Effect of tariff changes and export tax rebate on the optimal decision price.

Effect of tariff changes and export tax rebate on the optimal decision price.</p

Impact of tariff change and export tax rebate on the profit of the dual-channel supply chain.

Impact of tariff change and export tax rebate on the profit of the dual-channel supply chain.</p

The influence of random demand on the optimal decision price.

The influence of random demand on the optimal decision price.</p

Impact of random demand on dual-channel supply chain profits.

Impact of random demand on dual-channel supply chain profits.</p

The impact of random demand on dual-channel demand.

The impact of random demand on dual-channel demand.</p

Impact of tariff changes and export tax rebate on dual-channel demand.

Impact of tariff changes and export tax rebate on dual-channel demand.</p

Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe₂P₄–Metal Contacts

The MoGe2P4 monolayer, an emerging semiconductor with high carrier mobility, can be proposed as a promising channel material in field effect transistors (FETs). The contact resistance between MoGe2P4 and the metal electrode will limit the performance of a realistic FET. Using density functional theory (DFT) calculations, we explore the contact properties of a MoGe2P4 monolayer with six bulk metal electrodes (In, Ag, Au, Cu, Pd, and Pt). It is demonstrated that the Ohmic contacts are formed in all MoGe2P4–metal contacts due to the strong interfacial interactions, suggesting the high carrier injection efficiency. In addition, the MoGe2P4–Cu, −Pd, and −Pt contacts present 100% tunneling probability due to the absence of the tunneling barrier width. The tunneling probabilities of the MGP–In, MGP–Ag, and MGP–Au contacts are exceptionally higher than those of most other 2D semiconductors. Moreover, the tunneling-specific resistivity of all MoGe2P4–metal contacts is relatively low, indicating an ultralow contact resistance and excellent performance. These findings provide a useful guideline to design high-performance MoGe2P4-based electronic devices

Liquid Chromatography–Tandem Mass Spectrometry Method Revealed that Lung Cancer Cells Exhibited Distinct Metabolite Profiles upon the Treatment with Different Pyruvate Dehydrogenase Kinase Inhibitors

Pyruvate dehydrogenase kinases (PDKs) dominate the critical switch between mitochondria-based respiration and cytoplasm-based glycolysis by controlling pyruvate dehydrogenase (PDH) activity. Up-regulated PDKs play a great role in the Warburg effect in cancer cells and accordingly present a therapeutic target. Dichloroacetate (DCA) and AZD7545 are the two most-well-known PDK inhibitors exhibiting distinct pharmacological profiles. DCA showed anticancer effects in various preclinical models and clinical studies, while the primary preclinical indication of AZD7545 was on the improvement of glucose control in type II diabetes. Little, if any, study has been undertaken the elucidation of the effects of PDK inhibition on the metabolites in the tricarboxylic acid (TCA) cycle. Herein, the metabolite alterations of lung cancer cells (A549) upon the treatment with PDK inhibitors were studied using a reliable liquid-chromatography-based tandem mass spectrometry method. The developed method was validated for quantification of all common glycolysis and TCA cycle catabolites with good sensitivity and reproducibility, including glucose, pyruvate, lactate, acetyl coenzyme A, citrate, α-ketoglutarate, fumarate, succinate, malate, and oxaloacetate. Our results suggested that A549 cells exhibited distinct metabolite profiles following the treatment with DCA or AZD7545, which may reflect the different pharmacological indications of these two drugs

Semiconductor to Metal to Half-Metal Transition in Pt-Embedded Zigzag Graphene Nanoribbons

The electronic and magnetic properties of Pt-embedded zigzag graphene nanoribbons (Pt–ZGNRs) are investigated using density-functional theory calculations. It is found that Pt–ZGNRs exhibit a semiconductor–metal–half-metal transition as the position of Pt substitutional impurities in the ribbon changes from the center to edge sites. This behavior can be attributed to the interaction between Pt impurities and edge states of ZGNRs, which governs the electron occupation of the edge states. The transition always occurs independent of ribbon width. However, Pt impurity concentration is important for obtaining this transition. Our results demonstrate that Pt–ZGNRs can be used as versatile electronic devices

Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi₂N₄ (M = Mo, W)/2D Metal Contacts

Monolayer MSi2N4 (M = Mo, W) has been fabricated and proposed as a promising channel material for field-effect transistors (FETs) due to the high electron/hole mobility. However, the barrier between the metal electrode and MSi2N4 will affect device performance. Hence, it is desirable to reduce the barrier for achieving high-performance electrical devices. Here, using density functional theory (DFT) calculations, we systematically investigate the electrical properties of the van der Waals (vdW) contacts formed between MSi2N4 and two-dimensional (2D) metals (XY2, X = Nb, Ta, Y = S, Se, Te). It is found that the contact types and Schottky barrier height (SBH) of MSi2N4/XY2 can be effectively tuned by selecting 2D metals with different work functions (WFs). Specifically, n- and p-type Schottky contacts and Ohmic contacts can be achieved in MSi2N4/XY2. Among them, MoSi2N4/H-NbS2, WSi2N4/H-XS2, and WSi2N4/H-NbSe2 present Ohmic contacts due to the high WF of 2D metals. Notably, the pinning factors of MSi2N4/XY2 are obviously larger than those of the other 2D semiconductor/metal contacts, indicating that the Fermi-level pinning (FLP) effect is weak in MSi2N4/XY2. Therefore, vdW stack engineering can strongly weaken the FLP effect, making the Schottky barrier tunable in MSi2N4/XY2 by choosing 2D metals with different WFs. The results provide important insights into the selection of appropriate electrodes and valuable guidance for the development of MSi2N4-based 2D electronic devices with high performance