear and indentation tests. A graded columnar microstructure evolved in these coatings. A hardness value of ~30.2 GPa was determined in the coating prepared at the lower bias voltage (i.e., −40 V), which was correlated to the fine nanocomposite structure and the presence of a high compressive residual stress. Of note, for the coating deposited at −40 V enhanced scratch adhesion strength, i.e., higher critical loads (Lc1 and Lc2) against cohesive and adhesive failure were determined with the higher H/Er and H3/Er2 values. The improved scratch resistance was ascribed to the hierarchical structure that hindered crack propagation in the TiSiN coatings during progressive loading. An approximately 21% decrease in wear rate was obtained at the lower bias voltage, which was attributed to the slightly lower Si concentration (~8.3 at.%) and, in turn, higher hardness. Deformation behaviour under indentation loading was dominated by shear sliding along the columnar grain boundaries

TiN versus TiSiN coatings in indentation, scratch and wear setting

The indentation response, scratch behaviour and wear performance of binary TiN and ternary TiSiN coatings under a variety of loading conditions were comparatively studied. The coatings were fabricated onto M42 steel substrates via closed field unbalanced magnetron sputtering ion plating. A maximum hardness value of ~40 GPa was obtained for one of the TiSiN coatings as compared to ~28 GPa for TiN. This was attributed to the nanocomposite structure, grain refinement, solid solution hardening and the higher compressive residual stress in the ternary coatings. The damage resistance of both the TiN and TiSiN coatings under indentation loading was governed by the dampening effects of sliding or shearing of the columnar grains along the grain boundaries coupled with the coatings’ respective mechanical characteristics. Improved scratch adhesion properties (i.e., higher LC1, LC2 and CPR values) were also observed for the TiSiN coatings that were underlain by their superior mechanical properties along with the graded structure, promoting the capacity to resist crack formation and delamination. Lower wear rates for the TiSiN coatings during dry sliding were found to be consistent with their higher H/Er, H3/Er2 and We values

Historic Light Curve and Long-term Optical Variation of BL Lacertae 2200+420

In this paper, historical optical(UBVRI) data and newly observed data from the Yunnan Observatory of China(about100 years) are presented for BL Lacertae. Maximum variations in UBVRI: 5.12, 5.31, 4.73, 2.59, and 2.54 and color indices of U-B = -0.11 +/- 0.20, B-V= 1.0 +/- 0.11, V-R= 0.73 +/- 0.19, V-I= 1.42 +/- 0.25, R-I= 0.82 +/- 0.11, and B-I= 2.44 +/- 0.29 have been obtained from the literature; The Jurkevich method is used to investigate the existence of periods in the B band light curve, and a long-term period of 14 years is found. The 0.6 and 0.88 year periods reported by Webb et al.(1988) are confirmed. In addition, a close relation between B-I and B is found, suggesting that the spectra flattens when the source brightens.Comment: 21 pages, 6 figures, 2 table, aasms4.sty, to be published in ApJ, Vol. 507, 199

Anomalous behavior of trapping on a fractal scale-free network

It is known that the heterogeneity of scale-free networks helps enhancing the efficiency of trapping processes performed on them. In this paper, we show that transport efficiency is much lower in a fractal scale-free network than in non-fractal networks. To this end, we examine a simple random walk with a fixed trap at a given position on a fractal scale-free network. We calculate analytically the mean first-passage time (MFPT) as a measure of the efficiency for the trapping process, and obtain a closed-form expression for MFPT, which agrees with direct numerical calculations. We find that, in the limit of a large network order $V$, the MFPT $$ behaves superlinearly as $\sim V^{{3/2}}$ with an exponent 3/2 much larger than 1, which is in sharp contrast to the scaling $\sim V^{\theta}$ with $\theta \leq 1$, previously obtained for non-fractal scale-free networks. Our results indicate that the degree distribution of scale-free networks is not sufficient to characterize trapping processes taking place on them. Since various real-world networks are simultaneously scale-free and fractal, our results may shed light on the understanding of trapping processes running on real-life systems.Comment: 6 pages, 5 figures; Definitive version accepted for publication in EPL (Europhysics Letters

The central black hole masses and Doppler factors of the γ\gamma-ray loud blazars

In this paper, The central black hole masses and the Doppler factors are derived for PKS 0528+134, PKS 0537-441, 3C279, PKS 1406-074, PKS 1622-297, Q1633+382, Mkn 501, and BL Lacertae. The masses obtained are in the range of (1 -7)$\times 10^{7}M_{\odot}$ and compared with that obtained with the Klein-Nishina cross section considered (Dermer & Gehrels 1995). If we considered only the Thomson cross section, the masses are in the range of 2.6$\times 10^{6}M_{\odot}$ - 2$\times 10^{11}M_{\odot}$. The masses obtained from our method are less sensitive to the flux than those obtained from Dermer & Gehrels (1995) method. The masses obtained from two flares (1991 and 1996 flares) of 3C279 are almost the same. For 3C279 and BL Lacertae, viewing angle, $\theta$, and Lorentz factor, $\Gamma$, are estimated from the derived Doppler factor and the measured superluminal velocity. For 3C279, $\theta = 10^{\circ}.9-15^{\circ}.6$, $\Gamma$ = 2.4-14.4 for $\delta$ = 3.37; $\theta = 8^{\circ}.45-9^{\circ}.7$, $\Gamma$ = 2.95-11.20 for $\delta$ = 4.89; For BL Lacertae, $\theta = 25^{\circ}-29^{\circ}.4$, $\Gamma$ = 2.0-4.0.Comment: 5 pages, A&AS, 136, 13-18 (1999

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

A size-dependent strain relaxation and its effects on the optical properties of InGaN/GaN multiple quantum wells (QWs) in micro-pillars have been investigated through a combination of high spatial resolution cathodoluminescence (CL) hyperspectral imaging and numerical modeling. The pillars have diameters (d) ranging from 2 to 150 μm and were fabricated from a III-nitride light-emitting diode (LED) structure optimized for yellow-green emission at ∼560 nm. The CL mapping enables us to investigate strain relaxation in these pillars on a sub-micron scale and to confirm for the first time that a narrow (≤2 μm) edge blue-shift occurs even for the large InGaN/GaN pillars (d > 10 μm). The observed maximum blue-shift at the pillar edge exceeds 7 nm with respect to the pillar centre for the pillars with diameters in the 2–16 μm range. For the smallest pillar (d = 2 μm), the total blue-shift at the edge is 17.5 nm including an 8.2 nm “global” blue-shift at the pillar centre in comparison with the unetched wafer. By using a finite element method with a boundary condition taking account of a strained GaN buffer layer which was neglected in previous simulation works, the strain distribution in the QWs of these pillars was simulated as a function of pillar diameter. The blue-shift in the QWs emission wavelength was then calculated from the strain-dependent changes in piezoelectric field, and the consequent modification of transition energy in the QWs. The simulation and experimental results agree well, confirming the necessity for considering the strained buffer layer in the strain simulation. These results provide not only significant insights into the mechanism of strain relaxation in these micro-pillars but also practical guidance for design of micro/nano LEDs