Live Poultry Exposure and Public Response to Influenza A(H7N9) in Urban and Rural China during Two Epidemic Waves in 2013-2014

Background The novel influenza A(H7N9) virus has caused 2013 spring and 2013-2014 winter waves of human infections since its first emergence in China in March 2013. Exposure to live poultry is a risk factor for H7N9 infection. Public psychobehavioral responses often change during progression of an epidemic. Methods We conducted population-based surveys in southern China to examine human exposure to live poultry, and population psychological response and behavioral changes in the two waves. In Guangzhou, an urban area of Guangdong province, we collected data using telephone surveys with random digit dialing in May-June 2013 and again in December 2013 to January 2014. In Zijin county, a rural area of the same province, we used door-to-door surveys under a stratified sampling design in July 2013 and again in December 2013 to January 2014. All responses were weighted by age and sex to the respective adult populations. Findings Around half of the urban respondents (53.8%) reported having visited LPMs in the previous year in the first survey, around double that reported in the second survey (27.7%). In the rural surveys, around half of the participants reported raising backyard poultry in the past year in the first survey, increasing to 83.2% participants in the second survey. One third of urban subjects supported the permanent closure of LPMs in the first and second surveys, and factors associated with support for closure included female sex, higher level of worry towards H7N9, and worry induced by a hypothetical influenza-like illness. Conclusions Our study indicated high human exposure to live poultry and low support for permanent closure of markets in both urban and rural residents regardless of increased worry during the epidemic.published_or_final_versio

Formation of diluted III–V nitride thin films by N ion implantation

iluted III–Nₓ–V₁ˍₓ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nₓ–V₁ˍₓ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNₓAs1−x and InNₓP₁ˍₓalloys. In GaNₓAs₁ˍₓ the highest value of x (fraction of “active” substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNₓP₁ˍₓ was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implantedInNₓP₁ˍₓ was at least a factor of 2 higher than that in GaNₓAs₁ˍₓ under similar processing conditions. AlyGa1−yNₓAs₁ˍₓ had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNₓAs₁ˍₓalloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.This work was supported by the ‘‘Photovoltaic Materials Focus Area’’ in the DOE Center of Excellence for the Synthesis and Processing of Advanced Materials, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported by Midwest Research Institute under subcontractor No. AAD-9-18668-7 from NREL