43 research outputs found
Effect of tariff changes and export tax rebate on the optimal decision price.
Effect of tariff changes and export tax rebate on the optimal decision price.</p
Impact of tariff change and export tax rebate on the profit of the dual-channel supply chain.
Impact of tariff change and export tax rebate on the profit of the dual-channel supply chain.</p
The influence of random demand on the optimal decision price.
The influence of random demand on the optimal decision price.</p
Impact of random demand on dual-channel supply chain profits.
Impact of random demand on dual-channel supply chain profits.</p
The impact of random demand on dual-channel demand.
The impact of random demand on dual-channel demand.</p
Impact of tariff changes and export tax rebate on dual-channel demand.
Impact of tariff changes and export tax rebate on dual-channel demand.</p
Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe<sub>2</sub>P<sub>4</sub>–Metal Contacts
The
MoGe2P4 monolayer, an emerging semiconductor
with high carrier mobility, can be proposed as a promising channel
material in field effect transistors (FETs). The contact resistance
between MoGe2P4 and the metal electrode will
limit the performance of a realistic FET. Using density functional
theory (DFT) calculations, we explore the contact properties of a
MoGe2P4 monolayer with six bulk metal electrodes
(In, Ag, Au, Cu, Pd, and Pt). It is demonstrated that the Ohmic contacts
are formed in all MoGe2P4–metal contacts
due to the strong interfacial interactions, suggesting the high carrier
injection efficiency. In addition, the MoGe2P4–Cu, −Pd, and −Pt contacts present 100% tunneling
probability due to the absence of the tunneling barrier width. The
tunneling probabilities of the MGP–In, MGP–Ag, and MGP–Au
contacts are exceptionally higher than those of most other 2D semiconductors.
Moreover, the tunneling-specific resistivity of all MoGe2P4–metal contacts is relatively low, indicating
an ultralow contact resistance and excellent performance. These findings
provide a useful guideline to design high-performance MoGe2P4-based electronic devices
Liquid Chromatography–Tandem Mass Spectrometry Method Revealed that Lung Cancer Cells Exhibited Distinct Metabolite Profiles upon the Treatment with Different Pyruvate Dehydrogenase Kinase Inhibitors
Pyruvate
dehydrogenase kinases (PDKs) dominate the critical switch
between mitochondria-based respiration and cytoplasm-based glycolysis
by controlling pyruvate dehydrogenase (PDH) activity. Up-regulated
PDKs play a great role in the Warburg effect in cancer cells and accordingly
present a therapeutic target. Dichloroacetate (DCA) and AZD7545 are
the two most-well-known PDK inhibitors exhibiting distinct pharmacological
profiles. DCA showed anticancer effects in various preclinical models
and clinical studies, while the primary preclinical indication of
AZD7545 was on the improvement of glucose control in type II diabetes.
Little, if any, study has been undertaken the elucidation of the effects
of PDK inhibition on the metabolites in the tricarboxylic acid (TCA)
cycle. Herein, the metabolite alterations of lung cancer cells (A549)
upon the treatment with PDK inhibitors were studied using a reliable
liquid-chromatography-based tandem mass spectrometry method. The developed
method was validated for quantification of all common glycolysis and
TCA cycle catabolites with good sensitivity and reproducibility, including
glucose, pyruvate, lactate, acetyl coenzyme A, citrate, α-ketoglutarate,
fumarate, succinate, malate, and oxaloacetate. Our results suggested
that A549 cells exhibited distinct metabolite profiles following the
treatment with DCA or AZD7545, which may reflect the different pharmacological
indications of these two drugs
Semiconductor to Metal to Half-Metal Transition in Pt-Embedded Zigzag Graphene Nanoribbons
The electronic and magnetic properties
of Pt-embedded zigzag graphene nanoribbons (Pt–ZGNRs) are investigated
using density-functional theory calculations. It is found that Pt–ZGNRs
exhibit a semiconductor–metal–half-metal transition
as the position of Pt substitutional impurities in the ribbon changes
from the center to edge sites. This behavior can be attributed to
the interaction between Pt impurities and edge states of ZGNRs, which
governs the electron occupation of the edge states. The transition
always occurs independent of ribbon width. However, Pt impurity concentration
is important for obtaining this transition. Our results demonstrate
that Pt–ZGNRs can be used as versatile electronic devices
Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi<sub>2</sub>N<sub>4</sub> (M = Mo, W)/2D Metal Contacts
Monolayer MSi2N4 (M = Mo, W) has
been fabricated
and proposed as a promising channel material for field-effect transistors
(FETs) due to the high electron/hole mobility. However, the barrier
between the metal electrode and MSi2N4 will
affect device performance. Hence, it is desirable to reduce the barrier
for achieving high-performance electrical devices. Here, using density
functional theory (DFT) calculations, we systematically investigate
the electrical properties of the van der Waals (vdW) contacts formed
between MSi2N4 and two-dimensional (2D) metals
(XY2, X = Nb, Ta, Y = S, Se, Te). It is found that the
contact types and Schottky barrier height (SBH) of MSi2N4/XY2 can be effectively tuned by selecting
2D metals with different work functions (WFs). Specifically, n- and
p-type Schottky contacts and Ohmic contacts can be achieved in MSi2N4/XY2. Among them, MoSi2N4/H-NbS2, WSi2N4/H-XS2, and WSi2N4/H-NbSe2 present
Ohmic contacts due to the high WF of 2D metals. Notably, the pinning
factors of MSi2N4/XY2 are obviously
larger than those of the other 2D semiconductor/metal contacts, indicating
that the Fermi-level pinning (FLP) effect is weak in MSi2N4/XY2. Therefore, vdW stack engineering can
strongly weaken the FLP effect, making the Schottky barrier tunable
in MSi2N4/XY2 by choosing 2D metals
with different WFs. The results provide important insights into the
selection of appropriate electrodes and valuable guidance for the
development of MSi2N4-based 2D electronic devices
with high performance