10,709 research outputs found

    Study on electromagnetically induced transparency effects in Dirac and VO2_2 hybrid material structure

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    In this paper, we present a metamaterial structure of Dirac and vanadium dioxide and investigate its optical properties using the finite-difference time-domain (FDTD) technique. Using the phase transition feature of vanadium dioxide, the design can realize active tuning of the PIT effect at terahertz frequency, thereby converting from a single PIT to a double PIT. When VO2_2 is in the insulating state, the structure is symmetric to obtain a single-band PIT effect; When VO2_2 is in the metallic state, the structure turns asymmetric to realize a dual-band PIT effect. This design provides a reference direction for the design of actively tunable metamaterials. Additionally, it is discovered that the transparent window's resonant frequency and the Dirac material's Fermi level in this structure have a somewhat linear relationship. In addition, the structure achieves superior refractive index sensitivity in the terahertz band, surpassing 1 THz/RIU. Consequently, the concept exhibits encouraging potential for application in refractive index sensors and optical switches

    Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

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    Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.Comment: 32 pages, 4 figures, Supplementary informatio
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