Penetration Depth Measurements in MgB_2: Evidence for Unconventional Superconductivity

We have measured the magnetic penetration depth of the recently discovered binary superconductor MgB_2 using muon spin rotation and low field $ac$-susceptibility. From the damping of the muon precession signal we find the penetration depth at zero temperature is about 85nm. The low temperature penetration depth shows a quadratic temperature dependence, indicating the presence of nodes in the superconducting energy gap.Comment: 4 pages 3 figure

Holonomic quantum gates: A semiconductor-based implementation

We propose an implementation of holonomic (geometrical) quantum gates by means of semiconductor nanostructures. Our quantum hardware consists of semiconductor macroatoms driven by sequences of ultrafast laser pulses ({\it all optical control}). Our logical bits are Coulomb-correlated electron-hole pairs (excitons) in a four-level scheme selectively addressed by laser pulses with different polarization. A universal set of single and two-qubit gates is generated by adiabatic change of the Rabi frequencies of the lasers and by exploiting the dipole coupling between excitons.Comment: 10 Pages LaTeX, 10 Figures include

Long-distant contribution and χc1\chi_{c1} radiative decays to light vector meson

The discrepancy between the PQCD calculation and the CLEO data for $\chi_{c1}\to \gamma V$ ($V=\rho^0,\,\omega,\,\phi$) stimulates our interest in exploring extra mechanism of $\chi_{c1}$ decay. In this work, we apply an important non-perturbative QCD effect, i.e., hadronic loop mechanism, to study $\chi_{c1}\to \gamma V$ radiative decay. Our numerical result shows that the theoretical results including the hadronic loop contribution and the PQCD calculation of $\chi_{c1}\to \gamma V$ are consistent with the corresponding CLEO data of $\chi_{c1}\to \gamma V$. We expect further experimental measurement of $\chi_{c1}\to \gamma V$ at BES-III, which will be helpful to test the hadronic loop effect on $\chi_{c1}$ decay.Comment: 7 pages, 2 figures. Accepted for publication in Eur. Phys. J.

Quantum optics in the phase space - A tutorial on Gaussian states

In this tutorial, we introduce the basic concepts and mathematical tools needed for phase-space description of a very common class of states, whose phase properties are described by Gaussian Wigner functions: the Gaussian states. In particular, we address their manipulation, evolution and characterization in view of their application to quantum information.Comment: Tutorial. 23 pages, 1 figure. Updated version accepted for publication in EPJ - ST devoted to the memory of Federico Casagrand

Semileptonic decays of Bs1B_{s1}, Bs2∗B_{s2}^*, Bs0B_{s0} and Bs1′B_{s1}'

Stimulated by recent observations of the excited bottom-strange mesons $B_{s1}$ and $B_{s2}^*$, we calculate the semileptonic decays $B_{s0}, B_{s1}^{\prime}, B_{s1}, B_{s2}^*\to [D_s(1968), D_{s}^*(2112), D_{sJ}(2317), D_{sJ}(2460)]\ell\bar{\nu}$, which is relevant for the exploration of the potential of searching these semileptonic decays in experiment.Comment: 11 pages, 3 figures, 9 tables. More discussion added, some descriptions changed. The version to appear in EPJ

Electron Dynamics in Nd1.85_{1.85}Ce.15_{.15}CuO4+δ_{4+\delta}: Evidence for the Pseudogap State and Unconventional c-axis Response

Infrared reflectance measurements were made with light polarized along the a- and c-axis of both superconducting and antiferromagnetic phases of electron doped Nd$_{1.85}$Ce$_{.15}$CuO$_{4+\delta}$. The results are compared to characteristic features of the electromagnetic response in hole doped cuprates. Within the CuO$_2$ planes the frequency dependent scattering rate, 1/$\tau(\omega)$, is depressed below $\sim$ 650 cm$^{-1}$; this behavior is a hallmark of the pseudogap state. While in several hole doped compounds the energy scales associated with the pseudogap and superconducting states are quite close, we are able to show that in Nd$_{1.85}$Ce$_{.15}$CuO$_{4+\delta}$ the two scales differ by more than one order of magnitude. Another feature of the in-plane charge response is a peak in the real part of the conductivity, $\sigma_1(\omega)$, at 50-110 cm$^{-1}$ which is in sharp contrast with the Drude-like response where $\sigma_1(\omega)$ is centered at $\omega=0$. This latter effect is similar to what is found in disordered hole doped cuprates and is discussed in the context of carrier localization. Examination of the c-axis conductivity gives evidence for an anomalously broad frequency range from which the interlayer superfluid is accumulated. Compelling evidence for the pseudogap state as well as other characteristics of the charge dynamics in Nd$_{1.85}$Ce$_{.15}$CuO$_{4+\delta}$ signal global similarities of the cuprate phase diagram with respect to electron and hole doping.Comment: Submitted to PR

Producing the event ready two photon polarization EPR state with linear optics devices

We propose a scheme to produce the maximally two photon polarization entangled state(EPR state) with single photon sources and the linear optics devices. In particular, our scheme requires the photon detectors only to distinguish the vacuum and non-vacuum Fock number states. A sophisticated photon detector distinguishing one or two photon states is unnecessary.Comment: Published in Phys. Rev. A alread

Quantum error rejection code with spontaneous parametric conversion

We propose a linear optics scheme with SPDC process to test the fault tolerance property of quantum error correction code. To transmit an unknown qubit robustly through the noisy channel, one may first encode it into a certain quantum error correction code and then transmit it. The remote party decodes it and stores it. Sending a qubit in such a way can significantly reduces the error rate compared with directly sending the qubit itself. Here we show how to realize such a scheme by linear optics.Comment: To appear in Phys. Rev. A. 18 pages, 2 figure, minor erros corrected and more explanations added to increase the readabilit

Design and modeling of a transistor vertical-cavity surface-emitting laser

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps