1,020 research outputs found

    Intergenerational interactions in human capital accumulation

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    We analyze an economy populated by a sequence of generations who decide over their consumption and investment in human capital of their immediate descendants. The objective of the paper is twofold: firstly, to identify the impact of strategic interactions between consecutive generations on the time path of human capital accumulation. To this end, we characterize the Markov perfect equilibrium (MPE) in such an economy and derive the sufficient conditions for its existence and uniqueness. We then benchmark our results against an optimal but time-inconsistent policy which abstracts from strategic interactions between generations. We prove analytically that human capital accumulation is unambiguously lower in the “strategic” case than in the optimal, “non-strategic” case. The second objective of the current paper is to work out a functional parametrization of the model, suitable for obtaining clear-cut results on the monotonicity of the (unique) Markov perfect equilibrium policy and the optimal policy. We then carry out a sensitivity analysis under this parametrization, thereby assessing quantitatively the magnitude of discrepancies between human capital accumulation paths whether strategic interactions between consecutive generations are taken into account or not.human capital, intergenerational interactions, Markov perfect equilibrium, stochastic transition, constructive approach

    Permanent Income and the Black-White Test Score Gap

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    Analysts often examine the black-white test score gap conditional on family income. Typically only a current income measure is available. We argue that the gap conditional on permanent income is of greater interest, and we describe a method for identifying this gap using an auxiliary data set to estimate the relationship between current and permanent income. Current income explains only about half as much of the black-white test score gap as does permanent income, and the remaining gap in math achievement among families with the same permanent income is only 0.2 to 0.3 standard deviations in two commonly used data sets. When we add permanent income to the controls used by Fryer and Levitt (2006), the unexplained gap in 3rd grade shrinks below 0.15 standard deviations, less than half of what is found with their controls.

    Automatic CAD-model Repair: Shell-Closure

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    Shell-closure is critical to the repair of CAD-models described in the .STL file-format, the de facto solid freeform fabrication industry-standard. Polyhedral CAD-models that do not exhibit shell-closure, i.e. have cracks, holes, or gaps, do not constitute valid solids and frequently cause problems during fabrication. This paper describes a solution for achieving shell-closure of polyhedral CAD-models. The solution accommodates nonmanifold conditions, and guarantees orientable shells. There are several topologically ambiguous situations that might arise during the shell-closure process, and the solution applies intuitively pleasing heuristics in these cases.Mechanical Engineerin

    Gap formation in helical edge states with magnetic impurities

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    Helical edge states appear at the surface of two dimensional topological insulators and are characterized by spin up traveling in one direction and the spin down traveling in the opposite direction. Such states are protected by time reversal symmetry and no backscattering due to scalar impurities can occur. However, magnetic impurities break time reversal symmetry and lead to backscattering. Often their presence is unintentional, but in some cases they are introduced into the sample to open up gaps in the spectrum. We investigate the influence of random impurities on helical edge states, specifically how the gap behaves in the realistic case of impurities having both a magnetic and a scalar component. It turns out that for a fixed magnetic contribution the gap closes when either the scalar component, or Fermi velocity is increased. We compare diagrammatic techniques in the self-consistent Born approximation to numerical calculations which yields good agreement. For experimentally relevant parameters we find that even moderate scalar components can be quite detrimental for the gap formation.Comment: 6 pages, 6 figure

    From Copper Zinc Tin Sulfur to Perovskites: Fabrication and Characterization of New Generation of Solar Cells

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    In 2013, the worldwide production of renewable electricity accounted for 22.1% of the total energy production with 0.9% coming from solar photovoltaics (PVs). Recently, there has been a growing interest for Cu2ZnSnS4 (CZTS) quaternary semiconductor due to the abundance and low cost of its precursors. Moreover, this chalcopyrite material has an ideal direct band gap around 1.5 eV, high absorption coefficient (α \u3e104 cm-1) and high conductivity, making it suitable for nanostructured and dye-sensitized solar cell (DSSC) applications. Here, CZTS nanoparticles have been synthesized by pulsed laser deposition (PLD) and simultaneously deposited in the interstitial space of ZnO nanowire arrays to form bulk heterojunction 3D nanostructured solar cells. Secondly, vertically oriented CZTS nanoplates have been synthesized by PLD and used as counter electrode in platinum-free dye-sensitized solar cells. These CZTS nanostructures proved to be suitable in achieving workable solar cells, which could significantly cut down the cell cost and provide environmentally friendly photovoltaic devices. Alternately, hybrid organic–inorganic perovskite solar cells have become one of the most attractive photovoltaic technologies with easy solution fabrication and high conversion efficiencies. However, the devices remain unstable under certain processing and environmental conditions. Herein, formamidinium lead tri-halide perovskite (FAPbI3) planar heterojunction solar cells have been fabricated under a controlled environment. The fabrication parameters (precursor concentration, annealing, etc) and the effect of humidity on the structural, optical, and electrical properties of FAPbI3 thin films and devices have been investigated and proved to be critical in the processing of efficient devices. Solar cells with conversion efficiency of 16.6% have been obtained. Furthermore, in-situ techniques such as in-situ (scanning) transmission electron microscopy and in-situ XRD were performed to understand the crystallization and degradation mechanisms of FAPbI3 thin films.The in-situ data were correlated with planar heterojunction FAPbI3 devices efficiency data in order to improve the device fabrication process

    From Copper Zinc Tin Sulfur to Perovskites: Fabrication and Characterization of New Generation of Solar Cells

    Get PDF
    In 2013, the worldwide production of renewable electricity accounted for 22.1% of the total energy production with 0.9% coming from solar photovoltaics (PVs). Recently, there has been a growing interest for Cu2ZnSnS4 (CZTS) quaternary semiconductor due to the abundance and low cost of its precursors. Moreover, this chalcopyrite material has an ideal direct band gap around 1.5 eV, high absorption coefficient (α \u3e104 cm-1) and high conductivity, making it suitable for nanostructured and dye-sensitized solar cell (DSSC) applications. Here, CZTS nanoparticles have been synthesized by pulsed laser deposition (PLD) and simultaneously deposited in the interstitial space of ZnO nanowire arrays to form bulk heterojunction 3D nanostructured solar cells. Secondly, vertically oriented CZTS nanoplates have been synthesized by PLD and used as counter electrode in platinum-free dye-sensitized solar cells. These CZTS nanostructures proved to be suitable in achieving workable solar cells, which could significantly cut down the cell cost and provide environmentally friendly photovoltaic devices. Alternately, hybrid organic–inorganic perovskite solar cells have become one of the most attractive photovoltaic technologies with easy solution fabrication and high conversion efficiencies. However, the devices remain unstable under certain processing and environmental conditions. Herein, formamidinium lead tri-halide perovskite (FAPbI3) planar heterojunction solar cells have been fabricated under a controlled environment. The fabrication parameters (precursor concentration, annealing, etc) and the effect of humidity on the structural, optical, and electrical properties of FAPbI3 thin films and devices have been investigated and proved to be critical in the processing of efficient devices. Solar cells with conversion efficiency of 16.6% have been obtained. Furthermore, in-situ techniques such as in-situ (scanning) transmission electron microscopy and in-situ XRD were performed to understand the crystallization and degradation mechanisms of FAPbI3 thin films.The in-situ data were correlated with planar heterojunction FAPbI3 devices efficiency data in order to improve the device fabrication process

    Elliptic curve cryptography: Generation and validation of domain parameters in binary Galois Fields

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    Elliptic curve cryptography (ECC) is an increasingly popular method for securing many forms of data and communication via public key encryption. The algorithm utilizes key parameters, referred to as the domain parameters. These parameters must adhere to specific characteristics in order to be valid for use in the algorithm. The American National Standards Institute (ANSI), in ANSI X9.62, provides the process for generating and validating these parameters. The National Institute of Standards and Technology (NIST) has identified fifteen sets of parameters; five for prime fields, five for binary fields, and five for Koblitz curves. The parameter generation and validation processes have several key issues. The first is the fast reduction within the proper modulus. The modulus chosen is an irreducible polynomial having degree greater than 160. Choosing irreducible polynomials of a particular order is less critical since they have isomorphic properties, mathematically. However, since there are differences in performance, there are standards that determine the specific polynomials chosen. The NIST standards are also based on word lengths of 32 bits. Processor architecture, primality, and validation of irreducibility are other important characteristics. The area of ECC that is researched is the generation and validation processes, as they are specified for binary Galois Fields F (2m). The rationale for the parameters, as computed for 32 bit and 64 bit computer architectures, and the algorithms used for implementation, as specified by ANSI, NIST and others, are examined. The methods for fast reduction are also examined as a baseline for understanding these parameters. Another aspect of the research is to determine a set of parameters beyond the 571-bit length that meet the necessary criteria as determined by the standards
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