Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb

Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.Comment: 4 page

Engineering of spin-lattice relaxation dynamics by digital growth of diluted magnetic semiconductor CdMnTe

The technological concept of "digital alloying" offered by molecular-beam epitaxy is demonstrated to be a very effective tool for tailoring static and dynamic magnetic properties of diluted magnetic semiconductors. Compared to common "disordered alloys" with the same Mn concentration, the spin-lattice relaxation dynamics of magnetic Mn ions has been accelerated by an order of magnitude in (Cd,Mn)Te digital alloys, without any noticeable change in the giant Zeeman spin splitting of excitonic states, i.e. without effect on the static magnetization. The strong sensitivity of the magnetization dynamics to clustering of the Mn ions opens a new degree of freedom for spin engineering.Comment: 9 pages, 3 figure

Measurement of Spin Polarization by Andreev Reflection in Ferromagnetic In1-xMnxSb Epilayers

We carried out Point Contact Andreev Reflection (PCAR) spin spectroscopy measurements on epitaxially-grown ferromagnetic In1-xMnxSb epilayers with a Curie temperature of ~9K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its non-magnetic analog, In1-yBeySb. We found the conductance curves of the Sn point contacts with In1-yBeySb to be fairly conventional, with the possible presence of proximity-induced superconductivity effects at the lowest temperatures. The experimental Z-values of interfacial scattering agreed well with the estimates based on the Fermi velocity mismatch between the semiconductor and the superconductor. These measurements provided control data for subsequent PCAR measurements on ferromagnetic In1-xMnxSb, which indicated spin polarization in In1-xMnxSb to be 52 +- 3%

Incidence of bone formation by whole bone marrow cell suspensions and by its stromal cell cultures injected into kidney parenchyma of Balb/c mice

The evaluation of incidence of bone formation by whole syngeneic bone marrow cell suspension and by bone marrow stromal cell cultured in vitro injection into kidney parenchyma was done. Bone tissue was found in 26 kidneys out of 100 injected with whole bone marrow cells suspension. Cultured stromal bone marrow cells grafted into kidney parenchyma produced ossicles in only 4 out of 101 injected kidneys. Such low incidence of bone forming ability of the marrow stromal cell cultures grafted into kidney indicate their useless for study on bone histogenesis in the kidney by murine marrow stromal cell cultures

Effects of Capping on the (Ga,Mn)As Magnetic Depth Profile

Annealing can increase the Curie temperature and net magnetization in uncapped (Ga,Mn)As films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped (Ga,Mn)As revealed a pronounced magnetization gradient that was reduced after annealing. We have extended this study to (Ga,Mn)As capped with GaAs. We observe no increase in Curie temperature or net magnetization upon annealing. Furthermore, PNR measurements indicate that annealing produces minimal differences in the depth-dependent magnetization, as both as-grown and annealed films feature a significant magnetization gradient. These results suggest that the GaAs cap inhibits redistribution of interstitial Mn impurities during annealing.Comment: 12 pages, 3 figures, submitted to Applied Physics Letter

Fractional quantum Hall effect in CdTe

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.Comment: Submitte

Influence of exciton spin relaxation on the photoluminescence spectra of semimagnetic quantum dots

We present a comprehensive experimental and theoretical studies of photoluminescence of single CdMnTe quantum dots with Mn content x ranging from 0.01 to 0.2. We distinguish three stages of the equilibration of the exciton-Mn ion spin system and show that the intermediate stage, in which the exciton spin is relaxed, while the total equilibrium is not attained, gives rise to a specific asymmetric shape of the photoluminescence spectrum. From an excellent agreement between the measured and calculated spectra we are able to evaluate the exciton localization volume, number of paramagnetic Mn ions, and their temperature for each particular dot. We discuss the values of these parameters and compare them with results of other experiments. Furthermore, we analyze the dependence of average Zeeman shifts and transition linewidths on the Mn content and point out specific processes, which control these values at particular Mn concentrations.Comment: submitted to Phys. Rev.