Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor

A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths. The model is then improved to account for depletion and the width of the two-dimensional electron gases. The results are then compared to the experimental ones and to some approximate analytical calculations and are found to be in good agreement with them.Comment: 16 pages, LaTex (RevTex), 8 fig

Spin-flip noise due to nonequilibrium spin accumulation

When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aI\coth(\frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.Comment: 6 pages, 5 figure

Spin and orbital moments of ultra-thin Fe films on various semiconductor surfaces

The magnetic moments of ultrathin Fe films on three different III-V semiconductor substrates, namely GaAs, InAs and In0.2Ga0.8As have been measured with X-ray magnetic circular dichroism at room temperature to assess their relative merits as combinations suitable for next-generation spintronic devices. The results revealed rather similar spin moments and orbital moments for the three systems, suggesting the relationship between film and semiconductor lattice parameters to be less critical to magnetic moments than magnetic anisotropy

Antiviral treatment alters the frequency of activating and inhibitory receptor-expressing natural killer cells in chronic Hepatitis B virus infected patients

Natural killer (NK) cells play a critical role in innate antiviral immunity, but little is known about the impact of antiviral therapy on the frequency of NK cell subsets. To this aim, we performed this longitudinal study to examine the dynamic changes of the frequency of different subsets of NK cells in CHB patients after initiation of tenofovir or adefovir therapy. We found that NK cell numbers and subset distribution differ between CHB patients and normal subjects; furthermore, the association was found between ALT level and CD158b+ NK cell in HBV patients. In tenofovir group, the frequency of NK cells increased during the treatment accompanied by downregulated expression of NKG2A and KIR2DL3. In adefovir group, NK cell numbers did not differ during the treatment, but also accompanied by downregulated expression of NKG2A and KIR2DL3. Our results demonstrate that treatment with tenofovir leads to viral load reduction, and correlated with NK cell frequencies in peripheral blood of chronic hepatitis B virus infection. In addition, treatments with both tenofovir and adefovir in chronic HBV infected patients induce a decrease of the frequency of inhibitory receptor+ NK cells, which may account for the partial restoration of the function of NK cells in peripheral blood following treatment

Angle-resolved Photoemission Spectroscopy Study on the Surface States of the Correlated Topological Insulator YbB6

We report the electronic structure of YbB6, a recently predicted moderately correlated topological insulator, measured by angle-resolved photoemission spectroscopy. We directly observed linearly dispersive bands around the time-reversal invariant momenta {\Gamma} and X with negligible kz dependence, consistent with odd number of surface states crossing the Fermi level in a Z2 topological insulator. Circular dichroism photoemission spectra suggest that these in-gap states possess chirality of orbital angular momentum, which is related to the chiral spin texture, further indicative of their topological nature. The observed insulating gap of YbB6 is about 100 meV, larger than that reported by theoretical calculations. Our results present strong evidence that YbB6 is a correlated topological insulator and provide a foundation for further studies of this promising material.Comment: 5 pages, 4 figure

Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field

The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show that the electron-spin relaxation is clearly divided into two different temperature regimes: (i) T < 50 K, spin relaxation depends on the dynamical nuclear spin polarization (DNSP) and is approximately temperature-independent, as predicted by Merkulov et al. (ii) T > about 50 K, spin relaxation speeds up with increasing temperature. A model of two LO phonon scattering process coupled with hyperfine interaction is proposed to account for the accelerated electron spin relaxation at higher temperatures.Comment: 10 pages, 4 figure