Theory of size-dependent resonance Raman intensities in InP nanocrystals

The resonance Raman spectrum of InP nanocrystals is characterized by features ascribable to both longitudinal (LO) and transverse (TO) optical modes. The intensity ratio of these modes exhibits a strong size dependence. To calculate the size dependence of the LO and TO Raman cross sections, we combine existing models of Raman scattering, the size dependence of electronic and vibrational structure, and electron vibration coupling in solids. For nanocrystals with a radius >10 Å, both the LO and TO coupling strengths increase with increasing radius. This, together with an experimentally observed increase in the electronic dephasing rate with decreasing size, allows us to account for the observed ratio of LO/TO Raman intensities

Does trade integration alter monetary policy transmission?

This paper explores the role of trade integration—or openness—for monetary policy transmission in a medium-scale New Keynesian model. Allowing for strategic complementarities in price-setting, we highlight a new dimension of the exchange rate channel by which monetary policy directly impacts domestic inflation. Although the strength of this effect increases with economic openness, it also requires that import prices respond to exchange rate changes. In this case domestic producers find it optimal to adjust their prices to exchange rate changes which alter the domestic currency price of their foreign competitors. We pin down key parameters of the model by matching impulse responses obtained from a vector autoregression on U.S. time series relative to an aggregate of industrialized countries. While we find evidence for strong complementarities, exchange rate pass-through is limited. Openness has therefore little bearing on monetary transmission in the estimated model

Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited.\ud This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.\u

A new comparative approach to macroeconomic modeling and policy analysis

In the aftermath of the global financial crisis, the state of macroeconomic modeling and the use of macroeconomic models in policy analysis has come under heavy criticism. Macroeconomists in academia and policy institutions have been blamed for relying too much on a particular class of macroeconomic models. This paper proposes a comparative approach to macroeconomic policy analysis that is open to competing modeling paradigms. Macroeconomic model comparison projects have helped produce some very influential insights such as the Taylor rule. However, they have been infrequent and costly, because they require the input of many teams of researchers and multiple meetings to obtain a limited set of comparative findings. This paper provides a new approach that enables individual researchers to conduct model comparisons easily, frequently, at low cost and on a large scale. Using this approach a model archive is built that includes many well-known empirically estimated models that may be used for quantitative analysis of monetary and fiscal stabilization policies. A computational platform is created that allows straightforward comparisons of models’ implications. Its application is illustrated by comparing different monetary and fiscal policies across selected models. Researchers can easily include new models in the data base and compare the effects of novel extensions to established benchmarks thereby fostering a comparative instead of insular approach to model development

The fragmented city.

A dissertation submitted to the Faculty of Architecture University of the Witwatersrand in fulfillment of the requirements for the Degree of Masters in Urban Design.Johannesburg, like many other major cities in Third World nations is facing major urban influx, This urban influx is causing extreme pressure on the existing social and economic fabric. This in tum has resulted in fragmentation on a number of different levels - social, political, economic and physical. The spatial organisation of the city appears to be incapable of coping with this fragmentation. The means or method needs to be discovered where the fragmented elements of the city can be reunited and absorbed into the city system. (Abbreviation abstract)Andrew Chakane 201

Low-temperature process steps for realization of non-volatile memory devices

In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the subsequent functional layers (e.g., gate oxide) can be done using CVD and ALD reactors in a cluster tool. We show that a high nanocrystal density (Si-NC), required for a good functionality of the memory device, can be obtained by using disilane (Si2H6) or trisilane (Si3H8, known as Silcore®) as precursors for LPCVD instead of silane, at a deposition temperature of 325 °C. The nanocrystals are encapsulated with an ALD-Al2O3 layer (deposited at 300 °C), which serves as oxidation barrier. The passivation of the realized structure is done with an ALD-TiN layer deposited at 425 °C. In this work, we realized Al/TiN/Al2O3/Si-NC/SiO2/Si(100) multilayer floating-gate structures, where the crystallized amorphous silicon film was for the time being replaced by a mono-crystalline silicon wafer, and the gate oxide was thermally grown instead of a low-temperature PECVD oxide. The structures were characterized in terms of their performance as memory cells. In addition, the feasibility to use laser crystallization for improving the amorphous silicon films (prior to the gate oxide deposition) was explored

Metal contacts to lowly doped Si and ultra thin SOI

We present our investigations on the fabrication of ohmic and Schottky contacts of several metals on lowly doped bulk Si and SOI wafers. Through this paper we evaluate the fabrication of rectifying devices in which no doping is intentionally introduced

Fabrication and characterization of the charge-plasma diode

We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing