Microstructure of the deep level defect E1/E2 in 6H silicon carbide (Abstract)

published_or_final_versio

Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC (Abstract)

published_or_final_versio

Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

A study of neutron-irradiated n-type 6H-SiC using deep level transient spectroscopy was presented. 100- 1600°C isochronal annealing was performed on the as-irradiated samples with each of the annealing steps to investigate the thermal annealing behavior. Thermal generation of deep levels NE1- NE4 at annealing temperatures above 1400°C was observed.published_or_final_versio

A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed. © 2000 American Institute of Physics.published_or_final_versio

Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide

Deep level defects E1 E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n -type 6H-SiC. Similar to others' results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E1 E2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E1 E2. The activation energy and the capture cross section of this defect are EC -0.31 eV and σ∼8× 10-14 cm2, respectively. © 2005 American Institute of Physics.published_or_final_versio

Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation

6H-SiC samples subjected to He-implantation and e--irradiation (Ee=0.2MeV-1.7MeV) were investigated by deep level transient spectroscopy (DLTS). E1/E2 were identified in the He-implanted and the e--irradiated samples with Ee≥0. 3MeV. Considering the minimum e- energy required to displace the atoms in the lattice, the E1/E2 creation was related to the C-atom displacement. Similar to previous reports, the peak intensity and the capture cross sections of E1/E2 anomalously varies from samples to samples. It was shown that these anomalies were due to the presence of a DLTS peak overlapping with the E1/E2 signals. © 2005 American Institute of Physics.published_or_final_versio

Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.published_or_final_versio

Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2

The deep level defects in 6H-SiC induced by low energy electron irradiation was investigated. Electron energies of 0.2, 0.3, 0.5 and 1.7 MeV were used to produce the deep level defects in the n-type 6H-SiC materials. The deep level transient spectroscopy (DLTS) technique, combined with isochronal thermal annealing experiments, was used for the study of the defects. It was observed that deep levels ED1, E1/E2 and Ei were created with irradiation energies of 0.3 MeV or greater than that. The deep levels were found to be associated with primary atom displacement on the C atom of SiC sublattice and had microstructure containing the carbon vacancy.published_or_final_versio

Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP

The concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.published_or_final_versio

Structural and electrical properties of beryllium implanted silicon carbide

Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.published_or_final_versio