16 research outputs found
Aptamer-functionalized Si-nanonet electrolyte-gate field-effect transistor (EGT) for detection of SARS-CoV-2 virus
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Influence of O2 plasma on surface functionalization and electrical characteristics for FET-based Biosensor applications
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Parylene-H ๋ฐ๋ง์ ์ ์ฐ๋ง์ผ๋ก ์ด์ฉํ ์ค๋ฆฌ์ฝ ๋ฐ์ด์ค์ผ์์ DC ํน์ฑ ๋ฐ ์ ๋ขฐ์ฑ ๋ถ์
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Atypical presentation of complex regional pain syndrome: neuropathic itching - A case report -
Background In some patients with neuropathic pain (NP), such as complex regional pain syndrome (CRPS), itching rather than pain is the main symptom making diagnosis and treatment difficult. Case We report a case of a 23-year-old male with a history of hypoxic brain damage who presented with pruritus of the left foot and ankle. His left foot was fractured, and he underwent surgery 6 months previously. After the operation and cast application, he developed uncontrolled pruritus, swelling, sweating, and flushing of the left foot skin with limping. On examination, he showed well-known features of CRPS without pain. He was diagnosed with an atypical CRPS with neuropathic itching (NI). With treatment modalities used for NP and CRPS, his pruritus subsided gradually, and the his ankle mobility improved. Conclusions Unexplained itching can be the main symptom in some CRPS patients. Treatment according to NP can improve symptoms of NI in CRPS patients
Improved Long-Term Responses of Au-Decorated Si Nanowire FET Sensor for NH3 Detection
Au nanoparticle (AuNP)-decorated silicon nanowire (SiNW) field-effect transistors (FETs) were made using a top-down technique to enhance the sensing responses and long-term reliability for the detection of ammonia (NH3). The as-fabricated, diluted hydrofluoric acid (dHF)-treated, and AuNP-decorated SiNW FETs were prepared and characterized at room temperature. These SiNW FETs show better sensitivity and low power consumption in the subthreshold regime than in the linear regime. To evaluate the long-term responses, devices were operated over a period of 120 days. The dHF-treated SiNW FET showed a significant degradation in sensitivity as a function of time, even though it showed the highest sensitivities in the initial stage. The SiNW with AuNPs showed the lowest long-term variation of sensitivity with sufficient linearity. The SiNW with AuNPs showed the lowest drift as low as -0.067%/day for current sensitivity and -0.024%/day for voltage sensitivity, respectively. These results suggest that the deposition of AuNPs on SiNW is very useful for improving the long-term variation in chemical sensing applications.11Nsciescopu