30,709 research outputs found

    Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures

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    Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 85, 790 (1999) and may be found at

    STRAIN AND INTERDIFFUSION IN SEMICONDUCTOR HETEROSTRUCTURES

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    Copyright 1994 by the American Physical Society. Article is available at

    Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination

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    Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 88, 781 (2000) and may be found at

    1.54 mu m electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes

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    Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 75, 1380 (1999) and may be found at

    Erbium (III) tris(8-hydroxyquinoline) (ErQ): A potential material for silicon compatible 1.5 mu m emitters

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    Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 74, 798 (1999) and may be found at

    The stability analysis of systems with nonlinear feedback expressed by a quadratic program

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    Concentration dependence of the up- and down-conversion emission colours of Er3+-doped Y2O3: a time-resolved spectroscopy analysis

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    Er3+ energy transfer mechanisms and their influence on the dynamics and emission colours are considered for upconversion and downconversion regimes.</jats:p

    Interdiffusion in InGaAs/GaAs: The effect of growth conditions

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    Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 84, 232 (1998) and may be found at
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