Suris tetrons: possible spectroscopic evidence for four-particle optical excitations of the 2D electron gas

The excitations of a two-dimensional electron gas in quantum wells with intermediate carrier density (~10^{11} cm^{-2}), i.e., between the exciton-trion- and the Fermi-Sea range, are so far poorly understood. We report on an approach to bridge this gap by a magneto-photoluminescence study of modulation-doped (Cd,Mn)Te quantum well structures. Employing their enhanced spin splitting, we analyzed the characteristic magnetic-field behavior of the individual photoluminescence features. Based on these results and earlier findings by other authors, we present a new approach for understanding the optical transitions at intermediate densities in terms of four-particle excitations, the Suris tetrons, which were up to now only predicted theoretically. All characteristic photoluminescence features are attributed to emission from these quasi-particles when attaining different final states.Comment: 12 pages, 3 figure

The origin of the red luminescence in Mg-doped GaN

Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the combined experiments reveal a strong correlation between the vacancy concentrations and the intensity of the red photoluminescence band at 1.8 eV. The analysis provides strong evidence that the emission is due to recombination in which electrons both from effective mass donors and from deeper donors recombine with deep centers, the deep centers being vacancy-related defects.Comment: 4 pages, 3 figure

Comparison of Zn_{1-x}Mn_xTe/ZnTe multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron beam lithography followed by Ar+ ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructures were then recorded at 10 K and the spectra were fitted to extract the linewidths and the energy positions of the excitonic transitions in each sample. The fitted results are compared to calculations of the transition energies in which the different strain states in the samples are taken into account. We show that the main effect of the nanofabrication process is a change in the strain state of the quantum dot samples compared to the parent heterostructures. The quantum dot pillars turn out to be freestanding, whereas the heterostructures are in a good approximation strained to the ZnTe lattice constant. The lateral size of the dots is such that extra confinement effects are not expected or observed.Comment: 23 pages, LaTeX2e (amsmath, epsfig), 7 EPS figure

Optical energies of AllnN epilayers

Optical energy gaps are measured for high-quality Al1−xInxN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13<x<0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric fiel

Linear polarization of the photoluminescence of quantum wells

The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-plane deformation acting on the valence band states is presented and is verified by comparison with the experimental data. We attempted to identify clues to the microscopic origin of the valence band spin anisotropy and to the mechanisms which actually determine the linear polarization of the PL in the quantum wells subject to the in-plane magnetic field. The conclusions of the present paper apply in full measure to non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain anisotropy.Comment: 21 pages, 10 figure

Photoluminescence and photoluminescence excitation studies of lateral size effects in Zn_{1-x}Mn_xSe/ZnSe quantum disc samples of different radii

Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by an etching procedure which combined dry and wet etching techniques. The quantum disc structures and the parent structure were studied by photoluminescence and photoluminescence excitation spectroscopy. For the light-hole excitons in the quantum well region, shifts of the energy positions are observed following fabrication of the discs, confirming that strain relaxation occurs in the pillars. The light-hole exciton lines also sharpen following disc fabrication: this is due to an interplay between strain effects (related to dislocations) and the lateral size of the discs. A further consequence of the small lateral sizes of the discs is that the intensity of the donor-bound exciton emission from the disc is found to decrease with the disc radius. These size-related effects occur before the disc radius is reduced to dimensions necessary for lateral quantum confinement to occur but will remain important when the discs are made small enough to be considered as quantum dots.Comment: LaTeX2e, 13 pages, 6 figures (epsfig

Binding Energy of Charged Excitons in ZnSe-based Quantum Wells

Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29 A. The binding energies of X+ are about 25% smaller than the binding energy in the same structures. The magnetic field behavior of and X+ binding energies differ qualitatively. With growing magnetic field strength, increases its binding energy by 35-150%, while for X+ it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed

Inversion asymmetry effects in modulation-doped Cd1-xMnxTe quantum wells

We report a striking in-plane anisotropy of the spin-flip Raman signals observed for dilute magnetic Cd1−xMnxTe quantum wells containing a two-dimensional electron gas. The effect depends upon electron concentration, which can be varied within a single sample via secondary above-barrier illumination. The experimental results are described in a simple, single-electron picture by a model of the conduction band Hamiltonian that includes contributions from Dresselhaus, Rashba, and Zeeman terms