Curcumin Reduces Cognitive Deficits by Inhibiting Neuroinflammation through the Endoplasmic Reticulum Stress Pathway in Apolipoprotein E4 Transgenic Mice.

Apolipoprotein E4 (ApoE4) is the main genetic risk factor for Alzheimer's disease (AD), but the exact way in which it causes AD remains unclear. Curcumin is considered to have good therapeutic potential for AD, but its mechanism has not been clarified. This study aims to observe the effect of curcumin on ApoE4 transgenic mice and explore its possible molecular mechanism. Eight-month-old ApoE4 transgenic mice were intraperitoneally injected with curcumin for 3 weeks, and the Morris water maze test was used to evaluate the cognitive ability of the mice. Immunofluorescence staining, immunohistochemistry, western blotting, and enzyme-linked immunosorbent assay (ELISA) were used to examine the brain tissues of the mice. Curcumin reduced the high expression of ApoE4 and the excessive release of inflammatory factors in ApoE4 mice. In particular, the expression of marker proteins of endoplasmic reticulum (ER) stress was significantly increased in ApoE4 mice, while curcumin significantly reduced the increase in the expression of these proteins. Collectively, curcumin alleviates neuroinflammation in the brains of ApoE4 mice by inhibiting ER stress, thus improving the learning and cognitive ability of transgenic mice

Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes

Avalanche photodiodes (APDs) with thin avalanche regions have shown low excess noise characteristics and high gain-bandwidth products, so they are suited for long-haul optical communications. In this work, we investigated how carrier injection profile affects the avalanche gain and excess noise factors of Al0.85Ga0.15As0.56Sb0.44 (lattice-matched to InP substrates) p-i-n and n-i-p diodes with total depletion widths of 145-240 nm. Different carrier injection profiles were achieved by using light with wavelengths of 420, 543 and 633nm. For p-i-n diodes, shorter wavelength light produces higher avalanche gains for a given reverse bias and lower excess noise factors at a given gain, compared to longer wavelength light. Thus, using 420 nm light on the p-i-n diodes, corresponding to pure electron injection conditions, gave the highest gain and lowest excess noise. In n-i-p diodes, pure hole injection yields significantly lower gain and higher excess noise, compared to mixed carrier injection. These show that the electron ionization coefficient, α, is higher than the hole ionization coefficient, β. Using pure electron injection, excess noise factor characteristics with effective ionization ratios, keff, of 0.08-0.1 were obtained. This is significantly lower than those of InP and In0.52Al0.48As, the commonly used avalanche materials combined with In0.53Ga0.47As absorber. The data reported in this paper is available from the ORDA digital repository (DOI: 10.15131/shef. DATA: 5787318)

Improved heat transfer for pyroelectric energy harvesting applications using a thermal conductive network of aluminum nitride in PMN–PMS–PZT ceramics

The harvesting of waste heat is attracting increasing attention, due to its abundance and potential benefits to the environment.</p