Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates was investigated. The GaN epilayers grown with plasma-assisted molecular-beam epitaxy were optically characterized by photoluminescence and excitation spectra. Results showed that the localized states which were induced by the structural defect located about 100 meV above the maximum valence band of GaN.published_or_final_versio

Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states

Heterostructures of n-GaNn-6H-SiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. Using different contact configurations, the I-V results reveal a rectifying barrier in the n-GaNn-6H-SiC heterostructures. When GaN is negatively biased, the current is exponentially proportional to the applied voltage with the built-in barrier being 0.4-1.1 eV for the HVPE samples and 0.5 eV for the MBE sample. DLTS measurements reveal intense band-like deep level states in the interfacial region of the heterostructure, and the Fermi-level pinning by these deep level defects is invoked to account for the interfacial rectifying barrier of the heterostructures. © 2005 American Institute of Physics.published_or_final_versio

Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion

A low-energy electron diffraction (LEED) Patterson function (PF) with multiple incident angles is used to obtain three-dimensional interatomic information of hexagonal GaN(0001) grown on a 6H-SiC(0001)-√3 x √3 surface. A Ga-Ga atomic pair between the Ga adlayer and the terminating Ga layer is observed in the LEED PF. This provides direct experimental evidence to support the structural model proposed by first-principles calculations. The LEED PF also shows that the GaN film has a hexagonal structure and the surface has single-bilayer steps.published_or_final_versio

In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.published_or_final_versio

Molecular-beam Epitaxy of Monolayer MoSe2: Growth Characteristics and Domain Boundary Formation

published_or_final_versio

Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy

High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.postprin

Effect of laser remelting on microstructure and properties of WC reinforced Fe-based amorphous composite coatings by laser cladding

The WC reinforced Fe-based amorphous composite coatings were prepared by laser cladding with rectangular spot. The effect of laser remelting on the microstructure and properties of composite coatings was investigated. The results showed that laser remelting can reduce the cracks and porosities of the cladding coating and improve its surface quality. Large amounts of crystalline phases were precipitated at the top of the cladding and remelting coatings. However, the microstructure at the top of the remelting coating was finer compared to that at the top of the cladding coating. With increasing distance from the surface of substrate, the amorphous phase appeared within the remelting coating and large amounts of carbides rich in Fe and Mo, Fe23B6, gamma-Fe and Cr-9.1.Si-0.9 Slag phases were also precipitated in the remelting coating. As a result, the corrosion resistance of the remelting coating was higher than that of the cladding coating. The microhardness of the remelting coating was approximately 1.13 times higher than that of the cladding coating. (C) 2018 Elsevier Ltd. All rights reserved

Search for K_S K_L in psi'' decays

K_S K_L from psi'' decays is searched for using the psi'' data collected by BESII at BEPC, the upper limit of the branching fraction is determined to be B(psi''--> K_S K_L) < 2.1\times 10^{-4} at 90% C. L. The measurement is compared with the prediction of the S- and D-wave mixing model of the charmonia, based on the measurements of the branching fractions of J/psi-->K_S K_L and psi'-->K_S K_L.Comment: 5 pages, 1 figur

Two-photon dual imaging platform for in vivo monitoring cellular oxidative stress in liver injury

Oxidative stress reflects an imbalance between reactive oxygen species (ROS) and antioxidants, which has been reported as an early unifying event in the development and progression of various diseases and as a direct and mechanistic indicator of treatment response. However, highly reactive and short-lived nature of ROS and antioxidant limited conventional detection agents, which are influenced by many interfering factors. Here, we present a two-photon sensing platform for in vivo dual imaging of oxidative stress at the single cell-level resolution. This sensing platform consists of three probes, which combine the turn-on fluorescent transition-metal complex with different specific responsive groups for glutathione (GSH), hydrogen peroxide (H2O2) and hypochlorous acid (HOCl). By combining fluorescence intensity imaging and fluorescence lifetime imaging, these probes totally remove any possibility of crosstalk from in vivo environmental or instrumental factors, and enable accurate localization and measurement of the changes in ROS and GSH within the liver. This precedes changes in conventional biochemical and histological assessments in two distinct experimental murine models of liver injury. The ability to monitor real-time cellular oxidative stress with dual-modality imaging has significant implications for high-accurate, spatially configured and quantitative assessment of metabolic status and drug response