Phonon-drag effects on thermoelectric power

We carry out a calculation of the phonon-drag contribution $S_g$ to the thermoelectric power of bulk semiconductors and quantum well structures for the first time using the balance equation transport theory extended to the weakly nonuniform systems. Introducing wavevector and phonon-mode dependent relaxation times due to phonon-phonon interactions, the formula obtained can be used not only at low temperatures where the phonon mean free path is determined by boundary scattering, but also at high temperatures. In the linear transport limit, $S_g$ is equivalent to the result obtained from the Boltzmann equation with a relaxation time approximation. The theory is applied to experiments and agreement is found between the theoretical predictions and experimental results. The role of hot-electron effects in $S_g$ is discussed. The importance of the contribution of $S_g$ to thermoelectric power in the hot-electron transport condition is emphasized.Comment: 8 pages, REVTEX 3.0, 7 figures avilable upon reques

Self-induced and induced transparencies of two-dimensional and three- dimensional superlattices

The phenomenon of transparency in two-dimensional and three-dimensional superlattices is analyzed on the basis of the Boltzmann equation with a collision term encompassing three distinct scattering mechanisms (elastic, inelastic and electron-electron) in terms of three corresponding distinct relaxation times. On this basis, we show that electron heating in the plane perpendicular to the current direction drastically changes the conditions for the occurrence of self-induced transparency in the superlattice. In particular, it leads to an additional modulation of the current amplitudes excited by an applied biharmonic electric field with harmonic components polarized in orthogonal directions. Furthermore, we show that self-induced transparency and dynamic localization are different phenomena with different physical origins, displaced in time from each other, and, in general, they arise at different electric fields.Comment: to appear in Physical Review

Oscillatory nonlinear differential magnetoresistance of highly mobile 2D electrons in high Landau levels

We examine the current-induced magnetoresistance oscillations in high-mobility two-dimensional electron systems using the balance-equation scheme for nonlinear magnetotransort. The reported analytical expressions for differential magnetoresistivity at high filling factors in the overlapping Landau-level regime, which show good agreement with the experimental observation and the numerical calculation, may be helpful in extracting physical information from experiments.Comment: 4 pages, 2 figure

Thermoelectric power of nondegenerate Kane semiconductors under the conditions of mutual electron-phonon drag in a high electric field

The thermoelectric power of nondegenerate Kane semiconductors with due regard for the electron and phonon heating, and their thermal and mutual drags is investigated. The electron spectrum is taken in the Kane two-band form. It is shown that the nonparabolicity of electron spectrum significantly influences the magnitude of the thermoelectric power and leads to a change of its sign and dependence on the heating electric field. The field dependence of the thermoelectric power is determined analytically under various drag conditions.Comment: 25 pages, RevTex formatted, 3 table

Generalized drift-diffusion model for miniband superlattices

A drift-diffusion model of miniband transport in strongly coupled superlattices is derived from the single-miniband Boltzmann-Poisson transport equation with a BGK (Bhatnagar-Gross-Krook) collision term. We use a consistent Chapman-Enskog method to analyze the hyperbolic limit, at which collision and electric field terms dominate the other terms in the Boltzmann equation. The reduced equation is of the drift-diffusion type, but it includes additional terms, and diffusion and drift do not obey the Einstein relation except in the limit of high temperatures.Comment: 4 pages, 3 figures, double-column revtex. To appear as RC in PR

Ac-cotunneling through an interacting quantum dot under a magnetic field

We analyze inelastic cotunneling through an interacting quantum dot subject to an ambient magnetic field in the weak tunneling regime under a non-adiabatic time-dependent bias-voltage. Our results clearly exhibit photon-assisted satellites and an overall suppression of differential conductance with increasing driving amplitude, which is consistent with experiments. We also predict a zero-anomaly in differential conductance under an appropriate driving frequency.Comment: Phys. Lett. A (in press

Elementary operations for quantum logic with a single trapped two-level cold ion beyond Lamb-Dicke limit

A simple alternative scheme for implementing quantum gates with a single trapped cold two-level ion beyond the Lamb-Dicke (LD) limit is proposed. Basing on the quantum dynamics for the laser-ion interaction described by a generalized Jaynes-Cummings model, one can introduce two kinds of elementary quantum operations i.e., the simple rotation on the bare atomic state, generated by applying a resonant pulse, and the joint operation on the internal and external degrees of the ion, performed by using an off-resonant pulse. Several typical quantum gates, including Hadamard gate, controlled-Z and controlled-NOT gates $etc.$, can thus be implemented exactly by using these elementary operations. The experimental parameters including the LD parameter and the durations of the applied laser pulses, for these implementation are derived analytically and numerically. Neither the LD approximation for the laser-ion interaction nor the auxiliary atomic level is needed in the present scheme.Comment: 5 pages, no figure, to appear in Opt. Com

Frictional drag between non-equilibrium charged gases

The frictional drag force between separated but coupled two-dimensional electron gases of different temperatures is studied using the non-equilibrium Green function method based on the separation of center-of-mass and relative dynamics of electrons. As the mechanisms of producing the frictional force we include the direct Coulomb interaction, the interaction mediated via virtual and real TA and LA phonons, optic phonons, plasmons, and TA and LA phonon-electron collective modes. We found that, when the distance between the two electron gases is large, and at intermediate temperature where plasmons and collective modes play the most important role in the frictional drag, the possibility of having a temperature difference between two subsystems modifies greatly the transresistivity.Comment: 8figure

Hot air drying characteristics and nutrients of apricot armeniaca vulgaris lam pretreated with Radio Frequency(RF)

[EN] Apricot pretreated with RF and then dried with convective hot air at 65℃, 3.0m/s in this research. RF pretreatment time of 20, 30, 40 and 50min were chosen. Results showed that, there is only falling rate period during apricot hot air drying, and the drying rate of apricot is improved significantly; Herdenson and Pabis model is suitable for apricot hot air drying; retentions of flavonoids, polyphenols and Vc in dried apricot were higher than those of fresh apricot; when RF treating time was chosen 30mins, nutrients retentions of Vc, flavonoid and polyphenols were 0.9543mg/100g, 5.4089mg/100g and 7.3382mg/100g, separately.The work was financially supported by the Fundamental Research Funds for the Central Universities of China (NO. GK201503072 and GK201601007).Peng, M.; Liu, J.; Lei, Y.; Yang, X.; Wu, Z.; Huang, X. (2018). Hot air drying characteristics and nutrients of apricot armeniaca vulgaris lam pretreated with Radio Frequency(RF). En IDS 2018. 21st International Drying Symposium Proceedings. Editorial Universitat Politècnica de València. 1583-1590. https://doi.org/10.4995/IDS2018.2018.7524OCS1583159

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.Comment: 4 pages text, 4 color figure