Influence of gold-silica nanoparticles on the performance of small-molecule bulk heterojunction solar cells

Light trapping by gold (Au)-silica nanospheres and nanorods embedded in the active layer of small-molecule (SM) organic solar cell has been systematically compared. Nanorod significantly outperforms nanosphere because of more light scattering and higher quality factor for localized surface plasmon resonance (LSPR) triggered by nanorods. The optimum concentration of nanorod was characterized by charge carrier transport and morphology of the active layers. At optimum nanorod concentration, almost no change in the morphology of the active layer reveals that LSPR and scattering effects rather than the morphology are mainly responsible for the enhanced power conversion efficiency. In addition, the preliminary lifetime studies of the SM solar cells with and without Au-silica nanorods were conducted by measuring the current density-voltage characteristics over 20 days. The results show that plasmonic device with nanorods has no adverse impact on the device stability ©2015 Elsevier B.V. All rights reserved

Clinical decision making in nursing

SIGLEAvailable from British Library Document Supply Centre- DSC:DX188605 / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering

10.1088/0268-1242/22/11/009Semiconductor Science and Technology22111232-1239SSTE

Nano-scale morphology and electron spectrum of defect states in low-k SiOCH films

Results of experimental investigations on the relationship between nanoscale morphology of carbon doped hydrogenated silicon-oxide (SiOCH) low-k films and their electron spectrum of defect states are presented. The SiOCH films have been deposited using trimethylsilane (3MS) - oxygen mixture in a 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) system at variable RF power densities (from 1.3 to 2.6 W/cm2) and gas pressures of 3, 4, and 5 Torr. The atomic structure of the SiOCH films is a mixture of amorphous-nanocrystalline SiO2-like and SiC-like phases. Results of the FTIR spectroscopy and atomic force microscopy suggest that the volume fraction of the SiC-like phase increases from ∼0.2 to 0.4 with RF power. The average size of the nanoscale surface morphology elements of the SiO2-like matrix can be controlled by the RF power density and source gas flow rates. Electron density of the defect states N(E) of the SiOCH films has been investigated with the DLTS technique in the energy range up to 0.6 eV from the bottom of the conduction band. Distinct N(E) peaks at 0.25 - 0.35 eV and 0.42 - 0.52 eV below the conduction band bottom have been observed. The first N(E) peak is identified as originated from E1-like centers in the SiC-like phase. The volume density of the defects can vary from 1011 - 1017 cm-3 depending on specific conditions of the PECVD process

Characterization and modeling of CMOS on-chip coupled interconnects

10.1109/ESSDERC.2007.4430903ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference159-16

SiC-like phase and room-temperature photoluminescence of low-k SiOCH films

Carbon-doped hydrogenated silicon oxide (SiOCH) low-k films have been prepared using 13.56 MHz discharge in trimethylsilane (3MS) - oxygen gas mixtures at 3, 4, and 5 Torr sustained with RF power densities 1.3 - 2.6 W/cm2. The atomic structure of the SiOCH films appears to be a mixture the amorphous SiO2-like and the partially polycrystalline SiC-like phases. Results of the infra-red spectroscopy reflect the increment in the volume fraction of the SiC-like phase from 0.22 - 0.28 to 0.36 - 0.39 as the RF power increment. Steady-state near-UV laser-excited (364 nm wavelength, 40±2 mW) photoluminescence (PL) has been studied at room temperatures in the visible (1.8 eV - 3.1 eV) subrange of photon spectrum. Two main bands of the PL signal (at the photon energies of 2.5 - 2.6 eV and 2.8 - 2.9 eV) are observed. Intensities of the both bands are changed monotonically with RF power, whereas the bandwidth of ∼0.1 eV remains almost invariable. It is likely that the above lines are dumped by the non-radiative recombination involving E1-like centres in the amorphous-nanocrystalline SiC-like phases. Such explanation of the PL intensity dependences on the RF power density is supported by results of experimental studies of defect states spectrum in bandgap of the SiOCH films

SPICE compatible modelling of on-chip coupled interconnects

10.1049/el:20072620Electronics Letters43241336-1338ELLE

Wideband lumped element model for on-chip interconnects on lossy silicon substrate

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium2006478-48