Prognostic factors in lumbar spinal stenosis surgery. A prospective study of imaging- and patient-related factors in 109 patients who were operated on by decompression

Background and purpose A considerable number of patients who undergo surgery for spinal stenosis have residual symptoms and inferior function and health-related quality of life after surgery. There have been few studies on factors that may predict outcome. We tried to find predictors of outcome in surgery for spinal stenosis using patient- and imaging-related factors. Patients and methods 109 patients in the Swedish Spine Register with central spinal stenosis that were operated on by decompression without fusion were prospectively followed up 1 year after surgery. Clinical outcome scores included the EQ-5D, the Oswestry disability index, self-estimated walking distance, and leg and back pain levels (VAS). Central dural sac area, number of levels with stenosis, and spondylolisthesis were included in the MRI analysis. Multivariable analyses were performed to search for correlation between patient-related and imaging factors and clinical outcome at 1-year follow-up. Results Several factors predicted outcome statistically significantly. Duration of leg pain exceeding 2 years predicted inferior outcome in terms of leg and back pain, function, and HRLQoL. Regular and intermittent preoperative users of analgesics had higher levels of back pain at follow-up than those not using analgesics. Low preoperative function predicted low function and dissatisfaction at follow-up. Low preoperative EQ-5D scores predicted a high degree of leg and back pain. Narrow dural sac area predicted more gains in terms of back pain at follow-up and lower absolute leg pain. Interpretation Multiple factors predict outcome in spinal stenosis surgery, most importantly duration of symptoms and preoperative function. Some of these are modifiable and can be targeted. Our findings can be used in the preoperative patient information and aid the surgeon and the patient in a shared decision making process

Design and Analysis of Nanotube-Based Memory Cells

In this paper, we proposed a nanoelectromechanical design as memory cells. A simple design contains a double-walled nanotube-based oscillator. Atomistic materials are deposed on the outer nanotube as electrodes. Once the WRITE voltages are applied on electrodes, the induced electromagnetic force can overcome the interlayer friction between the inner and outer tubes so that the oscillator can provide stable oscillations. The READ voltages are employed to indicate logic 0/1 states based on the position of the inner tube. A new continuum modeling is developed in this paper to analyze large models of the proposed nanoelectromechanical design. Our simulations demonstrate the mechanisms of the proposed design as both static and dynamic random memory cells

Multiscale modeling and simulation of nanotube-based torsional oscillators

In this paper, we propose the first numerical study of nanotube-based torsional oscillators via developing a new multiscale model. The edge-to-edge technique was employed in this multiscale method to couple the molecular model, i.e., nanotubes, and the continuum model, i.e., the metal paddle. Without losing accuracy, the metal paddle was treated as the rigid body in the continuum model. Torsional oscillators containing (10,0) nanotubes were mainly studied. We considered various initial angles of twist to depict linear/nonlinear characteristics of torsional oscillators. Furthermore, effects of vacancy defects and temperature on mechanisms of nanotube-based torsional oscillators were discussed

Dielectric functions and electronic band structure of lead zirconate titanate thin films

We measure pseudodielectric functions in the visible-deep ultraviolet spectral range of Pb(ZrxTi1−x)O3 (x=0.2,0.56,0.82) (PZT), Pb0.98Nb0.04 (Zr0.2Ti0.8)0.96O3, Pb0.91La0.09 (Zr0.65Ti0.35)0.98O3, and Pb0.85La0.15Ti0.96O3 films grown on platinized silicon substrates using a sol-gel method and on (0001) sapphire using a radio-frequency sputtering method. Using a parametric optical constant model, we estimate the dielectric functions(ϵ) of the perovskite oxide thin films. Taking the second derivative of the fitted layer dielectric functions and using the standard critical-point model, we determine the parameters of the critical points. In the second derivative spectra, the lowest band-gapenergy peak near 4 eVis fitted as a double peak for annealed PZTs due to the perovskite phase. As-grown PZTs have mainly pyrochlore phase and the lowest band-gap peak is fitted as a single peak. We also examine the effect of dopants La and Nb, which substitute at Pb and Zr (Ti) sites, respectively. We found three band gaps Ea(∼3.9eV), Eb (∼4.5eV), and Ec (∼6.5eV) in the order of increasing energy. The Ea and Eb band-gap energies were not sensitive to Zr composition. We discuss the change of critical-point parameters for PZTs in comparison to the band-structure calculations based on local-density approximation. The near constancy of the lowest band-gap energy independent of Zr composition is consistent with the band-structure calculations

Generalized McKay quivers of rank three

For each finite subgroup G of SL(n, C), we introduce the generalized Cartan matrix C_{G} in view of McKay correspondence from the fusion rule of its natural representation. Using group theory, we show that the generalized Cartan matrices have similar favorable properties such as positive semi-definiteness as in the classical case of affine Cartan matrices (the case of SL(2,C)). The complete McKay quivers for SL(3,C) are explicitly described and classified based on representation theory