An access alternative for mobile satellite networks

Conceptually, this paper discusses strategies of digital satellite communication networks for a very large number of low density traffic stations. These stations can be either aeronautical, land mobile, or maritime. The techniques can be applied to international, domestic, regional, and special purpose satellite networks. The applications can be commercial, scientific, military, emergency, navigational or educational. The key strategy is the use of a non-orthogonal access method, which tolerates overlapping signals. With n being either time or frequency partitions, and with a single overlapping signal allowed, a low cost mobile satellite system can be designed with n squared (n squared + n + 1) number of terminals

Electron spin relaxation in bilayer graphene

Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the parameters obtained by fitting to the numerical calculation according to the latest report by Konschuh {\it et al.} [Phys. Rev. B {\bf 85}, 115423 (2012)] from first principles. In contrast to single-layer graphene, the leading term of the out-of-plane component of the spin-orbit coupling in bilayer graphene shows a Zeeman-like term with opposite effective magnetic fields in the two valleys. This Zeeman-like term opens a spin relaxation channel in the presence of intervalley scattering. It is shown that the intervalley electron-phonon scattering, which has not been reported in the previous literature, strongly suppresses the in-plane spin relaxation time at high temperature whereas the intervalley short-range scattering plays an important role in the in-plane spin relaxation especially at low temperature. A marked nonmonotonic dependence of the in-plane spin relaxation time on temperature with a minimum of several hundred picoseconds is predicted in the absence of the short-range scatterers. This minimum is comparable to the experimental data. Moreover, a peak in the electron density dependence of the in-plane spin relaxation time at low temperature, which is very different from the one in semiconductors, is predicted. We also find a rapid decrease in the in-plane spin relaxation time with increasing initial spin polarization at low temperature, which is opposite to the situation in both semiconductors and single-layer graphene. ......(The remaining is cut due to the limit of space)Comment: 15 pages, 9 figures, PRB in pres

International communications satellite systems

Ten satellite systems for international communication are briefly described. Modulation and coding schemes on some of these systems are highlighted

Performance of random multiple access transmission system

The performance of the Random Multiple Access (RMA) technique, applied to a direct terminal-to-terminal link with a large number of potential users, is determined. The average signal-to-noise ratio (SNR) is derived. Under Gaussian assumption, the approximation of the probability of error is given. The analysis shows that the system performance is affected by the sequence length, the number of simultaneous users, and the number of cochannel symbols, but is not sensitive to the thermal noise. The performance of using very small aperture antenna for both transmitting and receiving without a hub station is given

Electron spin diffusion in monolayer MoS2_2

Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this material, has a marked effect on the in-plane spin diffusion due to the anisotropic spin precession frequency in the spatial domain. With the electron-impurity and inter-valley electron-phonon scatterings separately included in the scattering term, we study the intra- and inter-valley diffusion processes of the in-plane spins by analytically solving the kinetic spin Bloch equations. The intra-valley process is found to be dominant in the in-plane spin diffusion, in contrast to the case of spin relaxation in time domain, where the inter-valley process can be comparable to or even more important than the intra-valley one. For the intra-valley process, we find that the in-plane spin diffusion is suppressed with the increase of impurity density but effectively enhanced by increasing electron density in both the degenerate and nondegenerate limits. We also take into account the electron-electron Coulomb scattering in the intra-valley process. Interestingly, we find that in the nondegenerate limit, the intra-valley spin diffusion length presents an opposite trend in the electron density dependence compared to the one with only electron-impurity scattering.Comment: 6 pages, 1 figur

Topological superconductor with a large Chern number and a large bulk excitation gap in single layer graphene

We show that a two-dimensional topological superconductor (TSC) can be realized in a hybrid system with a conventional $s$-wave superconductor proximity-coupled to a quantum anomalous Hall (QAH) state from the Rashba and exchange effects in single layer graphene. With very low or even zero doping near the Dirac points, i.e., two inequivalent valleys, this TSC has a Chern number as large as four, which supports four Majorana edge modes. More importantly, we show that this TSC has a robust topologically nontrivial bulk excitation gap, which can be larger or even one order of magnitude larger than the proximity-induced superconducting gap. This unique property paves a way for the application of QAH insulators as seed materials to realize robust TSCs and Majorana modes.Comment: 10 pages, 5 figures, PRB in pres

Unique Electron Spin Relaxation Induced by Confined Phonons in Nanowire-Based Quantum Dots

Electron spin relaxation in nanowire-based quantum dots induced by confined phonons is investigated theoretically. Due to the one-dimensional nature of the confined phonons, the van Hove singularities of the confined phonons and the zero of the form factor of the electron-phonon coupling can lead to unique features of the spin relaxation rate. Extremely strong spin relaxation can be obtained at the van Hove singularity. Meanwhile the spin relaxation rate can also be greatly suppressed at the zero of the form factor. This unique feature indicates the flexibility of nanowire-based quantum dots in the manipulation of spin states. It also offers a way to probe the property of the confined phonons.Comment: 4 pages, 2 figure