Real-time hierarchically distributed processing network interaction simulation

The Telerobot Testbed is a hierarchically distributed processing system which is linked together through a standard, commercial Ethernet. Standard Ethernet systems are primarily designed to manage non-real-time information transfer. Therefore, collisions on the net (i.e., two or more sources attempting to send data at the same time) are managed by randomly rescheduling one of the sources to retransmit at a later time interval. Although acceptable for transmitting noncritical data such as mail, this particular feature is unacceptable for real-time hierarchical command and control systems such as the Telerobot. Data transfer and scheduling simulations, such as token ring, offer solutions to collision management, but do not appropriately characterize real-time data transfer/interactions for robotic systems. Therefore, models like these do not provide a viable simulation environment for understanding real-time network loading. A real-time network loading model is being developed which allows processor-to-processor interactions to be simulated, collisions (and respective probabilities) to be logged, collision-prone areas to be identified, and network control variable adjustments to be reentered as a means of examining and reducing collision-prone regimes that occur in the process of simulating a complete task sequence

On the rooted Tutte polynomial

The Tutte polynomial is a generalization of the chromatic polynomial of graph colorings. Here we present an extension called the rooted Tutte polynomial, which is defined on a graph where one or more vertices are colored with prescribed colors. We establish a number of results pertaining to the rooted Tutte polynomial, including a duality relation in the case that all roots reside around a single face of a planar graph. The connection with the Potts model is also reviewed.Comment: plain latex, 14 pages, 2 figs., to appear in Annales de l'Institut Fourier (1999

Surface Contribution to Raman Scattering from Layered Superconductors

Generalizing recent work, the Raman scattering intensity from a semi-infinite superconducting superlattice is calculated taking into account the surface contribution to the density response functions. Our work makes use of the formalism of Jain and Allen developed for normal superlattices. The surface contributions are shown to strongly modify the bulk contribution to the Raman-spectrum line shape below $2\Delta$, and also may give rise to additional surface plasmon modes above $2\Delta$. The interplay between the bulk and surface contribution is strongly dependent on the momentum transfer $q_\parallel$ parallel to layers. However, we argue that the scattering cross-section for the out-of-phase phase modes (which arise from interlayer Cooper pair tunneling) will not be affected and thus should be the only structure exhibited in the Raman spectrum below $2\Delta$ for relatively large $q_\parallel\sim 0.1\Delta/v_F$. The intensity is small but perhaps observable.Comment: 14 pages, RevTex, 6 figure

Temperature-dependent gap equations and their solutions in the SU(4) model of high-temperature superconductivity

Temperature-dependent gap equations in the SU(4) model of high-Tc superconductivity are derived and analytical solutions are obtained. Based on these solutions, a generic gap diagram describing the features of energy gaps as functions of doping P is presented and a phase diagram illustrating the phase structure as a function of temperature T and doping P is sketched. A special doping point P_q occurs naturally in the solutions that separates two phases at temperature T = 0: a pure superconducting phase on one side (P > P_q) and a phase with superconductivity strongly suppressed by antiferromagnetism on the other (P < P_q). We interpret P_q as a quantum phase transition point. Moreover, the pairing gap is found to have two solutions for P < P_q: a small gap that is associated with competition between superconductivity and antiferromagnetism and is responsible for the ground state superconductivity, and a large gap without antiferromagnetic suppression that corresponds to a collective excited state. A pseudogap appears in the solutions that terminates at P_q and originates from the competition between d-wave superconductivity and antiferromagnetism. Nevertheless, this conclusion does not contradict the preformed pair picture conceptually if the preformed pairs are generally defined as any pairs formed before pairing condensation.Comment: 23 pages, 5 color figure

The effect of clouds on the earth's radiation balance

The effect of global cloudiness on the radiation balance at the top of the atmosphere is studied in general circulation model experiments. Wintertime simulations were conducted with clouds that had realistic optical properties, and were compared with simulations in which the clouds were transparent to either solar or thermal radiation. Clouds increase the net balance by limiting longwave loss to space, but decrease it by reflecting solar radiation. It is found that the net result of cloudiness is to maintain net radiation which is less than would be realized under clear conditions: Clouds cause the net radiation at the top of the atmosphere to increase due to longwave absorption, but to decrease even more due to cloud reflectance of solar radiation

Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has been shown to exhibit a promising value for electrical conductivity. Graphene would thus appear to alleviate some of the drawbacks associated with silicon-based transistors. It is for this reason why such a material is considered one of the most prominent candidates to replace silicon within nano-scale transistors. The major crux here, is that graphene is intrinsically gapless, and yet, transistors require a band-gap pertaining to a well-defined ON/OFF logical state. Therefore, exactly as to how one would create this band-gap in graphene allotropes is an intensive area of growing research. Existing methods include nano-ribbons, bilayer and multi-layer structures, carbon nanotubes, as well as the usage of the graphene substrates. Graphene transistors can generally be classified according to two working principles. The first is that a single graphene layer, nanoribbon or carbon nanotube can act as a transistor channel, with current being transported along the horizontal axis. The second mechanism is regarded as tunneling, whether this be band-to-band on a single graphene layer, or vertically between adjacent graphene layers. The high-frequency graphene amplifier is another talking point in recent research, since it does not require a clear ON/OFF state, as with logical electronics. This paper reviews both the physical properties and manufacturing methodologies of graphene, as well as graphene-based electronic devices, transistors, and high-frequency amplifiers from past to present studies. Finally, we provide possible perspectives with regards to future developments.Comment: This is an updated version of our review article, due to be published in Contemporary Physics (Sept 2013). Included are updated references, along with a few minor corrections. (45 pages, 19 figures