1,744 research outputs found
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
Three-dimensional (3D) topological insulators (TI) are novel quantum
materials with insulating bulk and topologically protected metallic surfaces
with Dirac-like band structure. The spin-helical Dirac surface states are
expected to host exotic topological quantum effects and find applications in
spintronics and quantum computation. The experimental realization of these
ideas requires fabrication of versatile devices based on bulk-insulating TIs
with tunable surface states. The main challenge facing the current TI materials
exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which
remains unsolved despite extensive efforts involving nanostructuring, chemical
doping and electrical gating. Here we report a novel approach for engineering
the band structure of TIs by molecular beam epitaxy (MBE) growth of
(Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy
(ARPES) and transport measurements show that the topological surface states
exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1),
indicating the robustness of bulk Z2 topology. Most remarkably, the systematic
band engineering leads to ideal TIs with truly insulating bulk and tunable
surface state across the Dirac point that behave like one quarter of graphene.
This work demonstrates a new route to achieving intrinsic quantum transport of
the topological surface states and designing conceptually new TI devices with
well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information
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铁转运刺激因子研究进展
2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
膜铁转运蛋白Ferroportin1的研究进展
2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
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2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
Effects of swim training on the expression of gastrocnemius’ iron transport proteins in rats
2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
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Orbital textures and charge density waves in transition metal dichalcogenides
Low-dimensional electron systems, as realized naturally in graphene or
created artificially at the interfaces of heterostructures, exhibit a variety
of fascinating quantum phenomena with great prospects for future applications.
Once electrons are confined to low dimensions, they also tend to spontaneously
break the symmetry of the underlying nuclear lattice by forming so-called
density waves; a state of matter that currently attracts enormous attention
because of its relation to various unconventional electronic properties. In
this study we reveal a remarkable and surprising feature of charge density
waves (CDWs), namely their intimate relation to orbital order. For the
prototypical material 1T-TaS2 we not only show that the CDW within the
two-dimensional TaS2-layers involves previously unidentified orbital textures
of great complexity. We also demonstrate that two metastable stackings of the
orbitally ordered layers allow to manipulate salient features of the electronic
structure. Indeed, these orbital effects enable to switch the properties of
1T-TaS2 nanostructures from metallic to semiconducting with technologically
pertinent gaps of the order of 200 meV. This new type of orbitronics is
especially relevant for the ongoing development of novel, miniaturized and
ultra-fast devices based on layered transition metal dichalcogenides
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