Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor

A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths. The model is then improved to account for depletion and the width of the two-dimensional electron gases. The results are then compared to the experimental ones and to some approximate analytical calculations and are found to be in good agreement with them.Comment: 16 pages, LaTex (RevTex), 8 fig

Spin and orbital moments of ultra-thin Fe films on various semiconductor surfaces

The magnetic moments of ultrathin Fe films on three different III-V semiconductor substrates, namely GaAs, InAs and In0.2Ga0.8As have been measured with X-ray magnetic circular dichroism at room temperature to assess their relative merits as combinations suitable for next-generation spintronic devices. The results revealed rather similar spin moments and orbital moments for the three systems, suggesting the relationship between film and semiconductor lattice parameters to be less critical to magnetic moments than magnetic anisotropy