Towards device-size atomistic models of amorphous silicon

The atomic structure of amorphous materials is believed to be well described by the continuous random network model. We present an algorithm for the generation of large, high-quality continuous random networks. The algorithm is a variation of the "sillium" approach introduced by Wooten, Winer, and Weaire. By employing local relaxation techniques, local atomic rearrangements can be tried that scale almost independently of system size. This scaling property of the algorithm paves the way for the generation of realistic device-size atomic networks.Comment: 7 pages, 3 figure

Large well-relaxed models of vitreous silica, coordination numbers and entropy

A Monte Carlo method is presented for the simulation of vitreous silica. Well-relaxed networks of vitreous silica are generated containing up to 300,000 atoms. The resulting networks, quenched under the BKS potential, display smaller bond-angle variations and lower defect concentrations, as compared to networks generated with molecular dynamics. The total correlation functions T(r) of our networks are in excellent agreement with neutron scattering data, provided that thermal effects and the maximum inverse wavelength used in the experiment are included in the comparison. A procedure commonly used in experiments to obtain coordination numbers from scattering data is to fit peaks in rT(r) with a gaussian. We show that this procedure can easily produce incorrect results. Finally, we estimate the configurational entropy of vitreous silica.Comment: 7 pages, 4 figures (two column version to save paper

Reverse Monte Carlo modeling of amorphous silicon

An implementation of the Reverse Monte Carlo algorithm is presented for the study of amorphous tetrahedral semiconductors. By taking into account a number of constraints that describe the tetrahedral bonding geometry along with the radial distribution function, we construct a model of amorphous silicon using the reverse monte carlo technique. Starting from a completely random configuration, we generate a model of amorphous silicon containing 500 atoms closely reproducing the experimental static structure factor and bond angle distribution and in improved agreement with electronic properties. Comparison is made to existing Reverse Monte Carlo models, and the importance of suitable constraints beside experimental data is stressed.Comment: 6 pages, 4 PostScript figure