1 research outputs found
Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
The continued scaling in transistors
and memory elements has necessitated the development of atomic layer
deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically
insulating films for sidewall spacer processing. Silicon nitride (SiN)
has been the prototypical material for this need and extensive work
has been conducted into realizing sufficiently lower wet etch rates
(WERs) as well as leakage currents to meet industry needs. In this
work, we report on the development of plasma-enhanced atomic layer
deposition (PEALD) composites of SiN and AlN to minimize WER and leakage
current density. In particular, the role of aluminum and the optimum
amount of Al contained in the composite structures have been explored.
Films with near zero WER in dilute HF and leakage currents density
similar to pure PEALD SiN films could be simultaneously realized through
composites which incorporate ≥13 at. % Al, with a maximum thermal
budget of 350 °C