Spin dynamics in the strong spin-orbit coupling regime

We study the spin dynamics in a high-mobility two dimensional electron gas (2DEG) with generic spin-orbit interactions (SOIs). We derive a set of spin dynamic equations which capture the purely exponential to the damped oscillatory spin evolution modes observed in different regimes of SOI strength. Hence we provide a full treatment of the D'yakonov-Perel's mechanism by using the microscopic linear response theory from the weak to the strong SOI limit. We show that the damped oscillatory modes appear when the electron scattering time is larger than half of the spin precession time due to the SOI, in agreement with recent observations. We propose a new way to measure the scattering time and the relative strength of Rashba and linear Dresselhaus SOIs based on these modes and optical grating experiments. We discuss the physical interpretation of each of these modes in the context of Rabi oscillation.Comment: 8 pages, 9 figure

Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model

2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences (e.g. ABAB, ABCABC), leading to different physical properties. Here, we show that regardless of the space group of the 2D material, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials.Comment: 30 pages, 8 figure