10,709 research outputs found
Study on electromagnetically induced transparency effects in Dirac and VO hybrid material structure
In this paper, we present a metamaterial structure of Dirac and vanadium
dioxide and investigate its optical properties using the finite-difference
time-domain (FDTD) technique. Using the phase transition feature of vanadium
dioxide, the design can realize active tuning of the PIT effect at terahertz
frequency, thereby converting from a single PIT to a double PIT. When VO is
in the insulating state, the structure is symmetric to obtain a single-band PIT
effect; When VO is in the metallic state, the structure turns asymmetric to
realize a dual-band PIT effect. This design provides a reference direction for
the design of actively tunable metamaterials. Additionally, it is discovered
that the transparent window's resonant frequency and the Dirac material's Fermi
level in this structure have a somewhat linear relationship. In addition, the
structure achieves superior refractive index sensitivity in the terahertz band,
surpassing 1 THz/RIU. Consequently, the concept exhibits encouraging potential
for application in refractive index sensors and optical switches
Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches
Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the
potential to be used in high-performance graphene-based semiconductor
electronics. However, controlled growth of GNRs on dielectric substrates
remains a challenge. Here, we report the successful growth of GNRs directly on
hexagonal boron nitride substrates with smooth edges and controllable widths
using chemical vapour deposition. The approach is based on a type of template
growth that allows for the in-plane epitaxy of mono-layered GNRs in
nano-trenches on hexagonal boron nitride with edges following a zigzag
direction. The embedded GNR channels show excellent electronic properties, even
at room temperature. Such in-plane hetero-integration of GNRs, which is
compatible with integrated circuit processing, creates a gapped channel with a
width of a few benzene rings, enabling the development of digital integrated
circuitry based on GNRs.Comment: 32 pages, 4 figures, Supplementary informatio
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