Direct Room Temperature Welding and Chemical Protection of Silver Nanowire Thin Films for High Performance Transparent Conductors

Silver nanowire (Ag-NW) thin films have emerged as a promising next-generation transparent electrode. However, the current Ag-NW thin films are often plagued by high NW–NW contact resistance and poor long-term stability, which can be largely attributed to the ill-defined polyvinyl­pyrrolidone (PVP) surface ligands and nonideal Ag–PVP–Ag contact at NW–NW junctions. Herein, we report a room temperature direct welding and chemical protection strategy to greatly improve the conductivity and stability of the Ag-NW thin films. Specifically, we use a sodium borohydride (NaBH₄) treatment process to thoroughly remove the PVP ligands and produce a clean Ag–Ag interface that allows direct welding of NW–NW junctions at room temperature, thus greatly improving the conductivity of the Ag-NW films, outperforming those obtained by thermal or plasmonic thermal treatment. We further show that, by decorating the as-formed Ag-NW thin film with a dense, hydrophobic dodecanethiol layer, the stability of the Ag-NW film can be greatly improved by 150-times compared with that of PVP-wrapped ones. Our studies demonstrate that a proper surface ligand design can effectively improve the conductivity and stability of Ag-NW thin films, marking an important step toward their applications in electronic and optoelectronic devices

Lateral Growth of Composition Graded Atomic Layer MoS_{2(1–<i>x</i>)}Se_2<i>x</i> Nanosheets

Band gap engineering of transition-metal dichalcogenides is an important task for their applications in photonics, optoelectronics, and nanoelectronics. We report for the first time the continuous lateral growth of composition graded bilayer MoS_{2(1–<i>x</i>)}Se_2<i>x</i> alloys along single triangular nanosheets by an improved chemical vapor deposition approach. From the center to the edge of the nanosheet, the composition can be gradually tuned from <i>x</i> = 0 (pure MoS₂) to <i>x</i> = 0.68, leading to the corresponding bandgap being continuously modulated from 1.82 eV (680 nm) to 1.64 eV (755 nm). Local photoluminescence scanning from the center to the edge gives single band edge emission peaks, indicating high crystalline quality for the achieved alloy nanosheets, which was further demonstrated by the microstructure characterizations. These novel 2D structures offer an interesting system for probing the physical properties of layered materials and exploring new applications in functional nanoelectronic and optoelectronic devices

Mobility Enhancement of Strained MoS₂ Transistor on Flat Substrate

Strain engineering has been proposed as a promising method to boost the carrier mobility of two-dimensional (2D) semiconductors. However, state-of-the-art straining approaches are largely based on putting 2D semiconductors on flexible substrates or rough substrate with nanostructures (e.g., nanoparticles, nanorods, ripples), where the observed mobility change is not only dependent on channel strain but could be impacted by the change of dielectric environment as well as rough interface scattering. Therefore, it remains an open question whether the pure lattice strain could improve the carrier mobilities of 2D semiconductors, limiting the achievement of high-performance 2D transistors. Here, we report a strain engineering approach to fabricate highly strained MoS2 transistors on a flat substrate. By mechanically laminating a prefabricated MoS2 transistor onto a custom-designed trench structure on flat substrate, well-controlled strain can be uniformly generated across the 2D channel. In the meantime, the substrate and the back-gate dielectric layer remain flat without any roughness-induced scattering effect or variation of the dielectric environment. Based on this technique, we demonstrate the MoS2 electron mobility could be enhanced by tension strain and decreased by compression strain, consistent with theoretical predictions. The highest mobility enhancement is 152% for monolayer MoS2 and 64% for bilayer MoS2 transistors, comparable to that of a silicon device. Our method not only provides a compatible approach to uniformly strain the layered semiconductors on flat and solid substrate but also demonstrates an effective method to boost the carrier mobilities of 2D transistors

Thickness-Tunable Synthesis of Ultrathin Type-II Dirac Semimetal PtTe₂ Single Crystals and Their Thickness-Dependent Electronic Properties

The recent discovery of topological semimetals has stimulated extensive research interest due to their unique electronic properties and novel transport properties related to a chiral anomaly. However, the studies to date are largely limited to bulk crystals and exfoliated flakes. Here, we report the controllable synthesis of ultrathin two-dimensional (2D) platinum telluride (PtTe₂) nanosheets with tunable thickness and investigate the thickness-dependent electronic properties. We show that PtTe₂ nanosheets can be readily grown, using a chemical vapor deposition approach, with a hexagonal or triangular geometry and a lateral dimension of up to 80 μm, and the thickness of the nanosheets can be systematically tailored from over 20 to 1.8 nm by reducing the growth temperature or increasing the flow rate of the carrier gas. X-ray-diffraction, transmission-electron microscopy, and electron-diffraction studies confirm that the resulting 2D nanosheets are high-quality single crystals. Raman spectroscopic studies show characteristics <i>E</i>_g and <i>A</i>_1g vibration modes at ∼109 and ∼155 cm^–1, with a systematic red shift with increasing nanosheet thickness. Electrical transport studies show the 2D PtTe₂ nanosheets display an excellent conductivity up to 2.5 × 10⁶ S m^–1 and show strong thickness-tunable electrical properties, with both the conductivity and its temperature dependence varying considerably with the thickness. Moreover, 2D PtTe₂ nanosheets show an extraordinary breakdown current density up to 5.7 × 10⁷ A/cm², the highest breakdown current density achieved in 2D metallic transition-metal dichalcogenides to date

Synthesis of WS_2<i>x</i>Se_{2–2<i>x</i>} Alloy Nanosheets with Composition-Tunable Electronic Properties

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently emerged as a new class of atomically thin semiconductors for diverse electronic, optoelectronic, and valleytronic applications. To explore the full potential of these 2D semiconductors requires a precise control of their band gap and electronic properties, which represents a significant challenge in 2D material systems. Here we demonstrate a systematic control of the electronic properties of 2D-TMDs by creating mixed alloys of the intrinsically p-type WSe₂ and intrinsically n-type WS₂ with variable alloy compositions. We show that a series of WS_2<i>x</i>Se_{2–2<i>x</i>} alloy nanosheets can be synthesized with fully tunable chemical compositions and optical properties. Electrical transport studies using back-gated field effect transistors demonstrate that charge carrier types and threshold voltages of the alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. A highly p-type behavior is observed in selenium-rich alloy, which gradually shifts to lightly p-type, and then switches to lightly n-type characteristics with the increasing sulfur atomic ratio, and eventually evolves into highly n-doped semiconductors in sulfur-rich alloys. The synthesis of WS_2<i>x</i>Se_{2–2<i>x</i>} nanosheets with tunable optical and electronic properties represents a critical step toward rational design of 2D electronics with tailored spectral responses and device characteristics

Growth of Alloy MoS_2<i>x</i>Se_{2(1–<i>x</i>)} Nanosheets with Fully Tunable Chemical Compositions and Optical Properties

Band gap engineering of atomically thin two-dimensional layered materials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, a simple one-step chemical vapor deposition approach for the simultaneous growth of alloy MoS_2<i>x</i>Se_{2(1–<i>x</i>)} triangular nanosheets with complete composition tunability. Both the Raman and the photoluminescence studies show tunable optical properties consistent with composition of the alloy nanosheets. Importantly, all samples show a single bandedge emission peak, with the spectral peak position shifting from 668 nm (for pure MoS₂) to 795 nm (for pure MoSe₂), indicating the high quality for these complete composition alloy nanosheets. These band gap engineered 2D structures could open up an exciting opportunity for probing their fundamental physical properties in 2D and may find diverse applications in functional electronic/optoelectronic devices

Highly Robust Room-Temperature Interfacial Ferromagnetism in Ultrathin Co₂Si Nanoplates

The reduced dimensionality and interfacial effects in magnetic nanostructures open the feasibility to tailor magnetic ordering. Here, we report the synthesis of ultrathin metallic Co2Si nanoplates with a total thickness that is tunable to 2.2 nm. The interfacial magnetism coupled with the highly anisotropic nanoplate geometry leads to strong perpendicular magnetic anisotropy and robust hard ferromagnetism at room temperature, with a Curie temperature (TC) exceeding 950 K and a coercive field (HC) > 4.0 T at 3 K and 8750 Oe at 300 K. Theoretical calculations suggest that ferromagnetism originates from symmetry breaking and undercoordinated Co atoms at the Co2Si and SiO2 interface. With protection by the self-limiting intrinsic oxide, the interfacial ferromagnetism of the Co2Si nanoplates exhibits excellent environmental stability. The controllable growth of ambient stable Co2Si nanoplates as 2D hard ferromagnets could open exciting opportunities for fundamental studies and applications in Si-based spintronic devices